Data Sheet

SO
T8
83
B
PMZB600UNE
20 V, N-channel Trench MOSFET
21 July 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
Trench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
0.6
A
-
470
620
mΩ
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 1 cm .
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PMZB600UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
Simplified outline
gate
2
S
source
3
D
drain
Graphic symbol
D
1
3
2
Transparent
top view
G
DFN1006B-3 (SOT883B)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
PMZB600UNE
Package
Name
Description
Version
DFN1006B-3
DFN1006B-3: leadless ultra small plastic package; 3 solder
lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMZB600UNE
0101 1000
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
PMZB600UNE
Product data sheet
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20 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
0.6
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
0.4
A
-
2.5
A
[2]
-
360
mW
[1]
-
715
mW
-
2700
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.4
A
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 2.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMZB600UNE
Product data sheet
0
- 75
175
Fig. 3.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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25
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PMZB600UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-012964
10
Limit RDSon = VDS/ID
ID
(A)
tp = 100 µs
1
tp = 1 ms
10-1
tp = 10 ms
DC; Tsp = 25 °C
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
10-2
10-1
1
10
102
VDS (V)
IDM = single pulse
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
PMZB600UNE
Product data sheet
Min
Typ
Max
Unit
[1]
-
305
360
K/W
[2]
-
150
175
K/W
-
-
40
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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PMZB600UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
017aaa109
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.25
0.33
0.2
0.1
0
10
10- 3
0.05
0.02
0.01
10- 2
10- 1
FR4 PCB, mounting pad for drain 1 cm
Fig. 6.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB600UNE
Product data sheet
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20 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.45
0.7
0.95
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 20 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C
-
470
620
mΩ
VGS = 4.5 V; ID = 0.6 A; Tj = 150 °C
-
760
1000
mΩ
VGS = 2.5 V; ID = 0.5 A; Tj = 25 °C
-
620
850
mΩ
VGS = 1.8 V; ID = 0.1 A; Tj = 25 °C
-
845
1300
mΩ
VGS = 1.5 V; ID = 10 mA; Tj = 25 °C
-
1125
3000
mΩ
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C
-
2210
-
mΩ
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 5 V; ID = 0.6 A; Tj = 25 °C
-
1
-
S
RG
gate resistance
f = 1 MHz
-
34
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 10 V; ID = 0.6 A; VGS = 4.5 V;
-
0.4
0.7
nC
QGS
gate-source charge
Tj = 25 °C
-
0.1
-
nC
QGD
gate-drain charge
-
0.1
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
21.3
-
pF
Coss
output capacitance
Tj = 25 °C
-
5.4
-
pF
Crss
reverse transfer
capacitance
-
4.2
-
pF
td(on)
turn-on delay time
VDS = 10 V; ID = 0.6 A; VGS = 4.5 V;
-
5.6
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
9.2
-
ns
td(off)
turn-off delay time
-
19
-
ns
tf
fall time
-
51
-
ns
PMZB600UNE
Product data sheet
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NXP Semiconductors
20 V, N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IS = 0.36 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
Source-drain diode
VSD
source-drain voltage
aaa-008998
2.5
4.5 V
ID
(A)
aaa-008999
10-3
ID
(A)
2.0
2.5 V
10-4
1.5
min
1.0
1.8 V
0.5
typ
max
10-5
1.5 V
VGS = 1.2 V
0
Fig. 7.
0
1
2
3
10-6
4
VDS (V)
0
0.5
1.0
VGS (V)
1.5
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 8.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-009000
3
RDSon
(Ω)
1.5 V
1.2 V
1.8 V
aaa-009001
3
2V
RDSon
(Ω)
2.5 V
2
2
3V
1
1
Tj = 150 °C
VGS = 4.5 V
0
0
0.5
1.0
1.5
2.0
ID (A)
Tj = 25 °C
0
2.5
Tj = 25 °C
Fig. 9.
Product data sheet
1
2
3
4
VGS (V)
5
ID = 0.6 A
Drain-source on-state resistance as a function
of drain current; typical values
PMZB600UNE
0
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-009002
2.5
aaa-009003
2.0
ID
(A)
a
2.0
1.5
1.5
1.0
1.0
Tj = 150 °C
0.5
0
0
1
Tj = 25 °C
2
0.5
3
4
VGS (V)
0
-60
5
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
180
aaa-009005
102
VGS(th)
(V)
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-009004
1.5
0
C
(pF)
1.0
Ciss
10
max
Coss
0.5
typ
Crss
min
0
-60
0
60
120
Tj (°C)
1
10-1
180
ID = 0.25 mA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
PMZB600UNE
1
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMZB600UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-009006
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
017aaa137
0
0
0.1
0.2
0.3
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
0.4
0.5
QG (nC)
ID = 0.6 A; VDS = 10 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-009007
2.5
IS
(A)
2.0
1.5
1.0
0.5
0
Tj = 150 °C
0
0.4
Tj = 25 °C
0.8
1.2
1.6
2.0
VSD (V)
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 18. Duty cycle definition
PMZB600UNE
Product data sheet
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20 V, N-channel Trench MOSFET
12. Package outline
0.65
0.55
0.40
0.34
0.35
1
2
0.20
0.12
0.04 max
0.30
0.22
1.05
0.65
0.95
0.30
0.22
3
0.55
0.47
Dimensions in mm
11-11-02
Fig. 19. Package outline DFN1006B-3 (SOT883B)
13. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B)
PMZB600UNE
Product data sheet
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20 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMZB600UNE v.1
20140721
Product data sheet
-
-
PMZB600UNE
Product data sheet
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20 V, N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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Preview — The document is a preview version only. The document is still
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NXP Semiconductors does not give any representations or warranties as to
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
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is deemed to offer functions and qualities beyond those described in the
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PMZB600UNE
Product data sheet
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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20 V, N-channel Trench MOSFET
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Notice: All referenced brands, product names, service names and
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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
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Corporation.
PMZB600UNE
Product data sheet
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20 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 10
14
Revision history ................................................... 11
15
15.1
15.2
15.3
15.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 21 July 2014
PMZB600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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