CEF860LT-G

Comchip
Efficient Fast Recovery Rectifiers
SMD Diode Specialist
CEF860LT-G
Reverse Voltage: 600 V
Forward Current: 8.0 A
RoHS Device
Features
TO-220AC
-Soft recovery characteristic.
0.108
(2.75)
-Low forward voltage.
-Low recovery loss.
0.413(10.50)
0.374( 9.50)
0.153(3.90)
0.146(3.70)
0.187(4.70)
0.148(3.80)
0.055(1.40)
0.047(1.20)
0.270(6.90)
0.230(5.80)
-High surge current capability.
0.610(15.50)
0.583(14.80)
Mechanical Data
0.04 MAX
(1.0)
-Case: TO-220AC, molded plastic.
-Epoxy: UL 94V-0 rate flame retardant.
0.051
(1.30)
0.157
(4.0)
0.583(14.80)
0.531(13.50)
-Polarity: As marked on the body.
-Mounting position: Any
0.043(1.10)
0.032(0.80)
-Weight: 2.14 grams
0.102(2.60)
0.091(2.30)
0.024(0.60)
0.012(0.30)
0.126
(3.20)
Dimensions in inches and (millimeter)
Maximun Ratings (at T =25°C unless otherwise noted)
J
Parameter
Repetitive Peak Reverse Voltage
Symbol
CEF860LT-G
Unit
VRRM
600
V
Average Rectified Forward Current
@ TJ= 110°C
IF(AV)
8
A
Non-Repetitive Surge Forward Current
TP = 10ms(50HZ) Sine Wave
@ TJ= 25°C
IFSM
125
A
Avalanche Energy with Single Pulse ( L=40mH )
EAS
60
mJ
Maximum Power Dissipation
PD
54
W
Junction-to-Case Thermal Resistance, Per Leg
RθJC
2.3
°C/W
Junction-to Ambient Thermal Resistance, Per Leg
RθJA
70
°C/W
TJ, TSTG
-55 to +150
°C
Operating Junction and Storage Temperatures
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Comchip Technology CO., LTD.
Comchip
Efficient Fast Recovery Rectifiers
SMD Diode Specialist
Electrical Characteristics and Curves (at T =25°C unless otherwise noted)
J
Symbol
MIN.
IR = 100μA
VBR
600
IF = 8A
VF
1.3
1.7
V
IF = 8A , TJ = 125°C
VF
1.1
1.5
V
VR = 600V
IR
10
μA
VR = 600V , TJ = 125°C
IR
250
μA
TYP.
MAX.
Unit
trr
24
30
ns
trr
32
ns
IRRM
4.2
A
Qrr
67
nC
trr
65
ns
IRRM
6.2
A
Qrr
201
nC
Parameter
Breakdown Voltage
Conditions
TYP.
MAX.
Unit
V
Forward Voltage
Reverse Leakage Current
Dynamic Recovery Characteristics
Parameter
Reverse Recovery Time
Conditions
IF = 1A , VR = 30V , dIF/dt = -200A/μs
Reverse Recovery Time
Peak Recovery Current
dIF/dt = -200A/μs
Reverse Recovery Time
Reverse Recovery Charge
MIN.
IF = 8A , VR = 300V
Reverse Recovery Charge
Peak Recovery Current
Symbol
IF = 8A , VR = 300V
dIF/dt = -200A/μs , TJ=125°C
REV:A
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Comchip Technology CO., LTD.
Comchip
Efficient Fast Recovery Rectifiers
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES ( CEF860LT-G )
FIG.1 - Average Forward Current vs.
Max. Allowable Cace Temperature
FIG.2 - Typical Junction Capacitance
vs. Reverse Voltage
Average Forward Current, ( A )
10
100
Junction Capacitance, (pF)
8
6
4
2
10
Square Wave (D=0.5)
Rated VR Applied
0
0
100
110
120
130
140
150
160
0
100
200
300
400
500
Case Temperature, (°C)
Reverse Voltage, (V)
FIG.3 - Typical Value of Reverse Current
vs. Reverse Voltage
FIG.4 - Typical Forward Voltage
Drop Characteristics
600
30
100
10
TJ=125°C
1
TJ=100°C
25
TJ=125°C
Forward Current, ( A )
Reverse Current, (μA)
TJ=150°C
0.1
20
15
10
TJ=25°C
0.01
5
TJ=25°C
0
0.001
0
100
200
300
400
500
600
0
Reverse Voltage, (V)
0.5
1
1.5
2
2.5
Forward Voltage Drop Voltage, ( V )
REV:A
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Comchip Technology CO., LTD.
Comchip
Efficient Fast Recovery Rectifiers
SMD Diode Specialist
Marking Code
Part Number
Marking code
CEF860LT-G
8LFR060T
C
8LFR060T
C = Compchip Logo
Standard Packaging
TUBE PACK
Case Type
TO-220AC
TUBE
BOX
( pcs )
( pcs )
50
2,000
REV:A
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Comchip Technology CO., LTD.
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