RClamp3374N Datasheet

RClamp3374N
High Power TVS for
Ethernet Interfaces
PROTECTION PRODUCTS - RailClamp®
Description
PRELIMINARY
Features
RailClamp TVS diodes are specifically designed to
protect sensitive components which are connected to
high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE
(cable discharge events), and EFT (electrical fast
transients).
The unique design incorporates surge rated, low
capacitance steering diodes and a TVS diode in a
single package. The RClamp®3374N is designed to
replace up to two components for board level GbE
protection. Each device is designed to protect two line
pairs. This is accomplished by routing traces through
the device. When connected in this fashion, the device
can withstand a high level of surge current (40A, 8/
20us) while maintaining a low loading capacitance of
less than 5pF. The high surge capability means it can
be used in high threat environments in applications
such as Gigabit Ethernet, telecommunication lines, and
LVDS interfaces.
The RClamp3374N is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low stand-off voltages with significant reductions in leakage current and capacitance over siliconavalanche diode processes. It features a true operating voltage of 3.3 volts for superior protection.
The RClamp3374N is in a 10-pin SLP3020N10 package. It measures 3.0 x 2.0 x 0.60mm. The leads are
finished with lead-free NiPdAu.
®
‹ Transient protection for high-speed data lines to
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IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 40A (8/20μs)
Array of surge rated diodes with internal TVS Diode
Qualified to AEC-Q100 Grade 1 (-45 to +125oC)
Protects up to eight lines
Low capacitance for high-speed interfaces
Low variation in capacitance vs. bias voltage
Low clamping voltage
Low operating voltage: 3.3V
Solid-state silicon-avalanche technology
Mechanical Characteristics
‹
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SLP3020N10 10L package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 3.0 x 2.0 x 0.60 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code + Date code
Packaging : Tape and Reel
Applications
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Circuit Diagram
10/100/1000 Ethernet
Automotive
Central Office Equipment
LVDS Interfaces
MagJacks / Integrated Magnetics
Notebooks / Desktops / Servers
Pin Configuration
Pin 1
LINE 1 In
Pin 4
LINE 3 In
Line 1 In
1
10
Line 1 Out
GND
Line 2 In
Pin 10
LINE 1 Out
Pin 7
LINE 3 Out
Pin 2
LINE 2 In
Pin 5
LINE 4 In
Line 2 Out
GND
GND
GND
Line 3 In
Line 3 Out
GND
Line 4 In
Center Tabs
and Pins 3, 8
Revision 7/24/2012
6
5
Line 4 Out
Pin 6
LINE 4 Out
Pin 9
LINE 2 Out
Top View
1
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RClamp3374N
PRELIMINARY
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20μs)1
Pp k
1000
Watts
Peak Pulse Current (tp = 8/20μs)1
IP P
40
A
VESD
+/-30
+/-30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
ESD p er IEC 61000-4-2 (Air)
ESD p er IEC 61000-4-2 (Contact)
Op erating Temp erature
Storage Temp erature
Electrical Characteristics (T=25oC unless otherwise specified)
Parameter
Reverse Stand-Off Voltage
Symbol
Conditions
Minimum
Typical
VRWM
Maximum
Units
3.3
V
Punch-Through Voltage
V PT
IPT = 2μA
3.5
V
Snap -Back Voltage
VSB
ISB = 50mA
2.8
V
Reverse Leakage Current
IR
VRWM = 3.3V, T=25°C
0.5
μA
Reverse Leakage Current
IR
VRWM = 3.3V, T=125°C
1
μA
Clamp ing Voltage2
VC
IPP = 1A, tp = 8/20μs
Any I/O to Ground
5.5
V
Clamp ing Voltage2
VC
IPP = 10A, tp = 8/20μs
Any 1 I/O to Ground
10.5
V
Clamp ing Voltage2
VC
IPP = 25A, tp = 8/20μs
Any I/O to Ground
18
V
Clamp ing Voltage1,2
VC
IPP = 40A, tp = 8/20μs
Line-to-Line, two I/O p ins
connected together on each
line (N ote 1)
25
V
Junction Cap acitance2
Cj
VR = 0V, f = 1MHz
Any I/O to Ground
3.6
5
pF
VR = 0V, f = 1MHz
Between I/O p ins
1.7
pF
Notes:
1) Ratings with 2 pins connected together per the recommended configuration (ie pin 1 connected to pin 10, pin 2 connected to pin 9, pin 4
connected to pin 7, and pin 5 connected to pin 6).
