Data Sheet

SO
T4
57
PMN80XP
20 V, single P-channel Trench MOSFET
Rev. 1 — 8 May 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
 RDSon specified at 1.8 V operation
 Fast switching
 Trench MOSFET technology
1.3 Applications
 Relay driver
 High-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tamb = 25 °C
-
-
-20
V
VGS
gate-source voltage
-12
-
12
V
-
-
-3.2
A
-
80
102
mΩ
drain current
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
drain-source on-state
resistance
RDSon
[1]
VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
Simplified outline
Graphic symbol
6
5
4
1
2
3
D
G
SOT457 (TSOP6)
S
017aaa257
PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
PMN80XP
Name
Description
Version
TSOP6
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMN80XP
WA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tamb = 25 °C
-
-20
V
VGS
gate-source voltage
drain current
ID
peak drain current
IDM
total power dissipation
Ptot
-12
12
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-3.2
A
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-2.5
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-1.6
A
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-10
A
[2]
-
385
mW
[1]
-
925
mW
-
4000
mW
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-1
A
Source-drain diode
source current
IS
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMN80XP
Product data sheet
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Rev. 1 — 8 May 2012
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2 of 15
PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
017aaa123
120
017aaa124
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
Fig 1.
−25
25
75
125
0
−75
175
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
Fig 2.
−25
25
75
125
175
Tj (°C)
Normalized continuous drain current as a
function of junction temperature
017aaa528
-102
ID
(A)
Limit RDSon = VDS/ID
-10
(1)
-1
(2)
(3)
(4)
-10-1
(5)
(6)
-10-2
-10-1
-1
-10
VDS (V)
-102
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMN80XP
Product data sheet
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20 V, single P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance
from junction to
ambient
Rth(j-a)
in free air
Min
Typ
Max
Unit
[1]
-
281
325
K/W
[2]
-
116
135
K/W
[3]
-
73
85
K/W
-
27
31
K/W
thermal resistance
from junction to solder
point
Rth(j-sp)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s
017aaa529
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.02
0.01
0
1
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN80XP
Product data sheet
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Rev. 1 — 8 May 2012
© NXP B.V. 2012. All rights reserved.
4 of 15
PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
017aaa530
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.02
1
0.01
10-1
10-5
0
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, mounting pad for drain 6 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN80XP
Product data sheet
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Rev. 1 — 8 May 2012
© NXP B.V. 2012. All rights reserved.
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PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.45
-0.75
-1
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tamb = 150 °C
-
-
-10
µA
IGSS
gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C
-
80
102
mΩ
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
VGS = -4.5 V; ID = -2.5 A; Tj = 150 °C
-
116
148
mΩ
VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C
-
95
125
mΩ
VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C
-
120
156
mΩ
VDS = -10 V; ID = -2.5 A; Tj = 25 °C
-
15
-
S
VDS = -10 V; ID = -2.5 A; VGS = -4.5 V;
Tj = 25 °C
-
5
7.5
nC
-
0.7
-
nC
-
0.9
-
nC
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
550
-
pF
-
63
-
pF
-
53
-
pF
-
6
-
ns
-
14
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
120
-
ns
tf
fall time
-
50
-
ns
-
-0.8
-1.2
V
VDS = -10 V; ID = -2.5 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
PMN80XP
Product data sheet
IS = -1.0 A; VGS = 0 V; Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 May 2012
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PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
017aaa531
-10
-10 V
ID
(A)
-8
VGS = -1.8 V
-2 V
-4.5 V
017aaa532
-10-3
ID
(A)
-2.5 V
-1.6 V
min
-6
typ
max
-10-4
-1.5 V
-4
-1.4 V
-2
-1.2 V
-1 V
0
0
-1
-2
-3
VDS (V)
-10-5
-4
Tj = 25 °C
Fig 6.
