Multi Chip Transistor MMDT3906-HF (PNP+PNP) RoHS Device Halogen Free Features SOT-363 - Epitaxial planar die construction. - Dual Transistor. - Ideal for low power amplification and switching. 0.087(2.20) 0.079(2.00) - Ultra small surface mount package. 6 5 4 1 2 3 0.053(1.35) 0.045(1.15) Mechanical data 0.055(1.40) 0.047(1.20) - Case: SOT-363 Standard package, molded plastic. 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.096(2.45) 0.085(2.15) - Terminals: Solderable per MIL-STD-750, method 2026. 0.014(0.35) 0.006(0.15) - Mounting position: Any. 0.004(0.10)max 0.018(0.46) 0.010(0.26) - Weight: 0.0078 grams(approx.). Dimensions in inches and (millimeter) Diagram: - 1,4 : Emitter - 2,5 : Base - 3,6 : Collector C2 B1 E1 E2 B2 C1 Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -0.2 A Collector power dissipation PC 0.2 W RΘJA 625 °C/W Junction temperature range TJ 150 °C Storage temperature range TSTG -55 to +150 °C Parameter Thermal resistance (Junction to ambient air) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR23 Page 1 Comchip Technology CO., LTD. Multi Chip Transistor Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Min Max Unit Collector-Base breakdown voltage IC=-10μA , IE=0 V(BR)CBO -40 V Collector-Emitter breakdown voltage IC=-1mA , IB=0 V(BR)CEO -40 V Emitter-Base breakdown voltage IE=-10μA , IC=0 V(BR)EBO -5 V Collector cut-off current VCE=-30V , VEB(OFF)=-3V Base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency ICEX -50 nA VEB=-5V , IC=0 IEBO -50 nA VCE=-1V , IC=-0.1mA hFE(1) 60 VCE=-1V , IC=-1mA hFE(2) 80 VCE=-1V , IC=-10mA hFE(3) 100 VCE=-1V , IC=-50mA hFE(4) 60 VCE=-1V , IC=-100mA hFE(5) 30 IC=-10mA , IB=-1mA VCE(sat)1 IC=-50mA , IB=-5mA VCE(sat)2 IC=-10mA , IB=-1mA VBE(sat)1 IC=-50mA , IB=-5mA VBE(sat)2 VCE=-20V , IC=-10mA , f=100MHz 300 -0.65 -0.25 V -0.40 V -0.85 V -0.95 250 fT V MHz Collector output capacitance VCB=-5V , IE=0, f=1MHz Cob 4.5 pF Noise figure VCE=-5V , IC=-0.1mA, f=1KHz , Rg=1KΩ NF 4 dB td 35 nS tr 35 nS ts 225 nS tf 75 nS Delay time VCC=-3V , VBE(off)=0.5V IC=-10mA , IB1=-IB2=-1mA Rise time Storage time VCC=-3V , IC=-10mA IB1=-IB2=-1mA Fall time RATING AND CHARACTERISTIC CURVES (MMDT3906-HF) Fig.1 - Static Characteristic Fig.2 - hFE— IC 300 -100 -80 COMMON EMITTER VCE=-1V Ta=25°C -500uA -450uA Ta=100°C DC Current Gain, hFE Collector Current, Ic (mA) COMMON -500uA EMITTER -450uA -400uA -350uA -60 -300uA -250uA -200uA -40 -150uA -100uA -20 200 Ta= 25°C 100 IB=-50uA 0 0 -4 -8 -12 -16 -20 0 -0.1 Collector-Emitter Voltage, VCE (V) -1 -10 -100 -200 Collector Current , Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR23 Page 2 Comchip Technology CO., LTD. Multi Chip Transistor RATING AND CHARACTERISTIC CURVES (MMDT3906-HF) Fig.4 - VBEsat — IC Fig.3 - VCEsat — IC -1.2 -300 Ta=100°C -100 Ta=25°C -30 Ta= 25°C -0.8 Ta=100°C VBEsat (V) BASE-Emitter Saturation Voltage, VCEsat (mV) Collector-Emitter Saturation Voltage, -500 -0.4 ß=10 ß=10 0 -10 -1 -10 -100 -200 -10 -1 -100 Collector Current , Ic (mA) Collector Current, Ic (mA) Fig.5 - IC — VEB Fig.6 - Cob/Cib - VCB/VEB -100 9 COMMON -500uA EMITTER -450uA -200 f=1MHZ I-450uA E=0/IC=0 Ta=25°C VCE=-1V Capacitance, C (pF) Collector Current, IC ( mA) Cob Ta= 100°C -10 Ta= 25°C -1 -0.1 -0.2 -0.4 -0.6 -0.8 1 -0.1 -1.2 -1.0 -10 Reverse Voltage , V (V) Fig.7 - fT — IC Fig.8 - PC — Ta -20 350 Collector Power Dissipation, Pc (mW) VCE=20V T-450uA a=25°C 400 200 -1 3 Base-Emitter Voltage , VBE ( V ) 600 Transition Frequency, fT (MHZ) -1.0 Cib 200 150 100 50 0 -10 -50 0 Collector Current , IC (mA) 25 50 75 100 125 150 Ambient Temperature , Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR23 Page 3 Comchip Technology CO., LTD. Multi Chip Transistor Reel Taping Specification P1 W B F E d P0 C A P 12 o 0 D2 D1 D W1 SYMBOL SOT-363 SOT-363 A B C d D D1 D2 1.20 ± 0.10 1.50 + 0.10 - 0.00 178.00 ± 1.00 54.40 ± 0.40 13.00 ± 1.00 0.059 + 0.004 - 0.000 7.008 ± 0.039 2.142 ± 0.016 0.512 ± 0.039 (mm) 2.25 ± 0.10 (inch) 0.089 ± 0.004 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 - 0.004 0.484 ± 0.039 2.55 ± 0.10 0.100 ± 0.004 0.047 ± 0.004 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR23 Page 4 Comchip Technology CO., LTD. Multi Chip Transistor Marking Code 6 Part Number Marking Code MMDT3906-HF . K3N . 5 4 K3N 1 2 3 Suggested PAD Layout C SOT-363 SIZE (mm) (inch) A 0.40 0.016 B 0.80 0.031 C 0.65 0.026 D 1.94 0.076 D B A Standard Packaging REEL PACK Case Type SOT-363 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR23 Page 5 Comchip Technology CO., LTD.