CDST116-G

SMD Switching Diode
CDST116-G
RoHS Device
Features
SOT-23
0.119(3.00)
-Low leakage current applications.
0.110(2.80)
3
-Medium speed switching times.
0.056(1.40)
0.047(1.20)
Polarity:
1
2
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.044(1.10)
0.103(2.60)
0.035(0.90)
0.086(2.20)
0.006(0.15) max
Marking: JV
0.020(0.50)
0.007(0.20) min
0.013(0.35)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Value
Unit
VRRM
VRWM
VR
t
75
V
V
Forward continuous current
IFM
215
mA
Power dissipation
PD
250
mW
Junction temperature
TJ
150
O
C
-55 to +150
O
C
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Storage temperature
TSTG
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
Conditions
IR=100μA
Symbol
Min
Typ.
Max
Unit
V(BR)R
75
V
V
V
IF=1mA
VF1
0.9
V
IF=10mA
VF2
1
V
IF=50mA
VF3
1.1
V
IF=150mA
VF4
1.25
V
5
μA
Forward voltage
Reverse current
VR=75V
IR
Capacitance between terminals
VR=0V, f=1MHz
CT
Reverse recovery time
IF=IR=10mA, Irr=0.1×IR,
RL=100Ω
trr
2
pF
3
nS
REV:A
QW-B0029
Page 1
SMD Switching Diode
RATING AND CHARACTERISTIC CURVES (CDST116-G)
Fig.2 - Forward Voltage Characteristics
Fig.1 - Forward Current Derating Curve
100
0
xm
i u
mv
alue
s
a l v a lu
T j= 2
5 OC
, Ma
T=
j 25 O
C
, Typ i c
5 0 OC
100
0
0
200
100
1
0.4
0.8
1.2
Ambient Temperature (°C)
VF, Forward Voltage (V)
Fig.3 - Reverse Characteristics
Fig.4 - Diode Capacitance Characteristics
100
1.6
2
CT, Diode Capacitance (pF)
IR, Reverse Current (nA)
200
T j= 1
200
es
300
IF, Forward Current (mA)
IF, Forward Current (mA)
300
10
1
0.1
0.01
0.001
1
f=1MHz
O
TJ=25 C
0
0
50
100
150
TJ, Junction Temperature (°C)
200
0
5
10
15
20
VR, Reverse Voltage (V)
REV:A
QW-B0029
Page 2
Similar pages