2) Guaranteed by design (not production tested)
© 2012 Semtech Corporation
2
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RClamp3374N
PRELIMINARY
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
Peak Pulse Power - P PP (kW)
10
120
% of Rated Power or IPP
100
1
80
60
40
20
0.1
0.1
1
10
100
0
1000
0
Pulse Duration - tp (us)
25
50
75
100
125
150
O
Ambient Temperature - TA ( C)
Clamping Voltage vs. Peak Pulse Current
Forward Clamping Voltage vs. Peak Pulse Current
15
25
I/O to GND
I/O to I/O
2 I/O to GND
2 I/O to 2 I/O
Clamping Voltage - Vc(V)
Clamping Voltage - Vc(V)
20
GND to 1 I/O
GND to 2 I/O
15
10
10
5
Waveform
Parameters:
tr = 8µs
td = 20µs
5
0
0
0
10
20
30
40
0
50
10
20
Capacitance vs. Reverse Voltage
40
50
Typical TLP Characteristic
30
5.0
TLP
Parameters:
tp = 100ns
tr = 200ps
I/O to GND
I/O to I/O
25
4.0
20
3.0
Current (A)
Capacitance - Cj(pf)
30
Peak Pulse Current - Ipp (A)
Peak Pulse Current - Ipp (A)
2.0
15
Rdyn=0.23 Ohms
10
1.0
5
f = 1 MHz
0.0
0
1
2
3
0
4
0
Reverse Voltage - VR(V)
© 2012 Semtech Corporation
2
4
6
8
10
12
Voltage (V)
3
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RClamp3374N
PRELIMINARY
PROTECTION PRODUCTS
Typical Characteristics (Con’t)
Insertion Loss S21 (I/O to I/O)
Insertion Loss S21 (I/O to Gnd)
CH1 S21
LOG
6 dB / REF 0 dB
CH1 S21
LOG
6 dB / REF 0 dB
1: - 0.5954 dB
800 MHz
0 dB
1: - 0.3708 dB
800 MHz
2: - 0.6386 dB
900 MHz
0 dB
3: - 1.9606 dB
1.8 GHz
-6 dB
2: - 0.3976 dB
900 MHz
3
5
4
-12 dB
3
-18 dB
-30 dB
-36 dB
-36 dB
-42 dB
-42 dB
10
MHz
100
MHz
-48 dB
3
1
GHz GHz
STOP 3000. 000000 MHz
START . 030 MHz
LOG
1
MHz
10
MHz
100
MHz
3
1
GHz GHz
STOP 3000. 000000 MHz
START . 030 MHz
Insertion Loss S21 (2 I/O to Gnd)
CH1 S21
5: - 4.3385 dB
2.7 GHz
-24 dB
-30 dB
1
MHz
4: - 3.4436 dB
2.5 GHz
-18 dB
5: - 5.2975 dB
2.7 GHz
-24 dB
3: - 1.3979 dB
1.8 GHz
4
-12 dB
4: - 4.3959 dB
2.5 GHz
-48 dB
5
12
12
-6 dB
Insertion Loss S21 (2 I/O to 2 I/O)
6 dB / REF 0 dB
CH1 S21
LOG
6 dB / REF 0 dB
1: - 2.3263 dB
800 MHz
1: - 1.1102 dB
800 MHz
2: - 2.5056 dB
900 MHz
0 dB
12
-6 dB
3
5
12
3: - 5.7891 dB
1.8 GHz
-6 dB
3
5
3: - 3.4256 dB
1.8 GHz
4
-12 dB
4
-18 dB
-12 dB
4: - 9.2386 dB
2.5 GHz
4: - 6.8820 dB
2.5 GHz
-18 dB
5: - 10.111 dB
2.7 GHz
-24 dB
-30 dB
-36 dB
-36 dB
-42 dB
-42 dB
1
MHz
START . 030 MHz
© 2012 Semtech Corporation
10
MHz
100
MHz
5: - 7.9734 dB
2.7 GHz
-24 dB
-30 dB
-48 dB
2: - 1.1958 dB
900 MHz
0 dB
-48 dB
3
1
GHz GHz
STOP 3000. 000000 MHz
1
MHz
START . 030 MHz
4
10
MHz
100
MHz
3
1
GHz GHz
STOP 3000. 000000 MHz
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RClamp3374N
PRELIMINARY
PROTECTION PRODUCTS
Typical Characteristics (Con’t)
Analog Crosstalk (I/O to GND)
CH1 S21
LOG
Analog Crosstalk (I/O to I/O)
20dB / REF 0 dB
CH1 S21
0 dB
0 dB
-20 dB
-20 dB
-40 dB
-40 dB
-60 dB
-60 dB
-80 dB
-80 dB
-100 dB
-100 dB
-120 dB
-120 dB
-140 dB
-140 dB
-160 dB
LOG
20dB / REF 0 dB
-160 dB
STOP 3000. 000000 MHz
START . 030 MHz
START . 030 MHz
STOP 3000. 000000 MHz
ESD Clamping - I/O to Gnd
(8kV Contact per IEC 61000-4-2)
60
Clamping Voltage (V)
50
40
30
20
10
0
-20
0
20
40
60
80
Time (ns)
© 2012 Semtech Corporation
