CDST193-G

SMD Switching Diode
CDST193-G
RoHS Device
SOT-23
Features
0.119(3.00)
0.110(2.80)
-Low forward voltage: VF=0.9V (Typ.)
3
-Fast reverse recovery time: trr=1.6nS (Typ.)
0.056(1.40)
0.047(1.20)
Polarity:
1
1. ANODE
2
0.006(0.15)
0.083(2.10)
2. N.C.
0.002(0.05)
0.066(1.70)
3. CATHODE
0.044(1.10)
0.103(2.60)
0.035(0.90)
0.086(2.20)
Marking: F3
0.006(0.15) max
0.020(0.50)
0.007(0.20) min
0.013(0.35)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Value
Unit
Non-repetitive peak reverse voltage
VRM
85
V
DC blocking voltage
VR
80
V
Forward continuous current
IFM
300*
mA
Average rectified output current
IO
100*
mA
Power dissipation
PD
150
mW
Junction temperature
TJ
125
O
C
Storage temperature
TSTG
-55 ~ +125
O
C
Parameter
*Unit rating. Total rating=Unit rating × 1.5
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
Conditions
IR=100μA
Symbol
Min
Min
Max
Unit
V(BR)R
80
V
V
V
IF=1mA
VF1
0.60
V
IF=10mA
VF2
0.72
V
IF=100mA
VF3
0.90
VR=30V
V
Forward voltage
1.2
V
IR1
0.1
μA
VR=80V
IR2
0.5
μA
Capacitance between terminals
VR=0V, f=1MHz
CT
0.90
3.0
pF
Reverse recovery time
IF=IR=10mA, Irr=0.1×IR
trr
1.60
4.0
nS
V
Reverse current
REV:A
QW-B0028
Page 1
SMD Switching Diode
RATING AND CHARACTERISTIC CURVES (CDST193-G)
Fig.2 - Reverse Characteristics
Fig.1 - Forward Voltage Characteristics
1
10μ
O
Ta=125 C
IR, Reverse Current (A)
IF, Forward Current (A)
100m
Ta=100 OC
10m
O
Ta=25 C
1m
O
Ta=-25 C
100μ
10μ
1μ
O
Ta=75 C
100n
O
Ta=50 C
O
Ta=25 C
10n
1n
0
0.2
0.4
0.6
0.8
1.0
1.2
1
20
40
60
80
VF, Forward Voltage (V)
VR, Reverse Voltage (V)
Fig.3 - Capacitance Between Terminals
Fig.4 - Reverse Recovery Time Characteristics
1.0
Ta=25 OC
trr, Reverse Recovery Time (nS)
CT, Total Capacitance (pF)
1.6
f=1MHz
Ta=25 OC
1.2
0.8
0.4
0
0.1
1
10
VR, Reverse Voltage (V)
100
0.5
0.1
0.1
1.0
10
100
IF, Forward Current (mA)
REV:A
QW-B0028
Page 2
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