Data Sheet

DF
N
20
20
MD
-6
PMPB12UNE
20 V, N-channel Trench MOSFET
12 April 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Low threshold voltage
Exposed drain pad for excellent thermal conduction
Tin-plated 100% solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 1 kV HBM
3. Applications
•
•
•
•
LED driver
Power management
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
11.4
A
-
12
16
mΩ
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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PMPB12UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
Graphic symbol
D
6
7
2
3
8
5
G
4
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PMPB12UNE
Description
Version
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin
small outline package; no leads; 6 terminals
SOT1220
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB12UNE
2Y
PMPB12UNE
Product data sheet
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20 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-12
12
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
11.4
A
VGS = 4.5 V; Tamb = 25 °C
[1]
-
7.9
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
5
A
-
32
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[2]
-
470
mW
Tamb = 25 °C; t ≤ 5 s
[1]
-
1.56
W
-
12.5
W
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
1.5
A
Source-drain diode
IS
source current
[1]
[2]
Tamb = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa123
120
Pder
(%)
017aaa124
120
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
[1]
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMPB12UNE
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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20 V, N-channel Trench MOSFET
aaa-022399
102
Limit RDSon = VDS/ID
ID
(A)
tp = 10 µs
10
100 µs
1 ms
1
DC; Tsp = 25 °C
10-1
10-2
10-1
Fig. 3.
10 ms
100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
1
10
VDS (V)
102
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
PMPB12UNE
Product data sheet
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20 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
Min
Typ
Max
Unit
[1]
-
230
265
K/W
[2]
-
70
80
K/W
[2]
-
34
39
K/W
-
5
10
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-022400
103
Zth(j-a)
(K/W)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
duty cycle = 1
0.75
102
0.33
0.20
0.50
0.25
0.10
10
0.05
0.01
0.02
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB12UNE
Product data sheet
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-022401
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.33
0.20
10
0.50
0.25
0.10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB12UNE
Product data sheet
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20 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS=VGS; Tj = 25 °C
0.4
0.65
0.9
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C
-
12
16
mΩ
VGS = 4.5 V; ID = 7.9 A; Tj = 150 °C
-
19
25
mΩ
VGS = 2.5 V; ID = 7.1 A; Tj = 25 °C
-
15
20
mΩ
VGS = 1.8 V; ID = 1.9 A; Tj = 25 °C
-
20
29
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 10 V; ID = 7.9 A; Tj = 25 °C
-
18
-
S
RG
gate resistance
f = 1 MHz
-
1.8
-
Ω
total gate charge
VDS = 10 V; ID = 6 A; VGS = 4.5 V;
-
10.9
17
nC
QGS
gate-source charge
Tj = 25 °C
-
1.3
-
nC
QGD
gate-drain charge
-
2.1
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
1220
-
pF
Coss
output capacitance
Tj = 25 °C
-
124
-
pF
Crss
reverse transfer
capacitance
-
102
-
pF
td(on)
turn-on delay time
VDS = 10 V; ID = 6 A; VGS = 4.5 V;
-
10
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
24
-
ns
td(off)
turn-off delay time
-
32
-
ns
tf
fall time
-
34
-
ns
-
0.7
1.2
V
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMPB12UNE
Product data sheet
IS = 1.5 A; VGS = 0 V; Tj = 25 °C
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20 V, N-channel Trench MOSFET
aaa-022402
35
ID
(A)
30
aaa-022403
10-3
4.5 V
ID
(A)
2.5 V
1.8 V
25
10-4
20
1.6 V
15
1.5 V
10
Fig. 6.
max
VGS = 1.4 V
5
0
typ
min
10-5
0
1
2
3
4
VDS (V)
10-6
5
0
0.2
0.4
0.6
0.8
1
VGS (V)
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-022404
80
1.4 V 1.5 V
RDSon
(mΩ)
1.6 V
aaa-022405
70
RDSon
(mΩ)
60
1.8 V
60
50
40
2.0 V
40
20
Tj = 150 °C
2.5 V
20
VGS = 4.5 V
10
20
0
0
8
16
24
ID (A)
0
32
Tj = 25 °C
Fig. 8.
Product data sheet
0
1
2
3
4
VGS (V)
5
ID = 5.7 A
Drain-source on-state resistance as a function
of drain current; typical values
PMPB12UNE
Tj = 25 °C
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-022406
30
aaa-022407
2.0
a
ID
(A)
1.5
20
1.0
Tj = 150 °C
10
0.5
Tj = 25 °C
0
0
1
2
VGS (V)
0
-60
3
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
VGS(th)
(V)
0.8
60
120
180
aaa-022409
104
max
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-022408
1.2
0
C
(pF)
typ
Ciss
103
min
0
-60
0
60
120
Tj (°C)
10
10-1
180
ID = 0.25 mA; VDS = VGS
Product data sheet
Crss
1
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMPB12UNE
Coss
102
0.4
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-022410
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
1
0
QGS2
0
2
4
6
8
QGS
QGD
QG(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
10
QG (nC)
ID = 6 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-022411
6
IS
(A)
4
Tj = 150 °C
2
Tj = 25 °C
0
0
4
8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMPB12UNE
Product data sheet
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20 V, N-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
E
A
X
D
A
A1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
Lp
E2
J1
D2 3
4
2
5
e
J
D1
bp (6×)
e
1
v
E1
0
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A1
bp
min
0.25
nom
max 0.65 0.04 0.35
D
D1
D2
E
E1
E2
1.9
1.0
0.2
1.9
1.1
0.51
2.1
1.2
0.3
2.1
1.3
0.61
e
J
J1
0.65 0.27 0.64
Lp
0.2
0.3
v
y
y1
0.1
0.05
0.1
Note
1. Dimension A is including plating thickness.
Outline
version
A B
6
pin 1
index area
mm
y
y1 C
sot1220_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
12-04-23
12-04-30
SOT1220
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
PMPB12UNE
Product data sheet
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20 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
PMPB12UNE
Product data sheet
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14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB12UNE v.1
20160412
Product data sheet
-
-
PMPB12UNE
Product data sheet
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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PMPB12UNE
Product data sheet
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMPB12UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved
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PMPB12UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 7
11
Test information ................................................... 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 April 2016
PMPB12UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved
16 / 16