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RClamp3374N
PRELIMINARY
PROTECTION PRODUCTS
Applications Information
Pin Configuration
Device Connection Options for Protection of Four
High-Speed Data Lines
This device is designed to protect four high-speed data
lines (two line pairs). It has been optimized for use on
Ethernet interfaces where large magnitude lightning
and ESD surges are expected. The RClamp3374N is
constructed using Semtech’s proprietary EPD process
technology. The EPD process provides low stand-off
(turn-on) voltages with significant reductions while
maintaining good clamping characteristics and high
surge capability. They feature a true operating voltage
of 3.3 volts. Each I/O pin pair features a low
capacitance steering diode bridge that is designed to
route harmful surge current into the internal low
voltage TVS diode. Each data pair is rated to
withstand 1000 Watts of surge power (8/20us impulse
waveform). When placed on the PHY side of the
magnetics, it can be used to meet the requirements of
Telcordia GR-1089, K.20, K.21, and other high energy
surge standards.
The RClamp3374N is designed with a flow through pin
configuration for easy layout. In a GbE application, TX+
and TX- lines would enter at pins 1, 2, 4, and 5 and exit
at pins 10, 9, 7, and 6 respectively. The traces should
be unbroken and run under the device as shown. Pins
3 and 8 are electrically connected to the three center
ground tabs. In a typical Ethernet application, these
pins as well as the tabs should be left floating (i.e. not
connected to ground).
© 2012 Semtech Corporation
Tx1+ In 1
10
Tx1+ Out
GND
Tx1- In
Tx1- Out
GND
GND
GND
Tx2+ In
Tx2+ Out
GND
Tx2- In 5
6
Tx2- Out
Layout Example
6
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RClamp3374N
PRELIMINARY
PROTECTION PRODUCTS
Applications Information
duration of the surge is attenuated by the inductance
of the magnetics. The amount of attenuation will vary
by vendor and configuration of the magnetics. It is
this transferred energy that must be clamped by the
protection circuitry.
Gigabit Ethernet Protection Solutions
Ethernet systems with connections external to the
building are subject to high-level transient threats.
This type of equipment may even be required to meet
the surge immunity requirements of Telcordia GR1089. Reliable protection of the Ethernet transceiver
requires a device that can absorb the expected
transient energy, clamp the incoming surge to a safe
level, and yet remain transparent to the system under
normal operation. The RClamp3374N has been
designed to meet these demanding requirements.
A typical protection scheme which utilizes the
RClamp3374N is shown in Figure 1. One device is
placed across two line pairs and is located on the PHY
side of the transformer as close to the magnetics as
possible. This is done to minimize parasitic inductance
and improve clamping performance. In this design, the
isolation voltage of the transformer is relied upon to
suppress common mode lightning surges. High voltage
capacitors and resistors are commonly utilized from
the center tap to ground to aid in transient protection.
