Data Sheet

DF
N1
01
0D
-3
PMXB75UPE
20 V, P-channel Trench MOSFET
8 July 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
•
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
3. Applications
•
•
•
•
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-20
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
-2.9
A
-
69
85
mΩ
VGS = -4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = -4.5 V; ID = -2.9 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
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PMXB75UPE
NXP Semiconductors
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
4
D
drain
Simplified outline
Graphic symbol
D
1
4
3
G
2
S
Transparent top view
017aaa259
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PMXB75UPE
Name
Description
Version
DFN1010D-3
DFN1010D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
SOT1215
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMXB75UPE
00 01 00
MARKING CODE
(EXAMPLE)
READING
DIRECTION
YEAR DATE
CODE
VENDOR CODE
PIN 1
INDICATION MARK
MARK-FREE AREA
READING EXAMPLE:
11
01
10
Fig. 1.
aaa-008041
DFN1010D-3 (SOT1215) binary marking code description
PMXB75UPE
Product data sheet
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20 V, P-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-20
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-2.9
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-1.9
A
-
-12
A
[2]
-
317
mW
[1]
-
1070
mW
-
8330
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-1
A
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
017aaa123
120
017aaa124
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 2.
[1]
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMXB75UPE
Product data sheet
0
- 75
175
Fig. 3.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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PMXB75UPE
NXP Semiconductors
20 V, P-channel Trench MOSFET
aaa-010847
-102
ID
(A)
Limit RDSon = VDS/ID
tp = 10 µs
-10
tp = 100 µs
-1
tp = 1 ms
tp = 10 ms
DC; Tsp = 25 °C
-10-1
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
-10-2
-10-1
-1
-10
-102
VDS (V)
IDM = single pulse
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
PMXB75UPE
Product data sheet
Min
Typ
Max
Unit
[1]
-
271
312
K/W
[2]
-
102
117
K/W
-
10
15
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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PMXB75UPE
NXP Semiconductors
20 V, P-channel Trench MOSFET
aaa-008918
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0
0.01
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
aaa-008919
duty cycle = 1
0.75
0.5
0.33
Zth(j-a)
(K/W)
102
10
0.02
0.01
0
1
10-3
0.25
0.2
0.1
0.05
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 6.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMXB75UPE
Product data sheet
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20 V, P-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.4
-0.68
-1
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
IGSS
gate leakage current
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -4.5 V; ID = -2.9 A; Tj = 25 °C
-
69
85
mΩ
VGS = -4.5 V; ID = -2.9 A; Tj = 150 °C
-
99
122
mΩ
VGS = -2.5 V; ID = -2.6 A; Tj = 25 °C
-
86
110
mΩ
VGS = -1.8 V; ID = -0.4 A; Tj = 25 °C
-
130
200
mΩ
VGS = -1.5 V; ID = -50 mA; Tj = 25 °C
-
205
450
mΩ
VGS = -1.2 V; ID = -10 mA; Tj = 25 °C
-
950
-
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = -10 V; ID = -2 A; Tj = 25 °C
-
8.4
-
S
RG
gate resistance
f = 1 MHz
-
11.3
-
Ω
total gate charge
VDS = -10 V; ID = -2.9 A; VGS = -4.5 V;
-
6.8
12
nC
QGS
gate-source charge
Tj = 25 °C
-
0.9
-
nC
QGD
gate-drain charge
-
2.1
-
nC
Ciss
input capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
-
608
-
pF
Coss
output capacitance
Tj = 25 °C
-
75
-
pF
Crss
reverse transfer
capacitance
-
64
-
pF
td(on)
turn-on delay time
VDS = -10 V; ID = -2.9 A; VGS = -4.5 V;
-
6
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
19
-
ns
td(off)
turn-off delay time
-
29
-
ns
tf
fall time
-
15
-
ns
-
-0.7
-1.2
V
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMXB75UPE
Product data sheet
IS = -1 A; VGS = 0 V; Tj = 25 °C
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NXP Semiconductors
20 V, P-channel Trench MOSFET
aaa-010848
-12
-4.5 V
-3 V
VGS = -2.5 V
ID
(A)
ID
(A)
-2.2 V
-8
aaa-010849
-10-3
-10-4
min
typ
max
-1.8 V
-10-5
-4
-1.5 V
-1.2 V
0
Fig. 7.
