Data Sheet

')
1
PMFPB6532UP
20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky
combination
Rev. 2 — 1 June 2012
Product data sheet
1. Product profile
1.1 General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench
MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits





Trench MOSFET technology
Integrated ultra low VF MEGA Schottky diode
1 kV ElectroStatic Discharge (ESD) protection
Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
Exposed drain pad for excellent thermal conduction
1.3 Applications




Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MOSFET transistor
VDS
drain-source voltage
Tamb = 25 °C
-
-
−20
V
VGS
gate-source voltage
Tamb = 25 °C
-
-
±8
V
ID
drain current
Tamb = 25 °C;
VGS = −4.5 V
[1]
-
-
−3.5
A
RDSon
drain-source on-state
resistance
Tj = 25 °C;
VGS = −4.5 V;
ID = −1 A
[2]
-
58
70
mΩ
PMFPB6532UP
NXP Semiconductors
P-channel MOSFET-Schottky combination
Table 1.
Quick reference data …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Schottky diode
IF
forward current
Tsp ≤ 133 °C
-
-
2
A
VR
reverse voltage
Tamb = 25 °C
-
-
20
V
VF
forward voltage
Tamb = 25 °C;
IF = 1 A
-
320
365
mV
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 6 cm2.
[2]
Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
A
anode
2
n.c.
not connected
3
D
drain
4
S
source
5
G
gate
6
K
cathode
7
K
cathode
8
D
drain
Simplified outline
6
5
7
1
Graphic symbol
4
8
2
D
A
S
K
G
3
Transparent top view
017aaa600
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMFPB6532UP DFN2020-6 plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals; body 2 × 2 × 0.65 mm
SOT1118
4. Marking
Table 4.
PMFPB6532UP
Product data sheet
Marking codes
Type number
Marking code
PMFPB6532UP
1B
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NXP Semiconductors
P-channel MOSFET-Schottky combination
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
MOSFET transistor
VDS
drain-source voltage
Tamb = 25 °C
-
−20
V
VGS
gate-source voltage
Tamb = 25 °C
-
±8
V
ID
drain current
VGS = −4.5 V
-
−3.5
A
[1]
Tamb = 25 °C
Tamb = 100 °C
IDM
peak drain current
Tamb = 25 °C;
single pulse; tp ≤ 10 μs
Ptot
total power dissipation
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
-
−2.7
A
-
−20
A
-
520
mW
-
1.25
W
-
8.3
W
Source-drain diode
source current
IS
Tamb = 25 °C
[1]
-
−1.4
A
human body model;
C = 100 pF; R = 1.5 kΩ
[3]
-
1000
V
ESD maximum rating
VESD
electrostatic discharge
voltage
Schottky diode
VR
reverse voltage
Tamb = 25 °C
-
20
V
IF
forward current
Tsp ≤ 133 °C
-
2
A
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ ≤ 0.25;
Tamb = 25 °C
-
7
A
IFSM
non-repetitive peak
forward current
tp = 8 ms; square wave
[4]
-
18
A
tp = 8 ms; half-sine wave
[5]
-
25
A
Tamb = 25 °C
[2]
-
480
mW
[1]
-
1190
mW
-
8.3
W
total power dissipation
Ptot
Tsp = 25 °C
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
PMFPB6532UP
Product data sheet
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Measured between all pins.
[4]
Tj = 25 °C prior to surge.
[5]
Calculated from square-wave measurements; Tj = 25 °C prior to surge.
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PMFPB6532UP
NXP Semiconductors
P-channel MOSFET-Schottky combination
017aaa001
120
017aaa002
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
−25
25
75
0
−75
125
175
Tamb (°C)
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
Fig 1.
−25
25
75
125
175
Tamb (°C)
ID
I der = -------------------- × 100 %
I D ( 25°C )
MOSFET transistor: Normalized total power
dissipation as a function of ambient
temperature
Fig 2.
MOSFET transistor: Normalized continuous
drain current as a function of ambient
temperature
017aaa066
−102
ID
(A)
Limit RDSon = VDS/ID
−10
(1)
(2)
−1
(3)
(4)
(5)
−10−1
(6)
−10−2
−10−1
−1
−10
VDS (V)
−102
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3.
MOSFET transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
PMFPB6532UP
Product data sheet
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NXP Semiconductors
P-channel MOSFET-Schottky combination
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
240
K/W
[2]
-
-
100
K/W
-
-
15
K/W
[1]
-
-
260
K/W
[2]
-
-
105
K/W
-
-
15
K/W
MOSFET transistor
Rth(j-a)
Rth(j-sp)
thermal resistance from
junction to ambient
in free air
thermal resistance from
junction to solder point
Schottky diode
Rth(j-a)
Rth(j-sp)
thermal resistance from
junction to ambient
in free air
thermal resistance from
junction to solder point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
017aaa067
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.33
0.25
0.1
0.2
0.05
10
0
1
10−3
0.02
0.01
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 4.
MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
PMFPB6532UP
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Product data sheet
Rev. 2 — 1 June 2012
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PMFPB6532UP
NXP Semiconductors
P-channel MOSFET-Schottky combination
017aaa068
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 6 cm2
Fig 5.
MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
017aaa082
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.33
0.25
0.1
10
0
1
10−3
0.2
0.05
0.02
0.01
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 6.
Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMFPB6532UP
Product data sheet
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6 of 18
PMFPB6532UP
NXP Semiconductors
P-channel MOSFET-Schottky combination
017aaa083
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.25
0.33
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
102
10
103
tp (s)
FR4 PCB, mounting pad for cathode 6 cm2
Fig 7.
Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MOSFET transistor
Static characteristics
V(BR)DSS
drain-source breakdown ID = −250 μA; VGS = 0 V
voltage
−20
-
-
V
VGS(th)
gate-source threshold
voltage
ID = −250 μA; VDS = VGS
−0.4
−0.7
−1
V
IDSS
drain leakage current
VDS = −16 V; VGS = 0 V
Tj = 25 °C
-
-
−1
μA
Tj = 150 °C
-
-
−10
μA
-
1
±10
μA
VGS = −4.5 V; ID = −1 A
-
58
70
mΩ
VGS = −4.5 V; ID = −1 A;
Tj = 150 °C
-
80
100
mΩ
VGS = −2.5 V; ID = −1 A
-
72
90
mΩ
VGS = −1.8 V;
ID = −0.5 A
-
100
165
mΩ
-
8
-
S
IGSS
RDSon
gfs
PMFPB6532UP
Product data sheet
gate leakage current
drain-source on-state
resistance
forward
transconductance
VGS = ±8 V; VDS = 0 V
[1]
VDS = −5 V; ID = −1 A
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[1]
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P-channel MOSFET-Schottky combination
Table 7.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = −3.3 A;
VDS = −10 V;
VGS = −4.5 V
-
4.5
6
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
-
0.8
-
nC
-
1
-
nC
Ciss
input capacitance
-
380
-
pF
Coss
output capacitance
-
72
-
pF
Crss
reverse transfer
capacitance
-
61
-
pF
td(on)
turn-on delay time
-
5
-
ns
tr
rise time
-
10
-
ns
td(off)
tf
turn-off delay time
-
57
-
ns
fall time
-
35
-
ns
IS = −1.3 A; VGS = 0 V
-
−0.75 −1
V
IF = 100 mA
-
225
275
mV
IF = 500 mA
-
285
335
mV
IF = 1 A
-
320
365
mV
VR = 5 V
-
65
220
μA
VR = 5 V; Tj = 125 °C
-
13
50
mA
VR = 10 V
-
110
400
μA
VR = 20 V
-
230
700
μA
VR = 5 V; f = 1 MHz
-
60
70
pF
VGS = 0 V; VDS = −10 V;
f = 1 MHz
VDS = −15 V; RL = 15 Ω;
VGS = −10 V; RG = 6 Ω
Source-drain diode
VSD
source-drain voltage
Schottky diode
VF
IR
Cd
[1]
PMFPB6532UP
Product data sheet
forward voltage
reverse current
diode capacitance
Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
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NXP Semiconductors
P-channel MOSFET-Schottky combination
017aaa069
−10.0
ID
(A)
017aaa070
−10−3
VGS = −3.0 V
−2.0 V
−8.0
ID
(A)
−2.4 V
−2.2 V
−1.8 V
−6.0
(1)
(2)
(3)
−10−4
−4.0
−1.6 V
−2.0
−1.4 V
0.0
0.0
−1.0
−2.0
−3.0
VDS (V)
−4.0
−10−5
0.0
Tamb = 25 °C
−0.4
−0.8
VGS (V)
−1.2
Tamb = 25 °C; VDS = −5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 8.
MOSFET transistor: Output characteristics:
drain current as a function of drain-source
voltage; typical values
017aaa071
0.20
(1)
MOSFET transistor: Sub-threshold drain
current as a function of gate-source voltage
017aaa072
0.20
(2)
RDson
(Ω)
Fig 9.
