CPDVR5V0P-HF

Low Capacitance SMD ESD Protection Diode
CPDVR5V0P-HF
RoHS Device
Halogen Free
WBFBP-02C-A
Features
- IEC61000-4-2 Level 4 ESD Protection.
0.026(0.65)
0.022(0.55)
- Bi-directional ESD protection of one line.
- Fast response time.
0.041(1.05)
0.037(0.95)
- Low Leakage current.
0.004(0.09)
0.000(0.01)
- Low reverse clamping voltage.
- Low capacitance.
0.022(0.55)
0.018(0.45)
Mechanical data
0.015(0.39)
REF.
- Case: WBFBP-02C-A plastic-encapsulate diodes
- Terminals: Tin plated, solderable per
MIL-STD-750, method 2026.
0.015(0.37)
0.011(0.27)
0.002(0.05)
REF.
- Mounting position: Any.
0.002(0.05)
REF.
0.017(0.42)
REF.
0.020(0.50)
0.016(0.40)
Circuit Diagram
0.014(0.36)
REF.
0.027(0.68)
0.023(0.58)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Parameter
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
JESD22-A114-B ESD Voltage
ESD Voltage
PPP
52
W
4
A
TL
260
°C
TJ, TSTG
-55 to +150
°C
Peak Pulse Current
IPP
Maximum (10 Second Duration)
Junction & Storage temperature range
kV
±16
0.4
(3)
Peak Pulse Power
Lead Solder Temperature
±15
±15
(1)
VESD
Per Human Body Model
Per Machine Model
Unit
Value
(3)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Reverse stand-Off voltage
VRWM
Reverse leakage current
VRWM = 5 V
Breakdown voltage
IT = 1 mA
V(BR)
Clamping voltage
IPP= 4 A
VC
Junction capacitance
VR= 0V , F=1MHz
CJ
Min
Typ
(2)
IR
5.6
(3)
3
Max
Unit
5
V
1
μA
8
V
13
V
pF
Notes: 1. Device stressed with ten non-repetitive ESD pulses.
2. Other voltages available upon request.
3. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP056
Page 1
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDVR5V0P-HF)
Fig.1 - 8/20us Peak Pulse Current
Waveform ACC. IEC 61000-4-5
Peak Valur Ipp
100%
Percentage of Ipp
Test Waveform
parameters
tf=8us
td=20us
Ta=25°C
e-t
80%
60%
40%
td= t Ipp/2
20%
0%
4
TA=25°C
f=1MHz
Junction Capacitance, CJ (pF)
120%
Fig.2 - Typical Capacitance Characteristics
3
2
1
0
0
5
10
15
20
25
30
0
Time, (us)
1
2
3
4
5
6
Reverse Voltage, VR ( V )
Fig.3 - Clamping Voltage Vs.
Peak Pulse Current
15
Clamping voltage, VC (V)
TA=25°C
tp=8/20us
12
9
6
3
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Reverse Peak Pulse Current, IPP (A)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP056
Page 2
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
P0
P1
d
F
W
E
C
A
P
D1
D2
D
W1
Trailer Tape
100±4 Empty Pockets
WBFBP
-02C-A
WBFBP
-02C-A
Leader Tape
200±4 Empty Pockets
Components
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.66 ± 0.05
1.15 ± 0.05
0.66 ± 0.05
1.50 + 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.026 ± 0.002
0.045 ± 0.002
0.026 ± 0.002
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
2.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.079 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP056
Page 3
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
Marking Code
Part Number
CPDVR5V0P-HF
HD
HD
Suggested PAD Layout
WBFBP-02C-A
D
SIZE
(mm)
(inch)
A
0.55
0.022
B
0.52
0.020
C
0.15
0.006
D
0.63
0.025
E
1.00*0.60 PKG.
E
C
A
C
B
Standard Packaging
REEL PACK
Case Type
WBFBP-02C-A
REEL
Reel Size
( pcs )
(inch)
10,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP056
Page 4
Comchip Technology CO., LTD.
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