-0.25
-0.50
-0.75
-1.00
VGS (V)
Tj = 25 °C; VDS = -5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
017aaa533
0.25
-1.3 V
RDSon
(Ω)
0
Sub-threshold drain current as a function of
gate-source voltage
017aaa534
0.4
VGS = -1.4 V
RDSon
(Ω)
0.20
-1.6 V
0.15
0.3
-1.8 V
0.2
-2.5 V
-4.5 V
0.10
Tj = 25 °C
0.1
Tj = 150 °C
0.05
0
0
-1
-2
-3
ID (A)
0
-4
Tj = 25 °C
Fig 8.
Product data sheet
-1
-2
-3
VGS (V)
-4
ID = -3 A
Drain-source on-state resistance as a function
of drain current; typical values
PMN80XP
0
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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Rev. 1 — 8 May 2012
© NXP B.V. 2012. All rights reserved.
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PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
017aaa535
-10
017aaa536
2.0
ID
(A)
a
-8
1.5
-6
1.0
-4
0.5
-2
Tj = 150 °C
0
0
-0.5
Tj = 25 °C
-1.0
-1.5
0
-60
-2.0
-2.5
VGS (V)
0
60
120
Tj (°C)
180
VDS > ID × RDSon
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa537
-2.0
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa538
103
VGS(th)
(V)
Ciss
-1.5
C
(pF)
max
102
-1.0
typ
Coss
min
-0.5
Crss
0
-60
0
60
120
Tj (°C)
180
10
-10-1
ID = -0.25 mA; VDS = VGS
Product data sheet
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PMN80XP
-1
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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© NXP B.V. 2012. All rights reserved.
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PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
017aaa539
-12
VDS
VGS
(V)
ID
-8
VGS(pl)
VGS(th)
VGS
-4
QGS1
QGS2
QGS
QGD
QG(tot)
017aaa137
0
0
3
6
9
QG (nC)
12
ID = -3 A; VDS = -10 V; Tamb = 25 °C
Fig 14. Gate charge waveform definitions
Fig 15. Gate charge waveform definitions
017aaa540
-4
IS
(A)
-3
-2
-1
0
Tj = 150 °C
0
-0.4
Tj = 25 °C
-0.8
-1.2
VDS (V)
-1.4
VGS = 0 V
Fig 16. Source current as a function of source-drain voltage; typical values
PMN80XP
Product data sheet
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Rev. 1 — 8 May 2012
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PMN80XP
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20 V, single P-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 17. Duty cycle definition
9. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.40
0.25
0.95
0.26
0.10
1.9
Dimensions in mm
04-11-08
Fig 18. Package outline SOT457 (TSOP6)
PMN80XP
Product data sheet
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20 V, single P-channel Trench MOSFET
10. Soldering
3.45
1.95
0.45 0.55
(6×) (6×)
0.95
solder lands
solder resist
3.3 2.825
0.95
solder paste
occupied area
0.7
(6×)
Dimensions in mm
0.8
(6×)
2.4
sot457_fr
Fig 19. Reflow soldering footprint for SOT457 (TSOP6)
5.3
1.5
(4×)
solder lands
1.475
0.45
(2×)
5.05
solder resist
occupied area
1.475
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig 20. Wave soldering footprint for SOT457 (TSOP6)
PMN80XP
Product data sheet
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Rev. 1 — 8 May 2012
© NXP B.V. 2012. All rights reserved.
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PMN80XP
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20 V, single P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMN80XP v.1
20120508
Product data sheet
-
-
PMN80XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 May 2012
© NXP B.V. 2012. All rights reserved.
12 of 15
PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
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Short data sheet — A short data sheet is an extract from a full data sheet
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for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
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PMN80XP
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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PMN80XP
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20 V, single P-channel Trench MOSFET
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13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
PMN80XP
Product data sheet
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PMN80XP
NXP Semiconductors
20 V, single P-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .1
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information . . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 May 2012
Document identifier: PMN80XP