RClamp2504P & RClamp3304P RailClamp® 2.5V & 3.3V TVS Arrays PROTECTION PRODUCTS - RailClamp® Description Features Transient protection for high-speed data lines to RailClamp® is a low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). The monolithic design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. Each line has a maximum capacitance of < 0.8pF to ground. The capacitance of each line is well matched for consistant signal balance. This device is optimized for ESD protection of portable electronics. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). The RClampTM2504P and RClampTM3304P are constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage current and capacitance over silicon-avalanche diode processes. They feature a true operating voltage of 2.5 volts and 3.3 volts for superior protection. These devices are in a 6-pin, RoHS/WEEE compliant, SLP1616P6 package measuring 1.6 x 1.6 x 0.58mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPdAu. IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) Array of surge rated diodes with internal TVS Diode Small package saves board space Protects up to four I/O lines Low capacitance (<0.8pF) for high-speed interfaces Minimal insertion loss to 3.0GHz Low operating voltage: 2.5V and 3.3V Low leakage current and clamping voltage Solid-state silicon-avalanche technology Mechanical Characteristics SLP1616P6 package RoHS/WEEE Compliant Nominal Dimensions: 1.6 x 1.6 x 0.58 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking: Marking Code + Date Code Packaging: Tape and Reel Applications Circuit Diagram Multi Media Card (MMC) Interfaces SATA Interfaces SD Card Interfaces SIM Ports MDDI Ports MPPI Ports Pin Configuration 1.6 1 3 1.6 6 1 2 5 6 0.5 0.58 GND SLP1616P6 (Bottom View) Nominal Dimensions in mm Revision 01/15/2008 1 www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20μs) Pp k 80 Watts Peak Pulse Current (tp = 8/20μs) IP P 5 A ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) VESD 20 12 kV TJ -40 to +85 °C TSTG -55 to +150 °C Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25oC) R Clamp2504P Parameter Symbo l Conditions VRWM Pin 3 to GN D Punch-Through Voltage V PT IPT = 2μA 2.7 V Snap -Back Voltage VSB ISB = 50mA 2.0 V Reverse Leakage Current IR VRWM = 2.5V, T=25°C 0.5 μA Clamp ing Voltage VC IPP = 1A, tp = 8/20μs 6.5 V Clamp ing Voltage VC IPP = 5A, tp = 8/20μs 13 V Junction Cap acitance Cj VR = 0V, f = 1MHz Any I/O p in to GN D 0.8 pF Reverse Stand-Off Voltage VR = 0V, f = 1MHz Between I/O p ins © 2008 Semtech Corp. 2 Minimum Typical 0.4 Maximum Units 2.5 V pF www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS R Clamp3304P Parameter Symbo l Conditions VRWM Pin 3 to GN D Punch-Through Voltage V PT IPT = 2μA 3.5 V Snap -Back Voltage VSB ISB = 50mA 2.8 V Reverse Leakage Current IR VRWM = 3.3V, T=25°C 0.5 μA Clamp ing Voltage VC IPP = 1A, tp = 8/20μs Any I/O GN D 7.5 V Clamp ing Voltage VC IPP = 5A, tp = 8/20μs Any I/O to GN D 16 V Junction Cap acitance Cj VR = 0V, f = 1MHz Any I/O p in to GN D 0.8 pF Reverse Stand-Off Voltage VR = 0V, f = 1MHz Between I/O p ins © 2008 Semtech Corp. 3 Minimum Typical 0.4 Maximum Units 3.3 V pF www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 10 110 % of Rated Power or IPP Peak Pulse Power - PPP (kW) 100 1 0.1 90 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 25 Pulse Duration - tp (us) Pulse Waveform 90 e-t 50 td = IPP/2 30 125 150 1 CJ(VR) / CJ(VR=0) Percent of I PP 80 40 100 1.2 Waveform Parameters: tr = 8µs td = 20µs 100 60 75 Normalized Capacitance vs. Reverse Voltage 110 70 50 Ambient Temperature - TA (oC) 0.8 0.6 0.4 20 0.2 10 f = 1 MHz 0 0 5 10 15 20 25 0 30 0 Time (µs) 0.5 1 1.5 2 2.5 3 3.5 Reverse Voltage - VR (V) Clamping Voltage vs. Peak Pulse Current I/O to GND Clamping Voltage vs. Peak Pulse Current I/O to I/O 15 20 Clamping Voltage - VC (V) Clamping Voltage - VC (V) RClamp3304P 10 RClamp2504P 5 Waveform Parameters: tr = 8μs td = 20μs 0 RClamp3304P 15 10 RClamp2504P Waveform Parameters: tr = 8μs td = 20μs 5 0 0 1 2 3 4 5 6 0 Peak Pulse Current - IPP (A) © 2008 Semtech Corp. 1 2 3 4 5 6 Peak Pulse Current - IPP (A) 4 www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Typical Characteristics Insertion Loss S21 (I/O to Gnd) Analog Crosstalk CH1 S21 CH1 S21 LOG LOG 20 dB /REF 0 dB 6 dB / REF 0 dB 1: -.2624 dB 900 MHz 4 0 dB 2 2: -.1344 dB 1.8 GHz 3 3: -.0603 dB 2.5 GHz -6 dB -12 dB -18 dB -24 dB -30 dB -36 dB 10 MHz 100 MHz START. 030 MHz 3 1 GHz GHz STOP 3000. 000000 MHz START. 030 MHz STOP 3000. 