Data Sheet

PMFPB8040XP
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky
combination
21 December 2012
Product data sheet
1. General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench
MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
1.8 V RDSon rated for low-voltage gate drive
Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
Exposed drain pad for excellent thermal conduction
Integrated ultra low VF MEGA Schottky diode
3. Applications
•
•
•
•
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
-
-
-20
V
-12
-
12
V
-
-
-3.7
A
MOSFET transistor
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
IF
forward current
Tsp ≤ 105 °C
-
-
2
A
VR
reverse voltage
Tamb = 25 °C
-
-
30
V
-
80
102
mΩ
[1]
Schottky diode
MOSFET transistor static characteristics
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 1 A; Tj = 25 °C
-
440
520
mV
Schottky diode
VF
forward voltage
[1]
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
A
anode
2
n.c.
not connected
3
D
drain
4
S
source
5
G
gate
6
K
cathode
7
K
cathode
8
D
drain
Simplified outline
6
5
7
1
Graphic symbol
4
G
A
S
8
2
3
Transparent top view
DFN2020-6 (SOT1118)
K
D
aaa-003667
6. Ordering information
Table 3.
Ordering information
Type number
Package
PMFPB8040XP
Name
Description
Version
DFN2020-6
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
SOT1118
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMFPB8040XP
1Y
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tj = 25 °C
-
-20
V
MOSFET transistor
VDS
drain-source voltage
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
Symbol
Parameter
Conditions
VGS
gate-source voltage
ID
drain current
Min
Max
Unit
-12
12
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-3.7
A
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-2.7
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-1.7
A
-
-11
A
[2]
-
485
mW
[1]
-
1100
mW
-
6250
mW
-
-1.1
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Source-drain diode
IS
source current
Tamb = 25 °C
VR
reverse voltage
Tamb = 25 °C
-
30
V
IF
forward current
Tsp ≤ 105 °C
-
2
A
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.25 ; Tamb = 25 °C
-
7
A
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
-
18
A
tp = 8 ms; Tj(init) = 25 °C; half-sine wave [3]
-
25
A
total power dissipation
Tamb = 25 °C
[2]
-
480
mW
[1]
-
1190
mW
-
6250
mW
[1]
Schottky diode
Ptot
Tsp = 25 °C
Per device
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
PMFPB8040XP
Product data sheet
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Calculated from square-wave measurements.
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
0
- 75
175
MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
Fig. 2.
- 25
25
75
-10
Tj (°C)
175
MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
017aaa563
-102
ID
(A)
125
Limit RDSon = VDS/ID
tp = 10 µs
tp = 100 µs
-1
tp = 10 ms
DC; Tsp = 25 °C
-10-1
-10-2
-10-1
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
-1
-10
VDS (V)
-102
IDM = single pulse
Fig. 3.
MOSFET transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
225
260
K/W
[2]
-
99
115
K/W
[2]
-
54
62
K/W
-
16
20
K/W
[1]
-
-
260
K/W
[2]
-
-
105
K/W
-
-
20
K/W
MOSFET transistor
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
in free air
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
Schottky diode
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
in free air
thermal resistance
from junction to solder
point
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa564
103
Zth(j-a)
(K/W)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
duty cycle = 1
102
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.02
0.01
1
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
017aaa565
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
10
0.05
0.02
1 0.01
0
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
10-1
1
102
10
tp (s)
103
2
MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
017aaa088
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.5
0.25
0.1
10
0
1
10- 3
0.75
0.33
0.2
0.05
0.02
0.01
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 6.
Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
017aaa089
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.25
0.2
0.05
0.1
10
0
0.02
0.01
1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for cathode 6 cm
Fig. 7.
1
102
10
103
tp (s)
2
Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MOSFET transistor static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.4
-0.6
-1
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-10
µA
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C
-
80
102
mΩ
VGS = -4.5 V; ID = -2.7 A; Tj = 150 °C
-
116
148
mΩ
VGS = -2.5 V; ID = -2.5 A; Tj = 25 °C
-
95
125
mΩ
VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C
-
120
156
mΩ
VDS = -10 V; ID = -2.7 A; Tj = 25 °C
-
15
-
S
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
transfer conductance
MOSFET transistor dynamic characteristics
QG(tot)
total gate charge
VDS = -10 V; ID = -2.7 A; VGS = -4.5 V;
-
5.7
8.6
nC
QGS
gate-source charge
Tj = 25 °C
-
0.7
-
nC
QGD
gate-drain charge
-
0.96
-
nC
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ciss
input capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
-
550
-
pF
Coss
output capacitance
Tj = 25 °C
-
63
-
pF
Crss
reverse transfer
capacitance
-
53
-
pF
td(on)
turn-on delay time
VDS = -10 V; ID = -2.4 A; VGS = -4.5 V;
-
6
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
14
-
ns
td(off)
turn-off delay time
-
120
-
ns
tf
fall time
-
50
-
ns
MOSFET transistor source-drain diode
VSD
source-drain voltage
IS = -1.1 A; VGS = 0 V; Tj = 25 °C
-
-0.8
-1.2
V
forward voltage
IF = 100 mA; Tj = 25 °C
-
330
390
mV
IF = 500 mA; Tj = 25 °C
-
400
460
mV
IF = 1 A; Tj = 25 °C
-
440
520
mV
VR = 5 V; Tj = 25 °C
-
1
3.5
µA
VR = 5 V; Tj = 125 °C
-
0.33
1.2
mA
VR = 10 V; Tj = 25 °C
-
2
5
µA
VR = 20 V; Tj = 25 °C
-
4
15
µA
VR = 30 V; Tj = 25 °C
-
8
30
µA
VR = 5 V; f = 1 MHz; Tj = 25 °C
-
45
55
pF
Schottky diode
VF
IR
reverse current
Cd
diode capacitance
017aaa531
-10
-10 V
ID
(A)
-4.5 V
-8
017aaa532
-10-3
VGS = -1.8 V
-2 V
ID
(A)
-2.5 V
-1.6 V
min
-6
typ
max
-10-4
-1.5 V
-4
-1.4 V
-2
-1.2 V
-1 V
0
0
-1
-2
-3
VDS (V)
-10-5
-4
Tj = 25 °C
Fig. 8.
