CDSH3-222N-G

Small Signal Switching Diodes
CDSH3-222N-G/222P-G
Reverse Voltage: 80 Volts
Power Dissipation: 150 mW
RoHS Device
Features
SOT-523
-Design for mounting on small surface.
0.067(1.70)
0.059(1.50)
-High speed switching.
3
-High mounting capability, strong surge
withstand, high reliability.
0.033(0.85)
0.030(0.75)
1
Mechanical data
2
0.043(1.10)
0.035(0.90)
0.008(0.20)
0.004(0.10)
-Case: SOT-523, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
0.069(1.75)
0.057(1.45)
0.031(0.80)
0.024(0.60)
-Approx. weight: 0.002 grams
0.004(0.10)max.
0.012(0.30)
0.006(0.15)
Circuit diagram
3
0.004(0.10)min.
3
Dimensions in inches and (millimeter)
1
2
CDSH3-222N-G
1
2
CDSH3-222P-G
Maximum Ratings and Electrical Characteristics
(at Ta=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Symbol
Conditions
Value
Units
VRRM
80
V
Reverse voltage
VR
80
V
Peak forward current
IF
300
mA
4
A
150
mW
Peak surge forward current
IFSM
Power dissipation
PD
Maximum forward voltage
VF
@IF=100mA
1.2
V
Maximum reverse current
IR
@VR=70V
0.1
μA
Maximum reverse recovery time
Trr
IF=IR=5mA, RL=100Ω
4
nS
Maximum diode capacitance
CJ
VR=6V, f=1.0MHz
3.5
pF
Maximum junction temperature
TJ
150
O
C
TSTG
-55 to +150
O
C
Storage temperature
T=1.0 sec
REV:A
Page 1
QW-B0011
Comchip Technology CO., LTD.
Small Signal Switching Diodes
RATING AND CHARACTERISTIC CURVES (CDSH3-222N-G/222P-G)
Fig.1 - Forward Characteristics
(P type)
Fig.2 - Reverse Characteristics
(P type)
100
1μ
O
TA=100 C
100n
Reverse Current, (A)
F o r w a r d C u r rent, ( mA)
O
TA=85 C
10
O
TA=30 C
O
TA=-30 C
O
TA=0 C
O
TA=25 C
1
O
TA=75 C
O
TA=50 C
10n
O
TA=25 C
O
TA=0 C
1n
O
TA=-25 C
0.1n
0.1
0.01n
0
0.4
0.8
1.2
1.6
10
0
20
40
30
Forward Voltage, (V)
Reverse Voltage, (V)
Fig.3 - Forward Characteristics
(N type)
Fig.4 - Reverse Characteristics
(N type)
100
50
1m
O
TA=100 C
100μ
Reverse Current, (A)
For w ard Current, (mA)
O
TA=75 C
TA=85 OC
10
TA=-30 OC
TA=30 OC
TA=0 OC
TA=25 OC
1
O
10μ
TA=50 C
O
TA=25 C
1μ
TA=0 OC
100n
TA=-25 OC
10n
0.1
1n
0
0.4
0.8
1.2
1.6
60
40
80
Forward Voltage, (V)
Reverse Voltage, (V)
Fig.5 - Capacitance Between Terminals
Characteristics
Fig.6 - Power Derating Curve
4
200
O
TJ=25 C
f=1MHz
P o we r Dis s ip at i on P D/P D M a x ., (%)
Ca p a c it a n c e B e t w e e n Te rminal s, ( p F )
20
0
3
2
P Type
N Type
1
Mounted on glass
epoxy PCBs
150
100
50
0
0
0
4
8
12
16
20
0
25
50
75
100
125
150
175
Ambient Temperature, (°C)
Reverse Voltage, (V)
REV:A
Page 2
QW-B0011
Comchip Technology CO., LTD.
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