Data Sheet

020
-6
PMDPB85UPE
DF
N2
20 V dual P-channel Trench MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
 Low threshold voltage
 Trench MOSFET technology
 Very fast switching
 2 kV ElectroStatic Discharge (ESD)
protection
1.3 Applications
 Relay driver
 High-side load switch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-20
V
VGS
gate-source voltage
-8
-
8
V
-
-
-3.7
A
-
82
103
mΩ
Per transistor
drain current
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics (per transistor)
RDSon
[1]
drain-source on-state
resistance
VGS = -4.5 V; ID = -1.3 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB85UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
S1
source TR1
2
G1
gate TR1
3
D2
drain TR2
4
S2
source TR2
5
G2
gate TR2
6
D1
drain TR1
7
D1
drain TR1
Transparent top view
8
D2
drain TR2
DFN2020-6 (SOT1118)
6
5
7
1
Graphic symbol
8
2
D2
D1
4
G1
G2
3
S1
S2
017aaa260
3. Ordering information
Table 3.
Ordering information
Type number
Package
PMDPB85UPE
Name
Description
Version
DFN2020-6
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
SOT1118
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMDPB85UPE
2C
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-20
V
VGS
gate-source voltage
ID
drain current
Per transistor
-8
8
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-3.7
A
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-2.9
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-1.8
A
-
-11.6
A
[2]
-
515
mW
[1]
-
1170
mW
-
8330
mW
-
-1.2
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Source-drain diode
IS
source current
PMDPB85UPE
Product data sheet
Tamb = 25 °C
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
[1]
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20 V dual P-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
-
2000
V
ESD maximum rating
electrostatic discharge voltage
VESD
[3]
HBM; C = 100 pF; R = 1.5 kΩ
Per device
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3]
Measured between all pins.
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
Fig 1.
017aaa124
120
−25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMDPB85UPE
Product data sheet
0
−75
175
Fig 2.
−25
25
75
125
175
Tj (°C)
Normalized continuous drain current as a
function of junction temperature
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NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003928
-102
ID
(A)
Limit RDSon = VDS/ID
-10
tp = 100 μs
tp = 1 ms
-1
tp = 10 ms
tp = 100 ms
DC; Tsp = 25 °C
-10-1
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
-10-2
-10-1
-1
-102
-10
VDS (V)
IDM = single pulse
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
Min
Typ
Max
Unit
[1]
-
211
243
K/W
[2]
-
93
107
K/W
[2]
-
55
64
K/W
-
12
15
K/W
Per transistor
Rth(j-a)
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB85UPE
Product data sheet
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Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
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NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003929
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
0.05
10
0.02
0.01
1
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-003930
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.02
0.01
1
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 6 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB85UPE
Product data sheet
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Rev. 1 — 20 June 2012
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20 V dual P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.45
-0.7
-0.95
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-10
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = -4.5 V; ID = -1.3 A; Tj = 25 °C
-
82
103
mΩ
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
VGS = -4.5 V; ID = -1.3 A; Tj = 150 °C
-
114
144
mΩ
VGS = -2.5 V; ID = -1.1 A; Tj = 25 °C
-
107
146
mΩ
VGS = -1.8 V; ID = -0.8 A; Tj = 25 °C
-
142
210
mΩ
VDS = -10 V; ID = -1.3 A; Tj = 25 °C
-
6
-
S
-
5.4
8.1
nC
-
0.7
-
nC
-
1
-
nC
-
514
-
pF
-
78
-
pF
-
59
-
pF
-
6
-
ns
-
12
-
ns
Dynamic characteristics (per transistor)
QG(tot)
total gate charge
VDS = -10 V; ID = -1.3 A; VGS = -4.5 V;
Tj = 25 °C
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
47
-
ns
tf
fall time
-
21
-
ns
-
-0.7
-1.2
V
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -10 V; ID = -1.3 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
