CPDVR5V0-HF

SMD ESD Protection Diode
CPDVR5V0-HF
RoHS Device
Halogen Free
WBFBP-02C-A
Features
- IEC61000-4-2 Level 4 ESD Protection.
0.026(0.65)
0.022(0.55)
- Bi-directional ESD protection of one line.
- JESD22-A114-B ESD Rating of class 3B
-per human body model.
0.041(1.05)
0.037(0.95)
0.004(0.09)
0.000(0.01)
- Fast response time.
- Low leakage current.
0.022(0.55)
0.018(0.45)
- Low reverse clamping voltage.
Mechanical data
0.015(0.39)
REF.
- Case: WBFBP-02C-A Plastic-Encapsulate Diodes
0.002(0.05)
REF.
- Terminals: Tin plated, solderable per
MIL-STD-750,method 2026.
0.015(0.37)
0.011(0.27)
0.017(0.42)
REF.
0.020(0.50)
0.016(0.40)
- Marking code: Y
- Mounting position: Any.
0.002(0.05)
REF.
0.014(0.36)
REF.
0.027(0.68)
0.023(0.58)
Circuit Diagram
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Parameter
Air Model
Limit
Unit
±25
IEC 61000-4-2 ESD Voltage
Contact Model
(1)
±25
VESD
kV
JESD22-A114-B ESD Voltage
Per Human Body Model
±16
ESD Voltage
Machine Model
±0.4
(2)
Peak Pulse Power
PPP
Peak Pulse Current
IPP
Lead Solder Temperature - Maximum (10 Second Duration)
Junction temperature
Storage temperature rang
40
W
4
A
TL
260
°C
TJ
150
°C
TSTG
-55 to +150
°C
(2)
Notes:
(1) Device stressed with ten non-repetitive ESD pulses.
(2) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
Company reserves the right to improve product design , functions and reliability without notice.
REV: C
Page 1
QW-JP042
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Min
Typ
Max
Unit
-
-
5
V
IR
-
-
0.1
μA
5.8
-
8.0
V
-
-
10
V
-
12
15
pF
Symbol
Conditions
Reverse stand-off voltage
VRWM
Reverse leakage current
VRWM = 5 V
Breakdown voltage
IT= 1 mA
V(BR)
Clamping voltage
IPP= 4 A
VC
Junction capacitance
VR= 0V , f=1MHz
CJ
(1)
(2)
Notes:
(1) Other voltages available upon request.
(2) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
RATING AND CHARACTERISTIC CURVES (CPDVR5V0-HF)
Fig.1 - Reverse Characteristics
Fig.2 - Capacitance Characteristics
15
Pulsed
TA=100°C
Reverse Current, (mA)
75
50
TA=25°C
25
0
-25
-50
-75
Capacitance Between Terminals, (pF)
100
TA=25°C
f=1MHz
12
9
6
3
0
-100
-8
-6
-4
-2
0
2
4
6
8
Reverse Voltage, (V)
0
1
2
3
4
5
6
Reverse Voltage, (V)
Fig.3 - VC — IPP
8.0
Clamping Voltage, (V)
TA=25°C
tp=8/20μs
7.5
7.0
6.5
6.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Reverse Peak Pulse Current, (A)
Company reserves the right to improve product design , functions and reliability without notice.
REV: C
Page 2
QW-JP042
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
E
Index hole
F
W
B
C
A
P
D1
D2
D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
WBFBP
-02C-A
WBFBP
-02C-A
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.66 ± 0.05
1.15 ± 0.05
0.66 ± 0.05
1.50 + 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.026 ± 0.002
0.045 ± 0.002
0.026 ± 0.002
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
2.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.079 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV: C
Page 3
QW-JP042
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
Part Number
Marking Code
CPDVR5V0-HF
Y
Y
Suggested PAD Layout
WBFBP-02C-A
D
SIZE
(mm)
(inch)
A
0.55
0.022
B
0.52
0.020
C
0.15
0.006
D
0.63
0.025
E
1.00*0.60 PKG.
E
C
A
C
B
Standard Packaging
REEL PACK
Case Type
WBFBP-02C-A
REEL
Reel Size
( pcs )
(inch)
10,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV: C
Page 4
QW-JP042
Comchip Technology CO., LTD.
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