Data Sheet

SO
T4
57
PMN30UNE
20 V, N-channel Trench MOSFET
29 January 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1240 mW
ElectroStatic Discharge (ESD) protection > 1 kV HBM
3. Applications
•
•
•
•
LED driver
Power management
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
6
A
-
28
36
mΩ
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 4.8 A; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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PMN30UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
Simplified outline
Graphic symbol
6
5
4
1
2
3
D
G
TSOP6 (SOT457)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
PMN30UNE
Package
Name
Description
Version
TSOP6
plastic surface-mounted package (TSOP6); 6 leads
SOT457
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMN30UNE
G8
PMN30UNE
Product data sheet
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20 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
6
A
VGS = 4.5 V; Tamb = 25 °C
[1]
-
4.8
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
3
A
-
19
A
[2]
-
530
mW
[1]
-
1.24
W
-
4.46
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
1.2
A
Source-drain diode
IS
source current
[1]
[2]
Tamb = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
120
Pder
(%)
017aaa124
120
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
[1]
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMN30UNE
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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20 V, N-channel Trench MOSFET
aaa-020615
102
ID
(A)
tp =
10 µs
Limit RDSon = VDS/ID
10
100 µs
1
1 ms
10 ms
DC; Tsp = 25 °C
10-1
100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-1
1
10
VDS (V)
102
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
PMN30UNE
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9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
Min
Typ
Max
Unit
[1]
-
205
235
K/W
[2]
-
88
101
K/W
[2]
-
55
63
K/W
-
24
28
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-020616
103
Zth(j-a)
(K/W)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
duty cycle = 1
102
0.5
0.25
0.1
10
0.75
0.33
0.2
0.05
0.02
0
1
10-3
0.01
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN30UNE
Product data sheet
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20 V, N-channel Trench MOSFET
aaa-020617
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
10
0.75
0.33
0.2
0.1
0.05
0
1
10- 3
0.02
0.01
10- 2
10- 1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN30UNE
Product data sheet
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20 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS=VGS; Tj = 25 °C
0.4
0.65
0.9
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
2
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-2
µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
-
200
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
-
-200
nA
VGS = 4.5 V; ID = 4.8 A; Tj = 25 °C
-
28
36
mΩ
VGS = 4.5 V; ID = 4.8 A; Tj = 150 °C
-
43
55
mΩ
VGS = 2.5 V; ID = 4.2 A; Tj = 25 °C
-
38
47
mΩ
VGS = 1.8 V; ID = 0.9 A; Tj = 25 °C
-
42
60
mΩ
VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C
-
52
105
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 10 V; ID = 5 A; Tj = 25 °C
-
19
-
S
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
0.8
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 10 V; ID = 4.8 A; VGS = 4.5 V;
-
5.1
9
nC
QGS
gate-source charge
Tj = 25 °C
-
0.6
-
nC
QGD
gate-drain charge
-
0.9
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
558
-
pF
Coss
output capacitance
Tj = 25 °C
-
56
-
pF
Crss
reverse transfer
capacitance
-
45
-
pF
td(on)
turn-on delay time
VDS = 10 V; ID = 4.8 A; VGS = 4.5 V;
-
5.5
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
24
-
ns
td(off)
turn-off delay time
-
22
-
ns
tf
fall time
-
6
-
ns
PMN30UNE
Product data sheet
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20 V, N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IS = 1.2 A; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
Source-drain diode
VSD
source-drain voltage
aaa-020618
20
4.5 V
ID
(A)
VGS = 2 V
3V
aaa-009131
10-3
2.5 V
ID
(A)
15
1.8 V
min
10-4
typ
max
10
1.5 V
10-5
5
1.2 V
0
Fig. 6.
0
1
2
3
10-6
4
VDS (V)
0
0.2
0.4
0.6
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 7.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-020619
0.20
1.2 V
RDSon
(Ω)
1.5 V
RDSon
(Ω)
0.15
0.10
0.10
2.5 V
3V
0.05
aaa-020620
0.20
1.8 V
0.15
2.2 V
Tj = 150 °C
0.05
Tj = 25 °C
VGS = 4.5 V
0
0
5
10
15
ID (A)
0
20
Tj = 25 °C
Fig. 8.
0.8
1
VGS (V)
Product data sheet
1
2
3
4
VGS (V)
5
ID = 4.5 A
Drain-source on-state resistance as a function
of drain current; typical values
PMN30UNE
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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20 V, N-channel Trench MOSFET
aaa-020621
20
aaa-009135
2
a
ID
(A)
15
1.5
10
1
0.5
5
Tj = 150 °C
0
0
Tj = 25 °C
1
2
VGS (V)
0
-60
3
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-009136
1.5
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-020622
103
Ciss
VGS(th)
(V)
C
(pF)
1.0
Coss
102
max
typ
0.5
Crss
min
0
-60
0
60
120
Tj (°C)
10
10-1
180
ID = 0.25 mA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMN30UNE
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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20 V, N-channel Trench MOSFET
aaa-020623
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
1
0
QGS2
0
2
4
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
6
ID = 4.8 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-020624
5
IS
(A)
4
3
Tj = 150 °C
2
Tj = 25 °C
1
0
0.0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMN30UNE
Product data sheet
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20 V, N-channel Trench MOSFET
12. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.95
1.9
0.40
0.25
Dimensions in mm
0.26
0.10
14-10-03
Fig. 18. Package outline TSOP6 (SOT457)
13. Soldering
3.45
1.95
0.45 0.55
(6×) (6×)
0.95
solder lands
solder resist
3.3 2.825
0.95
solder paste
occupied area
0.7
(6×)
Dimensions in mm
0.8
(6×)
2.4
sot457_fr
Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)
PMN30UNE
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20 V, N-channel Trench MOSFET
5.3
1.5
(4×)
1.475
0.45
(2×)
5.05
1.475
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig. 20. Wave soldering footprint for TSOP6 (SOT457)
PMN30UNE
Product data sheet
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14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMN30UNE v.1
20160129
Product data sheet
-
-
PMN30UNE
Product data sheet
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or replacement of any products or rework charges) whether or not such
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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PMN30UNE
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product data given in the Limiting values and Characteristics sections of this
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMN30UNE
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PMN30UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 7
11
Test information ................................................... 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 11
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 January 2016
PMN30UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 January 2016
© NXP Semiconductors N.V. 2016. All rights reserved
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