CDSH6-16-G

SMD Switching Diode
CDSH6-16-G
RoHS Device
Features
SOT-563
-Fast Switching Speed
0.067(1.70)
0.059(1.50)
-For general purpose switching applications.
-High conductance.
0.051(1.30)
0.043(1.10)
Mechanical data
-Case: SOT-563, Molded Plastic
0.022(0.55)
0.018(0.45)
-Terminals: Solderable per MIL-STD-202, Method
208
0.024(0.60)
0.021(0.52)
0.006(0.16)
0.004(0.09)
0.067(1.70)
0.059(1.50)
Marking: KAM
Circuit diagram
C1
NC
A2
A1
NC
C2
0.011(0.27)
0.007(0.17)
0.012(0.30)
0.004(0.10)
0.002(0.05)max
Dimensions in inches and (millimeters)
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Max
Unit
Non-repetitive peak reverse voltage
VRM
100
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
75
V
VR(RMS)
53
V
Forward continuous current
IFM
300
mA
Averaged rectified output current
IO
200
mA
IFSM
2
1
A
PD
150
mW
RθJA
833
TJ
150
O
C
-65 to +150
O
C
Parameter
RMS reverse voltage
Peak forward surge current
@t=1.0μs
@T=1.0s
Power dissipation
Thermal resistance, junction to air
Junction temperature
Storage temperature
TSTG
O
C/W
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Unit
Min
Max
75
A
V
IR
1
25
μA
nA
V
Reverse breakdown voltage
IR=100μA
VBR
Reverse voltage leakage current
VR=75V
VR=20V
Forward voltage
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VF
0.715
0.855
1
1.25
Diode capacitance
VR=0V, f=1MHz
CT
2
pF
Reverse recovery time
IF=IR=10mA, Irr=0.1×IR, RL=100Ω
trr
4
nS
REV:B
Page 1
QW-B0042
Comchip Technology CO., LTD.
SMD Switching Diode
Typical Characteristics (CDSH6-16-G)
Fig.1 - Forward Power Derating Curve
Fig.2 - Typical Forward Characteristics
1
IF, Instantaneous Forward Current (A)
PD, Power Dissipation (mW)
250
200
150
100
50
0
0
50
100
150
O
TA=150 C
0.1
O
TA=75 C
TA=25 OC
O
TA=0 C
0.01
TA=-40 OC
0.001
0
200
0.5
1.5
1
TA, Ambient Temperature (°C)
VF, Instantaneous Forward Voltage (V)
Fig.3 - Typical Diode Capacitance
Characteristics
Fig.4 - Typical Reverse Current
Characteristics
2.0
10000
TA=150 OC
O
TA=125 OC
1.6
IR, Reverse Current (nA)
CT, Diode Capacitance (pF)
TJ=25 C
f=1MHz
1.2
0.8
0.4
1000
TA=75 OC
100
TA=25 OC
10
O
TA=0 C
1
O
TA=-40 C
0.1
0
0
10
20
30
40
0
20
40
60
80
100
VR, Reverse Voltage (V)
VR, Reverse Voltage (V)
REV:B
Page 2
QW-B0042
Comchip Technology CO., LTD.