Metallic surges will be transferred in some form to the
PHY side and clamped by the RClamp3374N. The
RClamp3374N will turn on when the voltage across it
exceeds the punch-through voltage of the device. Low
voltage turn on is important since many PHY chips
have integrated ESD protection structures. These
structures are for protection of the device during
manufacture and are not designed to handle large
amounts of energy. Should they turn on before the
external protection, they can be damaged resulting in
failure of the PHY chip.
Transient Protection
When designing Ethernet protection, the entire system
must be considered. An Ethernet port includes
interface magnetics in the form of transformers and
common mode chokes. Transformers and chokes can
be discrete components, but integrated solutions that
include the RJ-45 connector, resistors, capacitors, and
protection are also available. In either case, the
transformer will provide a high level of common mode
isolation to external voltages, but no protection for
metallic (line-to-line) surges. During a metallic
transient event, current will flow into one line, through
the transformer and back to the source. As the
current flows, it charges the windings of the
transformer on the line side. Once the surge is
removed, the windings on the line side will stop
charging and will transfer its stored energy to the IC
side where the PHY IC is located. The magnitude and
RClamp3374N
TP1+
RJ-45
Connector
TP1TP2+
1
2
TP2-
3
4
TP3+
5
GbE
Ethernet
PHY
6
7
TP3-
8
TP4+
TP4-
RClamp3374N
Figure 1 - GbE Protection to Lightning, ESD, and CDE
© 2012 Semtech Corporation
7
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RClamp3374N
PRELIMINARY
PROTECTION PRODUCTS
Outline
OutlineDrawing
Drawing- -SO-8
SLP3020N10
A
D
B
DIMENSIONS
DIM
PIN 1
INDICATOR
(LASER MARK)
A
A1
A2
b
b1
D
E
e
e1
e2
L
L1
N
aaa
bbb
E
A
SEATING
PLANE
aaa C
C
A1
A2
MILLIMETERS
MIN NOM MAX
0.50 0.60 0.65
0.00 0.03 0.05
(0.15)
0.15 0.20 0.25
0.25 0.35 0.45
2.90 3.00 3.10
1.90 2.00 2.10
0.60 BSC
0.65 BSC
0.95 BSC
0.25 0.30 0.35
0.95 1.00 1.05
10
0.08
0.10
D/2
3X b1
1
2
LxN
3X L1
L1 /2
E/2
N
bxN
e
bbb
C A B
e1
e2
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
Land Pattern - SLP3020N10
P1
X1
P
DIMENSIONS
0.50
(C)
Y1 G
Y
Z
DIM
C
G
P
P1
P2
X
X1
Y
Y1
Z
MILLIMETERS
(1.98)
1.40
0.60
0.65
0.95
0.25
0.40
0.58
1.00
2.56
P2
X
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
© 2012 Semtech Corporation
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RClamp3374N
PRELIMINARY
PROTECTION PRODUCTS
Marking Codes
Ordering Information
3374N
YYWW
Part Number
Working
Voltage
Qty per
Reel
R eel Size
RClamp 3374N .TCT
3.3 Volts
3,000
7 Inch
RailClamp and RClamp are trademarks of Semtech Corporation
1
YYWW = Date Code
Carrier Tape Specification
3374N
YYWW
3374N
YYWW
3374N
YYWW
Pin 1 Location (Towards Sprocket Holes)
User Direction of feed
Device Orientation in Tape
A0
2.24 +/-0.05 mm
B0
K0
3.23 +/-0.05 mm
Tape
Width
B, (Max)
D
8 mm
4.2 mm
1.5 + 0.1 mm
- 0.0 mm )
0.93 +/-0.05 mm
D1
E
0.5 mm
±0.05
1.750±.10
mm
F
K
(MAX)
P
P0
P2
T(MAX)
3.5±0.05
mm
2.4 mm
4.0±0.1
mm
4.0±0.1
mm
2.0±0.05
mm
0.4 mm
W
8.0 mm
+ 0.3 mm
- 0.1 mm
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
© 2012 Semtech Corporation
9
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