0
-1
-2
-3
-10-6
-4
VDS (V)
0
-0.4
-0.8
VGS (V)
-1.2
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Output characteristics: drain current as a
Fig. 8.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-010850
0.5
-1.5 V
RDSon
(Ω)
aaa-010851
0.5
-1.8 V
RDSon
(Ω)
0.4
0.4
-2.2 V
0.3
0.3
-2.5 V
0.2
0.2
-3 V
0.1
Tj = 150 °C
0.1
VGS = -4.5 V
0
0
-4
-8
ID (A)
Tj = 25 °C
0
-12
Tj = 25 °C
Fig. 9.
Product data sheet
-1
-2
-3
-4
VGS (V)
-5
ID = -2.9 A
Drain-source on-state resistance as a function
of drain current; typical values
PMXB75UPE
0
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
20 V, P-channel Trench MOSFET
aaa-010852
-12
aaa-010853
2.0
a
ID
(A)
1.5
-8
1.0
Tj = 150 °C
-4
0.5
Tj = 25 °C
0
0
-1
-2
VGS (V)
0
-60
-3
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
Tj (°C)
180
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-010854
-1.5
0
aaa-010855
103
Ciss
VGS(th)
(V)
C
(pF)
max
-1.0
102
typ
Coss
-0.5
0
-60
min
0
60
Crss
120
Tj (°C)
10
-10-1
180
ID = -0.25 mA; VDS = VGS
Product data sheet
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
PMXB75UPE
-1
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMXB75UPE
NXP Semiconductors
20 V, P-channel Trench MOSFET
aaa-010856
-4.5
VDS
VGS
(V)
ID
-3.0
VGS(pl)
VGS(th)
VGS
-1.5
QGS1
QGS2
QGS
QGD
QG(tot)
017aaa137
0
0
2
4
6
QG (nC)
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
8
ID = -2.9 A; VDS = -10 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-010857
-5
IS
(A)
-4
-3
-2
Tj = 150 °C
-1
0
0
-0.4
Tj = 25 °C
-0.8
VSD (V)
-1.2
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 18. Duty cycle definition
PMXB75UPE
Product data sheet
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20 V, P-channel Trench MOSFET
12. Package outline
DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads;
3 terminals; body: 1.1 x 1.0 x 0.37 mm
SOT1215
visible depend upon
used manufacturing
technology (2x)
solderable lead
end, protrusion
max. 0.02 mm (3x)
pin 1
index area
visible depend upon
used manufacturing
technology (4x)
e
b (2x)
1
2
L (2x)
E
E1
e1
L1
D
A1
3
b1
A
D1
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
A
A1
b
b1
D
D1
E
E1
e
e1
min 0.34
0.22 0.245 1.05 0.87 0.95 0.16
nom 0.37
0.25 0.275 1.10 0.90 1.00 0.19 0.75
max 0.40 0.04 0.30 0.325 1.15 0.95 1.05 0.24
0.1
L
L1
0.17 0.195
0.20 0.225
0.25 0.275
Note
1. Dimension A is including plating thickness.
Outline
version
sot1215_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
13-03-05
13-03-06
SOT1215
Fig. 19. Package outline DFN1010D-3 (SOT1215)
PMXB75UPE
Product data sheet
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20 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.3
1.1
0.35 (2x)
0.4
0.25 (2x)
0.75
0.3
0.5
1.5
1.4
0.4
0.5
0.4
0.3
0.5
1.3
0.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
12-11-23
13-03-06
sot1215_fr
Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215)
PMXB75UPE
Product data sheet
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20 V, P-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMXB75UPE v.3
20140708
Product data sheet
-
PMXB75UPE v.2
Modifications:
•
PMXB75UPE v.2
20140218
Preliminary data sheet
-
PMXB75UPE v.1
PMXB75UPE v.1
20140204
Preliminary data sheet
-
-
PMXB75UPE
Product data sheet
Product status changed
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20 V, P-channel Trench MOSFET
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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Preview — The document is a preview version only. The document is still
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NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
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short data sheet, the full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
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Limited warranty and liability — Information in this document is believed
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or completeness of such information and shall have no liability for the
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PMXB75UPE
Product data sheet
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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NXP Semiconductors
20 V, P-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMXB75UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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PMXB75UPE
NXP Semiconductors
20 V, P-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 July 2014
PMXB75UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
15 / 15