Semiconductor Laser LNC704PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. Stable single horizontal mode oscillation LD 110˚±1˚ 0.4±0.1 Features Low threshold current PD 1 Junction plane 3 Reference plane 2.3±0.2 1.27±0.07 0.25 1.0±0.1 Reference slot Reference plane 1.2±0.1 Long lifetime, high reliability Applications Optical data processing devices 3-ø0.45 6.5±0.5 Optical disk memory Optical measuring equipment 2 1 3 1: LD Anode 2: Common Case 3: PD Cathode ø2.0 Bottom view Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Symbol Ratings Unit PO 40 mW Laser VR 2 V PIN VR (PIN) 30 V Pd (PIN) 100 mW Power dissipation Operating ambient temperature Topr –10 to +60 ˚C Storage temperature Tstg – 40 to +80 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Threshold current Ith CW 10 20 35 mA Operating current IOP CW PO = 32mW 30 70 90 mA Operating voltage VOP CW PO = 32mW 2.0 2.5 V λL CW PO = 32mW 770 785 805 nm Horizontal direction θ//*1 CW PO = 32mW 7 9 13 deg. Vertical direction θ⊥*1 CW PO = 32mW 20 25 30 deg. 0.7 0.9 1.2 W/A Oscillation wavelength Radiation angle Differential efficiency η CW PO = 29mW/I(32mW – 3mW) PIN photo current IP CW PO = 32mW, VR (PIN) = 5V *1 The mA IR VR (PIN) = 15V 0.1 µA X direction θX CW PO = 32mW –2.0 +2.0 deg. Y direction θY CW PO = 32mW –3.0 +3.0 deg. Reverse current (DC) Optical axis accuracy 0.4 radiation angle is indicated as half full angle. 1 Semiconductor Laser LNC704PS PO — IOP I—V 60 Far field pattern 200 100 Ta = 25˚C Relative radiant power ∆PO 100 I (mA) 40 30 0 Current Radiant power PO (mW) 50 20 –100 10 0 0 40 80 –200 –4 120 –2 0 2 80 60 20 20 Ith — Ta 10 3 VR (PIN) = 5V PO = 32mW 10 30 50 10 2 10 – 10 70 PIN photo current IP (µA) IOP (mA) Operating current Ith (mA) Threshold current 1 – 10 Ambient temperature Ta (˚C ) 10 30 50 70 Ambient temperature Ta (˚C ) PO — Ta Id — Ta VR (PIN) = 15V 10 PIN dark current Id (nA) Radiant power PO (mW) 50 40 30 20 0 – 10 10 30 50 70 Ambient temperature Ta (˚C ) 2 1 10 –1 10 –2 10 10 –3 – 10 10 30 50 Ambient temperature Ta (˚C ) 500 400 300 200 –10 10 30 50 Ambient temperature Ta (˚C ) 10 2 60 40 600 PO = 32mW 10 20 IP — Ta IOP — Ta 10 2 0 Angle θ (deg.) Voltage V (V) Operating current IOP (mA) θ⊥ 40 0 40 4 θ// 70 70