Product data sheet
-0.25
-0.50
-0.75
-1.00
VGS (V)
Tj = 25 °C; VDS = -5 V
MOSFET transistor: Output characteristics:
drain current as a function of drain-source
voltage; typical values
PMFPB8040XP
0
Fig. 9.
MOSFET transistor: Subthreshold drain current
as a function of gate-source voltage
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
017aaa533
0.25
RDSon
(Ω)
RDSon
(Ω)
0.20
-1.6 V
0.15
0.3
-1.8 V
0.2
-2.5 V
-4.5 V
0.10
Tj = 25 °C
0.1
0.05
0
017aaa534
0.4
VGS = -1.4 V
-1.3 V
0
-1
-2
-3
ID (A)
0
-4
Tj = 25 °C
Tj = 150 °C
0
-1
-2
-3
VGS (V)
-4
ID = -3 A
Fig. 10. MOSFET transistor: Drain-source on-state
Fig. 11. MOSFET transistor: Drain-source on-state
resistance as a function of drain current; typical
resistance as a function of gate-source voltage;
values
typical values
017aaa535
-10
017aaa536
2.0
ID
(A)
a
-8
1.5
-6
1.0
-4
0.5
-2
0
Tj = 150 °C
0
-0.5
-1.0
Tj = 25 °C
-1.5
0
-60
-2.0
-2.5
VGS (V)
VDS > ID × RDSon
Fig. 12. MOSFET transistor: Transfer characteristics:
drain current as a function of gate-source
voltage; typical values
PMFPB8040XP
Product data sheet
0
60
120
Tj (°C)
180
Fig. 13. MOSFET transistor: Normalized drain-source
on-state resistance as a function of junction
temperature; typical values
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
017aaa537
-2.0
017aaa538
103
VGS(th)
(V)
Ciss
-1.5
C
(pF)
max
102
-1.0
typ
Coss
min
-0.5
Crss
0
-60
0
60
120
Tj (°C)
10
-10-1
180
ID = -0.25 mA; VDS = VGS
-1
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
Fig. 14. MOSFET transistor: Gate-source threshold
voltage as a function of junction temperature
Fig. 15. MOSFET transistor: Input, output and reverse
transfer capacitances as a function of drainsource voltage; typical values
017aaa539
-12
VDS
VGS
(V)
ID
-8
VGS(pl)
VGS(th)
VGS
-4
QGS1
QGS2
QGS
QGD
QG(tot)
017aaa137
0
0
3
6
9
QG (nC)
Fig. 17. MOSFET transistor: Gate charge waveform
definitions
12
ID = -3 A; VDS = -10 V; Tamb = 25 °C
Fig. 16. MOSFET transistor: Gate-source voltage as a
function of gate charge; typical values
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
017aaa540
-4
017aaa090
10
IF
(A)
IS
(A)
1
-3
(1)
(2)
10- 1
-2
(3)
(4)
(5)
10- 2
-1
0
Tj = 150 °C
0
-0.4
Tj = 25 °C
-0.8
10- 3
-1.2
VSD (V)
10- 4
-1.4
VGS = 0 V
0
0.2
0.4
0.6
VF (V)
0.8
(1) Tj = 150 °C
(2) Tj = 125 °C
Fig. 18. MOSFET transistor: Source current as a
function of source-drain voltage; typical values
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
Fig. 19. Schottky diode: Forward current as a function
of forward voltage; typical values
017aaa091
10- 2
IR
(A)
10- 3
017aaa092
250
(1)
Cd
(pF)
(2)
200
10- 4
150
10- 5
(3)
10- 6
100
10- 7
50
10- 8
10- 9
(4)
0
10
20
VR (V)
0
30
(1) Tj = 125 °C
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 °C
(2) Tj = 85 °C
Fig. 21. Schottky diode: Diode capacitance as a
function of reverse voltage; typical values
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig. 20. Schottky diode: Reverse current as a function
of reverse voltage; typical values
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
017aaa093
2.4
(1)
IF(AV)
(A)
1.6
(2)
(3)
0.8
0.0
(4)
0
25
FR4 PCB, mounting pad for cathode 6 cm
Tj = 150 °C
50
75
100
125
150
175
Tamb (°C)
2
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 22. Schottky diode: Average forward current as a function of ambient temperature; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 23. Duty cycle definition
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
12. Package outline
2.1
1.9
0.65
max
1.1
0.9
0.77
0.57
(2×)
2.1
1.9
0.54
0.44
(2×)
0.04
max
3
4
1
6
0.65
(4×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig. 24. Package outline DFN2020-6 (SOT1118)
13. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
solder paste
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
sot1118_fr
Fig. 25. Reflow soldering footprint for DFN2020-6 (SOT1118)
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMFPB8040XP v.1
20121221
Product data sheet
-
-
PMFPB8040XP
Product data sheet
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PMFPB8040XP
NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMFPB8040XP
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMFPB8040XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 7
11
Test information ................................................... 12
12
Package outline ................................................... 13
13
Soldering .............................................................. 13
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 21 December 2012
PMFPB8040XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
16 / 16