CDSV16-G

SMD Switching Diode
CDSV16-G
RoHS Device
Features
SOD-323
-Fast Switching Speed
-Electrically Identical to Standard JEDEC
0.071 (1.80)
0.063 (1.60)
-High Conductance
-Surface Mount Package Ideally Suited for
0.014 (0.35)
0.010 (0.25)
0.055 (1.40)
0.047 (1.20)
Automatic Insertion
-Flat Package SOD-123 in Stead mini-MELF
0.106 (2.70)
0.098 (2.50)
Package
Mechanical data
0.006 (0.15)
0.003 (0.08)
0.039 (1.00)max
-Case: SOD-323, Molded Plastic
0.004 (0.10)max
0.019 (0.475)REF.
-Terminals: Solderable per MIL-STD-202, Method
208
-Weight: 0.01 gram(approx.)
Dimensions in inches and (millimeters)
Maximum Rating (at Ta=25°C unless otherwise noted)
Conditions
Parameter
Min
Symbol
Max
Unit
Non-Repetitive peak reverse voltage
VRM
100
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
75
V
VR(RMS)
53
V
IFM
300
mA
Io
150
mA
IFSM
2
1
A
PD
200
RMS reverse voltage
Forward continuous current
Average rectified output current
TP = 1uS
TP = 1S
Peak forward surge current
Power dissipation
Thermal Resistance (Junction to ambient)
R
Storage temperature
TSTG
Junction temperature
mW
O
C/W
625
JA
-65
Tj
+150
O
+125
O
C
C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
IF = 1 mA DC
IF = 10mA DC
IF = 50mA DC
IF =150mA DC
VF
0.715
0.855
1.0
1.25
V
Forward voltage
Reverse current
VR = 20 V
VR = 75 V
IR
25
1
nA
uA
Capacitance between terminals
f = 1 MHZ,and 0VDC reverse voltage
CT
2
PF
Reverse recovery time
IF = IR=10 mA, RL =100 ohms, Irr = 0.1 X IR
TRR
4
nS
REV:A
QW-B0027
Page 1
SMD Switching Diode
Typical Characteristics (CDSV16-G)
Fig.2 - Leakage current V.S. Junction Temperature
Fig.1 - Forward Characteristics
10,000
100
1,000
IR, Leakage Current (nA)
IF, Instantaneous Forward Current (mA)
1000
10
1
100
10
0.1
VR=20V
1
0.01
0
1
V F, Instantaneous Forward Voltage (V)
2
0
100
200
o
Tj, Junction TemperatureC)(
REV:A
QW-B0027
Page 2