CDSV3-19-G

SMD Switching Diode
CDSV3-19-G/20-G/21-G
High Speed
RoHS Device
Features
SOT-323
-Fast switching diode.
0.087(2.20)
0.070(1.80)
-Surface mount package ideally for automatic
insertion.
3
0.054(1.35)
0.045(1.15)
-For general purpose switching applications.
1
-High conductance.
2
0.006(0.15)
0.002(0.05)
0.056(1.40)
0.047(1.20)
Mechanical data
-Case: SOT-323
0.087(2.20)
0.078(2.00)
0.044(1.10)
0.035(0.90)
-Terminals: Solder plated, solderable per MILSTD-750, Method 2026.
-Marking: CDSV3-19-G
KA8
CDSV3-20-G
KT2
CDSV3-21-G
KT3
0.004(0.10)max.
0.016(0.40)
0.008(0.20)
0.004(0.10)min.
Dimensions in inches and (millimeters)
Maximum Rating (at Ta=25°C unless otherwise noted)
Symbol
Value
Unit
Power dissipation
PD
200
mW
Forward current
IF
200
mA
VR
120
150
200
V
TJ , TSTG
-55 ~ +150
Parameter
Reverse voltage
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
Junction and storage temperature
O
C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Max
100
150
200
Unit
Reverse breakdown voltage
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
V(BR)R
IR=100uA
Reverse leakage current
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
IR
VR=100V
VR=150V
VR=200V
0.1
UA
Forward voltage
VF
IF=100mA
IF=200mA
1
1.25
V
Diode capacitance
CD
VR=0V, f=1MHZ
5
pF
Reverse recovery time
trr
IF=IR=30mA, Irr=0.1XIR
50
nS
V
REV:A
QW-B0025
Page 1
SMD Switching Diode
Characteristic Curves (CDSV3-19-G/20-G/21-G)
Fig.1 - Forward Characteristics
Fig.2 - Leakage Current vs
Junction Temperature
1000
100
O
IR, Leakage Current (uA)
IF, Forward Current (mA)
TJ=25 C
100
10
1
0.1
0.01
10
1
0.1
0.01
0
1
VF, Forward Voltage (V)
2
0
100
TJ, Junction Temperature (°C)
200
REV:A
QW-B0025
Page 2
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