Data Sheet

SO
T8
9
BSS192
240 V, P-channel vertical D-MOS transistor
12 December 2014
Product data sheet
1. General description
P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (DMOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device
(SMD) plastic package.
2. Features and benefits
•
•
•
Direct interface to Complementary (C-MOS) transitor and Transistor-Transistor Logic
(TTL) devices
Very fast switching
No secondary breakdown
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-240
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
-200
mA
-
10
12
Ω
VGS = -10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = -10 V; ID = -200 mA; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 1 cm .
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
S
source
2
D
drain
3
G
gate
Simplified outline
Graphic symbol
D
G
3
2
1
SOT89
S
017aaa257
6. Ordering information
Table 3.
Ordering information
Type number
BSS192
Package
Name
Description
Version
SOT89
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4.
Marking codes
Type number
Marking code
BSS192
KB
BSS192
Product data sheet
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-240
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = -10 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-340
mA
VGS = -10 V; Tamb = 25 °C
[1]
-
-200
mA
VGS = -10 V; Tamb = 100 °C
[1]
-
-120
mA
-
-800
mA
[2]
-
560
mW
[1]
-
1
W
-
12.5
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-200
mA
Source-drain diode
IS
source current
BSS192
Product data sheet
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
0
- 75
175
MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
Fig. 2.
- 25
25
75
125
Tj (°C)
175
MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
aaa-014702
-1
tp = 100 µs
Limit RDSon = VDS/ID
ID
(A)
tp = 1 ms
tp = 10 ms
-10-1
tp = 100 ms
DC; Tsp = 25 °C
-10-2
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
-10-3
-10-1
-1
-10
-102
-103
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
BSS192
Product data sheet
t≤5s
All information provided in this document is subject to legal disclaimers.
12 December 2014
Min
Typ
Max
Unit
[1]
-
194
225
K/W
[2]
-
108
125
K/W
[2]
-
37
42
K/W
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
Symbol
Parameter
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
Min
Typ
Max
Unit
-
4
10
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-014703
103
Zth(j-a)
(K/W)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
duty cycle = 1
102
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-014704
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.01
0.02
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS192
Product data sheet
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -10 µA; VGS = 0 V; Tj = 25 °C
-240
-
-
V
VGSth
gate-source threshold
voltage
ID = -1 mA; VDS = VGS; Tj = 25 °C
-0.8
-
-2.8
V
IDSS
drain leakage current
VDS = -200 V; VGS = 0.2 V; Tj = 25 °C
-
-0.1
-60
µA
VDS = -60 V; VGS = 0 V; Tj = 25 °C
-
-
-200
nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = -10 V; ID = -200 mA; Tj = 25 °C
-
10
12
Ω
VGS = -10 V; ID = -200 mA; Tj = 150 °C
-
21
25
Ω
VGS = -4.5 V; ID = -100 mA; Tj = 25 °C
-
13
18
Ω
VDS = -10 V; ID = -200 mA; Tj = 25 °C
-
200
-
mS
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
VDS = -50 V; ID = -250 mA; VGS = -10 V;
-
1.9
5
nC
QGS
gate-source charge
Tj = 25 °C
-
0.3
-
nC
QGD
gate-drain charge
-
0.6
-
nC
Ciss
input capacitance
VDS = -25 V; f = 1 MHz; VGS = 0 V;
-
55
90
pF
Coss
output capacitance
Tj = 25 °C
-
20
30
pF
Crss
reverse transfer
capacitance
-
5
15
pF
td(on)
turn-on delay time
VDS = -50 V; ID = -250 mA; VGS = -10 V;
-
3.2
6
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
4.6
6
ns
td(off)
turn-off delay time
-
11.7
20
ns
tf
fall time
-
7
12
ns
-
0.86
1.2
V
Source-drain diode
VSD
source-drain voltage
BSS192
Product data sheet
IS = -200 mA; VGS = 0 V; Tj = 25 °C
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
aaa-014705
-1.0
VGS = -10 V
ID
(A)
-0.8
aaa-014706
-10-3
ID
(A)
-6 V
-10-4
-0.6
min
-5 V
-0.4
typ
max
-10-5
-4 V
-0.2
-3 V
0
Fig. 6.
0
-4
-8
-12
-10-6
-16
-20
VDS (V)
0
-1
-2
VGS (V)
-3
Tj = 25 °C
Tj = 25 °C; VDS = -10 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-014707
40
RDSon
aaa-014708
60
-4 V
RDSon
(Ω)
30
40
20
-5 V
Tj = 150 °C
20
10
VGS = -10 V
0
0
-0.2
-0.4
-0.6
Tj = 25 °C
-0.8
ID (A)
0
-1.0
Tj = 25 °C
Fig. 8.
Product data sheet
-2
-4
-6
-8
-10
VGS (V)
ID = -200 mA
Drain-source on-state resistance as a function
of drain current; typical values
BSS192
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
aaa-014709
-1.0
aaa-014710
2.5
ID
(A)
a
-0.8
2.0
Tj = 150 °C
-0.6
1.5
Tj = 25 °C
-0.4
1.0
-0.2
0.5
0
0
-2
-4
-6
-8
0
-60
-10
VGS (V)
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-014711
-3.2
VGS(th)
(V)
0
60
120
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-014712
103
max
Tj (°C)
C
(pF)
-2.4
102
Ciss
typ
-1.6
Coss
10
min
-0.8
Crss
0
-60
0
60
120
Tj (°C)
1
-10-1
180
ID = -1 mA; VDS = VGS
Product data sheet
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
BSS192
-1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
aaa-014713
-10
VDS
VGS
(V)
ID
-8
VGS(pl)
-6
VGS(th)
VGS
-4
QGS1
QGS2
QGS
-2
QGD
QG(tot)
017aaa137
0
0
0.5
1
1.5
QG (nC)
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
2
ID = -0.25 A; VDS = -50 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-014714
-1.0
IS
(A)
-0.8
Tj = 150 °C
-0.6
-0.4
-0.2
0
Tj = 25 °C
0
-0.4
-0.8
-1.2
VSD (V)
-1.6
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
BSS192
Product data sheet
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
12. Package outline
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
1
2
HE
Lp
3
c
bp2
w M B
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
SOT89
JEDEC
JEITA
TO-243
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
Fig. 18. Package outline SOT89
BSS192
Product data sheet
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
0.85
solder lands
1.7
1.2
4.6
solder resist
0.5
1
(3×)
4.85
occupied area
1.1
(2×)
1.5
solder paste
Dimensions in mm
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 19. Reflow soldering footprint for SOT89
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
(2×)
Dimensions in mm
preferred transport direction during soldering
1.9
1.5
(2×)
1.9
0.7
5.3
sot089_fw
Fig. 20. Wave soldering footprint for SOT89
BSS192
Product data sheet
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BSS192 v.4
20141212
Product data sheet
-
BSS192 v.3
Modifications:
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors
Legal texts have been adapted to the new company name where appropriate
BSS192 v.3
20021120
-
BSS192 v.2
BSS192 v.2
20020522
-
BSS192 v.1
BSS192 v.1
19970620
BSS192
Product data sheet
-
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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or completeness of such information and shall have no liability for the
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BSS192
Product data sheet
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product data given in the Limiting values and Characteristics sections of this
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
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Corporation.
BSS192
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
14 / 15
BSS192
NXP Semiconductors
240 V, P-channel vertical D-MOS transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 December 2014
BSS192
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
15 / 15