Source-drain diode (per transistor)
VSD
source-drain voltage
PMDPB85UPE
Product data sheet
IS = -0.3 A; VGS = 0 V; Tj = 25 °C
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Rev. 1 — 20 June 2012
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PMDPB85UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003931
-12
-8.0 V
-4.5 V
ID
(A)
017aaa143
–10–3
VGS = -2.5 V
-3.0 V
ID
(A)
-2.2 V
–10–4
-8
-2.0 V
(1)
(2)
(3)
-1.8 V
-4
–10–5
-1.6 V
0
0
-1
-2
-3
-4
–10–6
–0.2
–0.4
–0.6
–0.8
VDS (V)
–1.0
VGS (V)
Tj = 25 °C
Tj = 25 °C; VDS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-003932
400
VGS = -1.6 V
RDSon
(mΩ)
-2.0 V
-1.8 V
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
aaa-003933
400
-2.5 V
RDSon
(mΩ)
-2.2 V
300
300
200
200
Tj = 150 °C
-3.0 V
100
100
-4.5 V
-8.0 V
Tj = 25 °C
0
0
0
-4
-8
-12
0
ID (A)
Product data sheet
-6
ID = -1.3 A
Drain-source on-state resistance as a function
of drain current; typical values
PMDPB85UPE
-4
VGS (V)
Tj = 25 °C
Fig 8.
-2
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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20 V dual P-channel Trench MOSFET
aaa-003934
-12
aaa-003935
1.50
a
ID
(A)
1.25
-8
Tj = 25 °C
Tj = 150 °C
1.00
-4
0.75
0
0
-1
-2
-3
0.50
-60
0
60
120
VGS (V)
180
Tj (°C)
VDS > ID × RDSon
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-003936
-1.2
VGS(th)
(V)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
aaa-003937
103
Ciss
C
(pF)
max
-0.8
typ
102
Coss
Crss
min
-0.4
0.0
-60
0
60
120
180
10
-10-1
-1
Tj (°C)
VDS (V)
ID = -0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PMDPB85UPE
Product data sheet
-102
-10
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMDPB85UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003938
-5
VDS
VGS
(V)
ID
-4
VGS(pl)
-3
VGS(th)
VGS
-2
QGS1
QGS2
QGS
-1
QGD
QG(tot)
017aaa137
0
0
2
4
6
QG (nC)
ID = -1.3 A; VDS = -10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
aaa-003939
-5
IS
(A)
-4
-3
-2
Tj = 150 °C
Tj = 25 °C
-1
0
0.0
-0.4
-0.8
-1.2
VSD (V)
VGS = 0 V
Fig 16. Source current as a function of source-drain voltage; typical values
PMDPB85UPE
Product data sheet
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Rev. 1 — 20 June 2012
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20 V dual P-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 17. Duty cycle definition
9. Package outline
2.1
1.9
0.65
max
1.1
0.9
2.1
1.9
0.77
0.57
(2×)
0.54
0.44
(2×)
0.04
max
3
4
1
6
0.65
(4×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig 18. Package outline DFN2020-6 (SOT1118)
PMDPB85UPE
Product data sheet
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Rev. 1 — 20 June 2012
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20 V dual P-channel Trench MOSFET
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
solder paste
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
(6×)
0.45
(6×)
0.72
(2×)
0.82
(2×)
sot1118_fr
Fig 19. Reflow soldering footprint for DFN2020-6 (SOT1118)
PMDPB85UPE
Product data sheet
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Rev. 1 — 20 June 2012
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20 V dual P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMDPB85UPE v.1
20120620
Product data sheet
-
-
PMDPB85UPE
Product data sheet
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Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
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20 V dual P-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
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Preview — The document is a preview version only. The document is still
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Short data sheet — A short data sheet is an extract from a full data sheet
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sheet, which is available on request via the local NXP Semiconductors sales
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customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PMDPB85UPE
Product data sheet
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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andUCODE — are trademarks of NXP B.V.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PMDPB85UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
14 of 15
PMDPB85UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information . . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 June 2012
Document identifier: PMDPB85UPE