000000 MHz ESD Clamping (8kV Contact per IEC 61000-4-2) Note: Data is taken with a 10x attenuator © 2008 Semtech Corp. 5 www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Applications Information Device Connection for Protection of Four High-Speed Data Lines Figure 1 iguration (T op Side Vie w) 1.. Pin Conf Configuration (Top View) These devices are designed to protect low voltage data lines operating at 2.5 volts or 3.3 volts. When the voltage on the protected line exceeds the TVS working voltage, the steering diodes are forward biased, conducting the transient current away from the sensitive circuitry, through the internal TVS to ground. Data lines are connected at pins 1, 2, 5 and 6. The center pin should be connected directly to a ground plane. The path length is kept as short as possible to minimize parasitic inductance. For best results, multiple micro-vias connected to ground are recommended. Pins 3 and 4 are not connected. 1 2 6 Gnd 3 Note that pin 3 is connected internally to the cathode of the low voltage TVS. It is not recommended that this pins be directly connected to a DC source greater than the snap-back votlage (VSB) as the device can latch on as described below. 5 4 Pin Ide ntificatio n 1, 2, 5, 6 Inp ut/Outp ut Lines 4 N ot Connected 3 2.5V or 3.3V (Do not connect this p in to a DC sup p ly) greater than VSB) Center Tab Ground EPD TVS Characteristics These devices are constructed using Semtech’s proprietary EPD technology. By utilizing the EPD technology, the device can effectively operate at 3.3V while maintaining excellent electrical characteristics. Protection of Four Data Lines The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. 1 Gnd and snap-back current (ISB). To return to a nonconducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state. When the TVS is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristics due to its structure. This point is defined on the curve by the snap-back voltage (VSB) © 2008 Semtech Corp. 6 www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Typical Applications Gnd 1 SIM Port - Protection of Three Data Lines and VCC © 2008 Semtech Corp. 7 www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Applications Information - Spice Model RClamp2504P Spice Model R Clamp2504P Spice Parameters © 2008 Semtech Corp. Parameter Unit D1 (LCR D) D2 (LCR D) D3 (T VS) IS Amp 1E-20 1E-20 2.19E-12 BV Volt 100 100 2.88 VJ Volt 0.7 0.7 0.6 RS Ohm 0.456 0.714 0.195 IB V Amp 1E-3 1E-3 1E-3 CJO Farad 0.3E-12 0.3E-12 63E-12 TT sec 2.541E-9 2.541E-9 2.541E-9 M -- 0.01 0.01 0.16 N -- 1.1 1.1 1.1 EG eV 1.11 1.11 1.11 8 www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Applications Information - Spice Model RClamp3304P Spice Model R Clamp3304P Spice Parameters © 2008 Semtech Corp. Parameter Unit D1 (LCR D) D2 (LCR D) D3 (T VS) IS Amp 1E-20 1E-20 2.19E-12 BV Volt 100 100 3.3 VJ Volt 0.70 0.70 0.62 RS Ohm 0.456 0.714 0.36 IB V Amp 1E-3 1E-3 1E-3 CJO Farad 0.3E-12 0.3E-12 73E-12 TT sec 2.541E-9 2.541E-9 2.541E-9 M -- 0.01 0.01 0.18 N -- 1.1 1.1 1.1 EG eV 1.11 1.11 1.11 9 www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Outline Drawing - SLP1616P6 A B D PIN 1 INDICATOR (LASER MARK) DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX E A SEATING PLANE aaa C A2 A A1 A2 b D D1 E E1 e L N aaa bbb C A1 D1 1 2 LxN E/2 E1 .020 .023 .026 0.00 .001 .002 (.006) .007 .010 .012 .059 .063 .067 .041 .047 .051 .059 .063 .067 .016 .022 .026 .020 BSC .013 .013 .016 6 .004 .004 0.50 0.58 0.65 0.00 0.03 0.05 (0.15) 0.20 0.25 0.30 1.50 1.60 1.70 1.05 1.20 1.30 1.50 1.60 1.70 0.40 0.55 0.65 0.50 BSC 0.25 0.33 0.40 6 0.09 0.09 N bxN bbb e C A B D/2 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP1616P6 P X DIMENSIONS Z F G DIM B C P F G X Y Z (C) Y INCHES .051 .060 .020 .018 .035 .012 .025 .085 MILLIMETERS 1.30 1.52 0.50 0.45 0.89 0.30 0.63 2.15 B NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET © 2008 Semtech Corp. 10 www.semtech.com RClamp2504P & RClamp3304P PROTECTION PRODUCTS Marking 2504P YW Ordering Information 3304P YW Part Number Working Voltage Qty per Reel R eel Size RClamp2504P.TCT 2.5 Volts 3,000 7 Inch RClamp3304P.TCT 3.3 Volts 3,000 7 Inch RailClamp and RClamp are marks of Semtech Corporation RClamp2504P RClamp3304P YW = Date Code Tape and Reel Specification Device Orientation in Tape (Pin 1 upper left towards sprocket holes) A0 1.78 +/-0.10 mm Tape Width 8 mm B0 K0 1.78 +/-0.10 mm B, (Max) D 4.2 mm 1.5 + 0.1 mm - 0.0 mm ) 0.69 +/-0.10 mm D1 E 0.5 mm ±0.05 1.750±.10 mm F 3.5±0.05 mm K (MAX) P P0 P2 2.4 mm 4.0±0.1 mm 4.0±0.1 mm 2.0±0.05 mm T(MAX) 0.4 mm W 8.0 mm + 0.3 mm - 0.1 mm Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2008 Semtech Corp. 11 www.semtech.com