SMD ESD Protection Diode CPDVRC5V0L-HF RoHS Device Halogen Free Features WBFBP-02C - IEC61000-4-2 Level 4 ESD Protection. - Bi-directional ESD protection of one line. 0.004(0.10) 0.000(0.01) - Fast response time. 0.026(0.65) 0.022(0.55) - Low Leakage current. 0.022(0.55) 0.018(0.45) - Low reverse clamping voltage. 0.041(1.05) 0.037(0.95) - Low capacitance. 0.019(0.47) REF. Mechanical data 0.014(0.35) 0.010(0.25) 0.019(0.47) 0.015(0.37) - Case: WBFBP-02C Plastic Encapsulate Diodes 0.001(0.30) REF. 0.002(0.04) REF. - Mounting position: Any. 0.017(0.42) REF. Circuit Diagram 0.014(0.35) 0.010(0.25) 0.015(0.37) 0.011(0.27) 0.026(0.66) 0.022(0.56) 0.009(0.23) REF. Dimensions in inches and (millimeter) Maximum Rating (at T =25°C unless otherwise noted) A Symbol Parameter Air Model Value Unit ±20 IEC 61000-4-2 ESD voltage Contact Model JESD22-A114-B ESD Voltage ESD Voltage Per Human Body Model (1) VESD Machine Model ±20 kV ±16 ±0.4 (2) 50 W (2) 5 A TL 260 °C Junction temperature rang TJ 150 °C Storage temperature rang TSTG -55 to +150 °C Peak Pulse Power PPP IPP Peak Pulse Current Lead Solder Temperature Maximum (10 Second Duration) Notes: 1. Device stressed with ten non-repetitive ESD pulses. 2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP055 Page 1 Comchip Technology CO., LTD. SMD ESD Protection Diode Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Symbol Conditions Reverse stand-Off voltage VRWM Reverse leakage current VRWM = 5 V Breakdown voltage IT = 1 mA Typ Min Max Unit 5 V 0.1 μA 8 V 10 V 15 pF (1) IR V(BR) Clamping voltage IPP= 5A VC Junction capacitance VR= 0V, f=1MHz CJ 5.8 (2) 12 Notes: 1. Other voltages available upon request. 2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. RATING AND CHARACTERISTIC CURVES (CPDVRC5V0L-HF) Fig.2 - Capacitance Characteristics 120% Peak Valur Ipp 100% Percentage of Ipp Test Waveform parameters tf=8us td=20us Ta=25°C e-t 80% 60% 40% td= t Ipp/2 20% Capacitance Between Terminals, (pF) Fig.1 - 8/20us Peak Pulse Current Waveform ACC. IEC 61000-4-5 15 TA=25°C f=1MHz 12 9 6 3 0 0% 0 0 5 10 15 20 25 30 1 2 3 4 5 Reverse Voltage, ( V ) Time, (us) Fig.3 - VC ─ IPP 10 Clamping voltage, (V) 8 6 4 2 TA=25°C tp=8/20us 0 1 2 3 4 5 Reverse Peak Pulse Current, (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP055 Page 2 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification d P0 P1 T E F W B A C P D2 D1 D W1 Trailer Tape Leader Tape 100±4 Empty Pockets WBFBP -02C WBFBP -02C 200±4 Empty Pockets Components SYMBOL A B C d D D1 D2 (mm) 0.66 ± 0.05 1.15 ± 0.05 0.66 ± 0.05 1.50 + 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.026 ± 0.002 0.045 ± 0.002 0.026 ± 0.002 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 2.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 / -0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.079 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 / -0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 3 QW-JP055 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code Part Number Marking Code CPDVRC5V0L-HF H H Suggested PAD Layout WBFBP-02C (mm) (inch) A 2 X 0.40 2 X 0.016 B 0.50 0.020 C 0.15 0.006 D 0.605 0.024 E 0.62 C D 1.00X0.60PKG. SIZE A C 0.024 B E Standard Packaging REEL PACK Case Type WBFBP-02C REEL Reel Size ( pcs ) (inch) 10,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP055 Page 4 Comchip Technology CO., LTD.