SO T2 3 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Rev. 1 — 30 March 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 5.2 A - 17 22 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 5.2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S mbb076 SOT23 (TO-236AB) 3. Ordering information Table 3. Ordering information Type number Package PMV22EN Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 30 V VGS gate-source voltage ID drain current peak drain current IDM total power dissipation Ptot -20 20 V VGS = 10 V; Tamb = 25 °C [1] - 5.2 A VGS = 10 V; Tamb = 100 °C [1] - 3.3 A Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C - 20 A [2] - 510 mW [1] - 930 mW - 4170 mW - 150 °C Tsp = 25 °C Tj junction temperature Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 930 mA Source-drain diode source current IS Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMV22EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 017aaa001 120 Pder (%) 017aaa002 120 Ider (%) 80 80 40 40 0 −75 Fig 1. −25 25 75 0 −75 125 175 Tamb (°C) Normalized total power dissipation as a function of ambient temperature Fig 2. −25 25 75 125 175 Tamb (°C) Normalized continuous drain current as a function of ambient temperature 017aaa152 102 ID (A) Limit RDSon = VDS/ID 10 (1) (2) 1 (3) (4) (5) 10–1 (6) 10–2 10–1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMV22EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 207 245 K/W [2] - 116 135 K/W - 20 30 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 017aaa153 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 10 0.02 0 0.01 1 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa154 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.1 10 0.33 0.2 0.05 0.02 0 1 10–3 0.01 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV22EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tamb = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tamb = 150 °C - - 10 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 5.2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C - 17 22 mΩ VGS = 10 V; ID = 5.2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 150 °C - 27 34 mΩ VGS = 4.5 V; ID = 4.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C - 22 29 mΩ VDS = 5 V; ID = 3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C - 12 - S ID = 3 A; VDS = 15 V; VGS = 10 V; Tj = 25 °C - 8.6 13 nC - 1.2 - nC - 1.3 - nC - 480 - pF - 110 - pF - 52 - pF - 4 - ns RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = 3 A tr rise time - 15 - ns td(off) turn-off delay time - 100 - ns tf fall time - 40 - ns - 0.72 1.2 V Source-drain diode VSD source-drain voltage PMV22EN Product data sheet IS = 0.93 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 017aaa155 16 ID (A) 10 V 12 3V 017aaa156 10–3 ID (A) VGS = 2.8 V 4.5 V 10–4 (1) (2) (3) 8 2.5 V 10–5 4 0 2.3 V 0 1 2 3 VDS (V) 4 10–6 0.0 Tj = 25 °C 1.0 2.0 VGS (V) 3.0 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa157 80 RDSon (mΩ) (1) (2) Sub-threshold drain current as a function of gate-source voltage 017aaa158 80 RDSon (mΩ) (3) 60 60 40 40 (4) (1) (5) 20 20 (2) (6) 0 2 4 6 8 10 12 14 ID (A) 0 16 2 4 Tj = 25 °C ID = 5.3 A (1) VGS = 2.5 V (1) Tj = 150 °C (2) VGS = 2.6 V (2) Tj = 25 °C 6 8 VGS (V) 10 (3) VGS = 2.8 V (4) VGS = 3.0 V (5) VGS = 4.5 V (6) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values PMV22EN Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 017aaa159 20 (1) ID (A) 017aaa160 1.8 (2) a 16 1.4 12 8 (2) (1) 1.0 4 0 0 1 2 3 VGS (V) 4 0.6 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa161 3 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa162 103 (1) VGS(th) (V) (1) C (pF) 2 (2) (2) 102 (3) 1 (3) 0 –60 0 60 120 Tj (°C) 180 10 10–1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature PMV22EN Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 017aaa163 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 3 6 QG (nC) 9 ID = 3 A; VDS = 15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa164 4 IS (A) 3 (1) (2) 2 1 0 0.0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMV22EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 7. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig 17. Package outline SOT23 (TO-236AB) PMV22EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 8. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 18. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 19. Wave soldering footprint for SOT23 (TO-236AB) PMV22EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV22EN v.1 20110330 Product data sheet - - PMV22EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 10. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMV22EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 March 2011 Document identifier: PMV22EN