Data Sheet

PMDPB28UN
20 V, dual N-channel Trench MOSFET
Rev. 1 — 26 April 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
 Exposed drain pad for excellent
thermal conduction
1.3 Applications
 Charging switch for portable devices
 DC-to-DC converters
 Small brushless DC motor drive
 Power management in battery-driven
portables
 Hard disc and computing power
management
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-8
-
8
V
-
-
5.8
A
-
30
37
mΩ
Per transistor
drain current
ID
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics (per transistor)
RDSon
[1]
drain-source on-state
resistance
VGS = 4.5 V; ID = 4.6 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
S1
source TR1
2
G1
gate TR1
3
D2
drain TR2
4
S2
source TR2
5
G2
gate TR2
6
D1
drain TR1
Simplified outline
6
5
7
1
Graphic symbol
D1
4
D2
8
2
3
7
D1
drain TR1
Transparent top view
8
D2
drain TR2
SOT1118 (DFN2020-6)
G1 S1
S2 G2
017aaa254
3. Ordering information
Table 3.
Ordering information
Type number
PMDPB28UN
Package
Name
Description
Version
DFN2020-6
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
SOT1118
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMDPB28UN
1P
PMDPB28UN
Product data sheet
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© NXP B.V. 2012. All rights reserved.
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
ID
drain current
Per transistor
-8
8
V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
5.8
A
VGS = 4.5 V; Tamb = 25 °C
[1]
-
4.6
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
2.9
A
-
18.4
A
[2]
-
510
mW
[1]
-
1200
mW
-
8330
mW
-
0.8
A
-55
150
°C
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Source-drain diode
source current
IS
[1]
Tamb = 25 °C
Per device
Tj
junction temperature
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
Fig 1.
017aaa124
120
−25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMDPB28UN
Product data sheet
0
−75
175
Fig 2.
−25
25
75
125
175
Tj (°C)
Normalized continuous drain current as a
function of junction temperature
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
017aaa515
102
Limit RDSon = VDS/ID
ID
(A)
10
(1)
(2)
1
(3)
(4)
(5)
10-1
(6)
10-2
10-1
1
10
102
VDS (V)
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) DC; Tsp = 25 °C
(4) tp = 10 ms
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
Min
Typ
Max
Unit
[1]
-
212
245
K/W
[2]
-
90
105
K/W
[3]
-
56
65
K/W
-
11
15
K/W
Per transistor
Rth(j-a)
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
PMDPB28UN
Product data sheet
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Rev. 1 — 26 April 2012
© NXP B.V. 2012. All rights reserved.
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
017aaa516
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0
0.01
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa517
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0
1
10-3
0.02
0.01
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, mounting pad for drain 6 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB28UN
Product data sheet
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Rev. 1 — 26 April 2012
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.4
0.7
1
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 20 V; VGS = 0 V; Tj = 150 °C
-
-
30
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 4.5 V; ID = 4.6 A; Tj = 25 °C
-
30
37
mΩ
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
VGS = 4.5 V; ID = 4.6 A; Tj = 150 °C
-
46
57
mΩ
VGS = 2.5 V; ID = 4 A; Tj = 25 °C
-
39
51
mΩ
VGS = 1.8 V; ID = 1 A; Tj = 25 °C
-
56
83
mΩ
VDS = 10 V; ID = 3.6 A; Tj = 25 °C
-
14.5
-
S
-
3.1
4.7
nC
-
0.35
-
nC
-
0.87
-
nC
-
265
-
pF
-
76
-
pF
-
41
-
pF
-
6
-
ns
-
15
-
ns
Dynamic characteristics (per transistor)
QG(tot)
total gate charge
VDS = 10 V; ID = 4.6 A; VGS = 4.5 V;
Tj = 25 °C
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
13
-
ns
tf
fall time
-
9
-
ns
-
0.8
1.2
V
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 10 V; ID = 4.6 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
Source-drain diode (per transistor)
VSD
source-drain voltage
PMDPB28UN
Product data sheet
IS = 0.8 A; VGS = 0 V; Tj = 25 °C
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
017aaa518
18
2.5 V
ID
(A)
VGS = 2.2 V
ID
(A)
2.1 V
2.0 V
12
017aaa519
10-3
4.5 V
10-4
(1)
(2)
(3)
1.8 V
10-5
6
1.6 V
1.4 V
0
0
1
2
3
VDS (V)
4
10-6
Tj = 25 °C
0
0.35
0.70
1.05
VGS (V)
1.40
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa520
100
1.8 V
1.6 V
RDSon
(mΩ)
1.7 V
2.0 V
1.9 V
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
017aaa521
200
2.2 V
RDSon
(mΩ)
2.1 V
150
75
50
100
2.5 V
4.5 V
25
50
0
0
(1)
(2)
0
6
12
ID (A)
18
Tj = 25 °C
0
2
4
6
VGS (V)
8
ID = 4.6 A
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
PMDPB28UN
Product data sheet
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
017aaa522
18
a
(2)
(1)
017aaa523
1.6
ID
(A)
1.4
12
1.2
1.0
6
0.8
(2)
0
0
(1)
1
2
VGS (V)
3
0.6
-60
0
60
120
Tj (°C)
180
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa524
1.5
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa525
103
C
(pF)
VGS(th)
(V)
(1)
1.0
(1)
102
(2)
(3)
(2)
0.5
10
(3)
0
-60
0
60
120
Tj (°C)
180
1
10-1
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(1) Ciss
(2) typical values
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PMDPB28UN
Product data sheet
10
VDS (V)
102
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
017aaa526
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
017aaa137
0
0
1
2
3
QG (nC)
4
ID = 4.6 A; VDS = 10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa527
3.2
IS
(A)
2.4
1.6
(1)
(2)
0.8
0
0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMDPB28UN
Product data sheet
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Rev. 1 — 26 April 2012
© NXP B.V. 2012. All rights reserved.
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 17. Duty cycle definition
9. Package outline
2.1
1.9
0.65
max
1.1
0.9
2.1
1.9
0.77
0.57
(2×)
0.54
0.44
(2×)
0.04
max
3
4
1
6
0.65
(4×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig 18. Package outline SOT1118 (DFN2020-6)
PMDPB28UN
Product data sheet
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Rev. 1 — 26 April 2012
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20 V, dual N-channel Trench MOSFET
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
solder paste
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
(6×)
0.45
(6×)
0.72
(2×)
0.82
(2×)
sot1118_fr
Fig 19. Reflow soldering footprint for SOT1118 (DFN2020-6)
PMDPB28UN
Product data sheet
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Rev. 1 — 26 April 2012
© NXP B.V. 2012. All rights reserved.
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20 V, dual N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMDPB28UN v.1
20120426
Product data sheet
-
-
PMDPB28UN
Product data sheet
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Rev. 1 — 26 April 2012
© NXP B.V. 2012. All rights reserved.
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
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Limited warranty and liability — Information in this document is believed to
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PMDPB28UN
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
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NXP Semiconductors does not accept any liability related to any default,
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
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13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PMDPB28UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 April 2012
© NXP B.V. 2012. All rights reserved.
14 of 15
PMDPB28UN
NXP Semiconductors
20 V, dual N-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information . . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 April 2012
Document identifier: PMDPB28UN