RDSon
(Ω)
0.15
0.15
(3)
(4)
0.10
0.10
(5)
(1)
(2)
(6)
0.05
0.0
−1.0
−2.0
−3.0
−4.0
−5.0
ID (A)
0.05
−6.0
0.0
0.0
Tamb = 25 °C
−2.0
−4.0
VGS (V)
−6.0
ID = −1 A
(1) VGS = −1.5 V
(1) Tamb = 150 °C
(2) VGS = −1.6 V
(2) Tamb = 25 °C
(3) VGS = −1.8 V
(4) VGS = −2 V
(5) VGS = −2.5 V
(6) VGS = −4.5 V
Fig 10. MOSFET transistor: Drain-source on-state
resistance as a function of drain current;
typical values
PMFPB6532UP
Product data sheet
Fig 11. MOSFET transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
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PMFPB6532UP
NXP Semiconductors
P-channel MOSFET-Schottky combination
017aaa073
−6.0
(1)
017aaa074
2.0
(2)
a
ID
(A)
1.5
−4.0
(2)
(1)
1.0
−2.0
0.5
0.0
0.0
−0.5
−1.0
−1.5
VGS (V)
−2.0
0.0
−60
VDS > ID × RDSon
0
60
120
180
Tamb (°C)
R DSon
a = ----------------------------R DSon ( 25°C )
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 12. MOSFET transistor: Transfer characteristics:
drain current as a function of gate-source
voltage; typical values
017aaa075
−1.5
Fig 13. MOSFET transistor: Normalized drain-source
on-state resistance as a function of ambient
temperature; typical values
017aaa076
103
(1)
VGS(th)
(V)
C
(pF)
(1)
−1.0
(2)
102
(2)
(3)
−0.5
(3)
0.0
−60
0
60
120
180
Tamb (°C)
10
−10−1
ID = −0.25 mA; VDS = VGS
(1) Ciss
(2) typical values
(2) Coss
(3) minimum values
(3) Crss
Fig 14. MOSFET transistor: Gate-source threshold
voltage as a function of ambient temperature
Product data sheet
−10
VDS (V)
−102
f = 1 MHz; VGS = 0 V
(1) maximum values
PMFPB6532UP
−1
Fig 15. MOSFET transistor: Input, output and reverse
transfer capacitances as a function of
drain-source voltage; typical values
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PMFPB6532UP
NXP Semiconductors
P-channel MOSFET-Schottky combination
017aaa077
−5.0
VGS
(V)
−4.0
VDS
ID
−3.0
VGS(pl)
−2.0
VGS(th)
VGS
−1.0
QGS1
0.0
0.0
QGS2
QGS
1.25
2.5
3.75
5.0
QGD
QG(tot)
QG (nC)
003aaa508
ID = −3.3 A; VDS = −10 V; Tamb = 25 °C
Fig 16. MOSFET transistor: Gate-source voltage as a
function of gate charge; typical values
Fig 17. MOSFET transistor: Gate charge waveform
definitions
017aaa078
−6.0
IS
(A)
−4.0
(1)
(2)
−2.0
0.0
0.0
−0.4
−0.8
VSD (V)
−1.2
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 18. MOSFET transistor: Source current as a function of source-drain voltage; typical values
PMFPB6532UP
Product data sheet
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NXP Semiconductors
P-channel MOSFET-Schottky combination
017aaa084
10
IF
(A)
(1)
(2)
017aaa085
1
IR
(A)
10−1
(1)
10−2
(2)
1
10−1
(3)
(4)
10−3
(5)
(3)
10−4
10−2
10−5
10−3
10−6
10−4
0.0
(4)
10−7
0.2
0.4
0.6
0.8
0
1.0
5
10
15
VF (V)
20
VR (V)
(1) Tj = 150 °C
(1) Tj = 125 °C
(2) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = 25 °C
(4) Tj = −40 °C
(5) Tj = −40 °C
Fig 19. Schottky diode: Forward current as a function
of forward voltage; typical values
017aaa086
250
Fig 20. Schottky diode: Reverse current as a function
of reverse voltage; typical values
017aaa087
2.4
Cd
(pF)
(1)
IF(AV)
(A)
200
1.6
(2)
150
(3)
100
0.8
(4)
50
0
0.0
0
5
10
15
20
0
25
50
VR (V)
f = 1 MHz; Tamb = 25 °C
75
100
125
150
175
Tamb (°C)
FR4 PCB, mounting pad for cathode 6 cm2
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 21. Schottky diode: Diode capacitance as a
function of reverse voltage; typical values
PMFPB6532UP
Product data sheet
Fig 22. Schottky diode: Average forward current as a
function of ambient temperature; typical
values
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P-channel MOSFET-Schottky combination
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 23. Duty cycle definition
9. Package outline
2.1
1.9
0.65
max
1.1
0.9
2.1
1.9
0.77
0.57
(2×)
0.54
0.44
(2×)
0.04
max
3
4
1
6
0.65
(4×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig 24. Package outline DFN2020-6 (SOT1118)
PMFPB6532UP
Product data sheet
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P-channel MOSFET-Schottky combination
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
solder paste
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
(6×)
0.45
(6×)
0.72
(2×)
0.82
(2×)
sot1118_fr
Fig 25. Reflow soldering footprint DFN2020-6 (SOT1118)
PMFPB6532UP
Product data sheet
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P-channel MOSFET-Schottky combination
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMFPB6532UP v.2
20120601
Product data sheet
-
PMFPB6532UP v.1
Modifications:
PMFPB6532UP v.1
PMFPB6532UP
Product data sheet
•
•
•
Section 1.1 “General description”: updated
Table 2 “Pinning”: graphic symbol drawing updated
Figure 24: replaced with minimized package outline drawing
20110309
Product data sheet
-
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Rev. 2 — 1 June 2012
-
© NXP B.V. 2012. All rights reserved.
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P-channel MOSFET-Schottky combination
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
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P-channel MOSFET-Schottky combination
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: sale[email protected]
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Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
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P-channel MOSFET-Schottky combination
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 June 2012
Document identifier: PMFPB6532UP