SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (DMOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices. Very fast switching No secondary breakdown 3. Applications • • • • Relay driver High-speed line driver Load-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 200 V VGS gate-source voltage -20 - 20 V ID drain current - - 0.4 A - 1.6 3 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 0.4 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 D drain 3 G gate Simplified outline Graphic symbol D G 3 2 1 SOT89 S 017aaa253 6. Ordering information Table 3. Ordering information Type number BSS87 Package Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code BSS87 KA BSS87 Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 200 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 0.7 A VGS = 10 V; Tamb = 25 °C [1] - 0.4 A VGS = 10 V; Tamb = 100 °C [1] - 0.2 A - 1.6 A [2] - 0.58 W [1] - 1 W - 12.5 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.4 A Source-drain diode IS source current [1] [2] BSS87 Product data sheet Tamb = 25 °C [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 MOSFET transistor: Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 Tj (°C) 175 MOSFET transistor: Normalized continuous drain current as a function of junction temperature aaa-014573 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs tp = 100 µs 1 tp = 1 ms 10-1 tp = 10 ms DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-3 10-1 tp = 100 ms 1 10 102 VDS (V) 103 IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage BSS87 Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 190 216 K/W [2] - 105 125 K/W [2] - 36 42 K/W - 6 10 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-014574 103 Zth(j-a) (K/W) 102 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 1 10-3 0 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS87 Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor aaa-014575 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 10 0.5 0.25 0.1 0.05 0.01 1 10-3 0.02 0 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS87 Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 200 - - V VGSth gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C 0.8 - 2.8 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 200 nA VDS = 200 V; VGS = 0 V; Tj = 25 °C - - 60 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 10 V; ID = 0.4 A; Tj = 25 °C - 1.6 3 Ω VGS = 10 V; ID = 0.4 A; Tj = 150 °C - 3.7 7 Ω VGS = 4.5 V; ID = 0.3 A; Tj = 25 °C - 1.9 4 Ω VDS = 25 V; ID = 0.4 A; Tj = 25 °C - 0.8 - S IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge VDS = 50 V; ID = 0.25 A; VGS = 10 V; - 5.5 10 nC QGS gate-source charge Tj = 25 °C - 0.3 - nC QGD gate-drain charge - 1.4 - nC Ciss input capacitance VDS = 25 V; f = 1 MHz; VGS = 0 V; - 100 120 pF Coss output capacitance Tj = 25 °C - 20 30 pF Crss reverse transfer capacitance - 10 15 pF td(on) turn-on delay time VDS = 50 V; ID = 0.25 A; VGS = 10 V; - 2.7 6 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 3.7 6 ns td(off) turn-off delay time - 16.4 30 ns tf fall time - 7.5 20 ns - 0.8 1.2 V Source-drain diode VSD source-drain voltage BSS87 Product data sheet IS = 0.4 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor aaa-014576 1.6 VGS = 10 V ID (A) aaa-014577 10-3 4.5 V 3.5 V ID (A) 1.2 10-4 min 3V 0.8 typ max 10-5 0.4 2.5 V 2V 0 Fig. 6. 0 1 2 3 4 VDS (V) 10-6 5 0 1 2 VGS (V) 3 Tj = 25 °C Tj = 25 °C; VDS = 10 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-014578 6 2V RDSon (Ω) aaa-014579 6 2.5 V RDSon (Ω) 3V 4 4 3.5 V Tj = 150 °C 4V 4.5 V 2 2 VGS = 10 V 0 0 0.4 0.8 1.2 ID (A) Tj = 25 °C 0 1.6 Tj = 25 °C Fig. 8. Product data sheet 2 4 6 8 10 VGS (V) ID = 0.4 A Drain-source on-state resistance as a function of drain current; typical values BSS87 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor aaa-014580 1.6 aaa-014581 2.5 a ID (A) 2.0 1.2 1.5 0.8 1.0 0.4 0.5 Tj = 150 °C 0 0 1 Tj = 25 °C 2 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-014582 3 60 120 aaa-014583 102 Ciss Coss typ 1 10 Crss min 0 60 120 Tj (°C) 1 10-1 180 ID = 1 mA; VDS = VGS Product data sheet 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature BSS87 180 C (pF) 2 0 -60 Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 103 max VGS(th) (V) 0 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor aaa-014584 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 2 4 QG (nC) Fig. 15. MOSFET transistor: Gate charge waveform definitions 6 ID = 0.25 A; VDS = 50 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-014585 1.6 IS (A) 1.2 0.8 Tj = 150 °C 0.4 0 0 0.4 Tj = 25 °C 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition BSS87 Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor 12. Package outline Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 B D A bp3 E 1 2 HE Lp 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION REFERENCES IEC SOT89 JEDEC JEITA TO-243 SC-62 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 Fig. 18. Package outline SOT89 BSS87 Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor 13. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 occupied area 1.1 (2×) 1.5 solder paste Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 19. Reflow soldering footprint for SOT89 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 20. Wave soldering footprint for SOT89 BSS87 Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 16 BSS87 NXP Semiconductors 200 V, N-channel vertical D-MOS transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BSS87 v.5 20141209 Product data sheet - BSS87 v.4 Modifications: • BSS87 v.4 20140815 Product data sheet - BSS87 v.3 BSS87 v.3 20010518 Product specification - BSS87 v.2 BSS87 v.2 19970623 Product specification - BSS87 v.1 BSS87 Product data sheet Figure 3 corrected. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 December 2014 BSS87 Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 16 / 16