CURB201-G

SMD Ultra Fast Recovery Rectifiers
CURB201-G Thru. CURB207-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
DO-214AA (SMB)
-Ideal for surface mount applications.
-Easy pick and place.
0.185(4.70)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
-Fast recovery time: 50~75nS.
-Low leakage current.
Mechanical data
0.220(5.59)
0.200(5.08)
-Case: JEDEC DO-214AA, molded plastic.
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Symbol
CURB
201-G
CURB
202-G
CURB
203-G
CURB
204-G
CURB
205-G
CURB
206-G
CURB
207-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Max. DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Max. RMS voltage
VRMS
35
70
140
280
420
560
700
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
50
A
IO
2.0
A
Parameter
Max. average forward current
Max. instantaneous forward
2.0A
voltage at
Trr
Reverse recovery time
Max. DC reverse current at TA=25
rated DC blocking voltage TA=125
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
VF
O
C
C
O
1.3
1.0
50
1.7
V
75
nS
IR
5.0
100
RθJL
20
TJ
150
O
C
TSTG
-55 to +150
O
C
μA
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm square2 (0.13mm thick) land area.
REV:A
Page 1
QW-BU003
Comchip Technology CO., LTD.
SMD Ultra Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CURB201-G thru CURB207-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
10
CURB201-G~203-G
O
TJ=125 C
1
F o r w a rd C u rren t(A)
Rever s e C urr e n t (μA )
100
10
TJ=25 OC
1
CURB204-G
0.1
CURB205-G~207-G
0.01
O
TJ=25 C
Pulse width 300μS
4% duty cycle
0.1
0.001
0
20
40
60
80
100
120
0
140
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
200
60
Peak F or ward Surge C ur re nt A
( )
TJ=25 OC
f=1MHz
Vsig=50mVp-p
100
J u n c ti o n C apacian
t ce(p F )
0.2
10
O
TJ=25 C
8.3ms single half sine
wave, JEDEC method
50
40
30
20
10
0
1
0.1
1
10
100
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
2.8
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
2.4
2.0
1.6
1.2
Single phase
Half wave 60Hz
0.8
0.4
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
Ambient Temperature (
150
O
175
C)
REV:A
Page 2
QW-BU003
Comchip Technology CO., LTD.
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