CPDVRC5V0L-HF

SMD ESD Protection Diode
CPDVRC5V0L-HF
RoHS Device
Halogen Free
Features
WBFBP-02C
- IEC61000-4-2 Level 4 ESD Protection.
- Bi-directional ESD protection of one line.
0.004(0.10)
0.000(0.01)
- Fast response time.
0.026(0.65)
0.022(0.55)
- Low Leakage current.
0.022(0.55)
0.018(0.45)
- Low reverse clamping voltage.
0.041(1.05)
0.037(0.95)
- Low capacitance.
0.019(0.47)
REF.
Mechanical data
0.014(0.35)
0.010(0.25)
0.019(0.47)
0.015(0.37)
- Case: WBFBP-02C Plastic Encapsulate
Diodes
0.001(0.30)
REF.
0.002(0.04)
REF.
- Mounting position: Any.
0.017(0.42)
REF.
Circuit Diagram
0.014(0.35)
0.010(0.25)
0.015(0.37)
0.011(0.27)
0.026(0.66)
0.022(0.56)
0.009(0.23)
REF.
Dimensions in inches and (millimeter)
Maximum Rating (at T =25°C unless otherwise noted)
A
Symbol
Parameter
Air Model
Value
Unit
±20
IEC 61000-4-2 ESD voltage
Contact Model
JESD22-A114-B ESD Voltage
ESD Voltage
Per Human Body Model
(1)
VESD
Machine Model
±20
kV
±16
±0.4
(2)
50
W
(2)
5
A
TL
260
°C
Junction temperature rang
TJ
150
°C
Storage temperature rang
TSTG
-55 to +150
°C
Peak Pulse Power
PPP
IPP
Peak Pulse Current
Lead Solder Temperature
Maximum (10 Second Duration)
Notes: 1. Device stressed with ten non-repetitive ESD pulses.
2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Comchip Technology CO., LTD.
SMD ESD Protection Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Reverse stand-Off voltage
VRWM
Reverse leakage current
VRWM = 5 V
Breakdown voltage
IT = 1 mA
Typ
Min
Max
Unit
5
V
0.1
μA
8
V
10
V
15
pF
(1)
IR
V(BR)
Clamping voltage
IPP= 5A
VC
Junction capacitance
VR= 0V, f=1MHz
CJ
5.8
(2)
12
Notes: 1. Other voltages available upon request.
2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
RATING AND CHARACTERISTIC CURVES (CPDVRC5V0L-HF)
Fig.2 - Capacitance Characteristics
120%
Peak Valur Ipp
100%
Percentage of Ipp
Test Waveform
parameters
tf=8us
td=20us
Ta=25°C
e-t
80%
60%
40%
td= t Ipp/2
20%
Capacitance Between Terminals, (pF)
Fig.1 - 8/20us Peak Pulse Current
Waveform ACC. IEC 61000-4-5
15
TA=25°C
f=1MHz
12
9
6
3
0
0%
0
0
5
10
15
20
25
30
1
2
3
4
5
Reverse Voltage, ( V )
Time, (us)
Fig.3 - VC ─ IPP
10
Clamping voltage, (V)
8
6
4
2
TA=25°C
tp=8/20us
0
1
2
3
4
5
Reverse Peak Pulse Current, (A)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP055
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Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
F
W
B
A
C
P
D2
D1 D
W1
Trailer Tape
Leader Tape
100±4 Empty Pockets
WBFBP
-02C
WBFBP
-02C
200±4 Empty Pockets
Components
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.66 ± 0.05
1.15 ± 0.05
0.66 ± 0.05
1.50 + 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.026 ± 0.002
0.045 ± 0.002
0.026 ± 0.002
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
2.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 / -0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.079 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.315 + 0.012 / -0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 3
QW-JP055
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
Part Number
Marking Code
CPDVRC5V0L-HF
H
H
Suggested PAD Layout
WBFBP-02C
(mm)
(inch)
A
2 X 0.40
2 X 0.016
B
0.50
0.020
C
0.15
0.006
D
0.605
0.024
E
0.62
C
D
1.00X0.60PKG.
SIZE
A
C
0.024
B
E
Standard Packaging
REEL PACK
Case Type
WBFBP-02C
REEL
Reel Size
( pcs )
(inch)
10,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP055
Page 4
Comchip Technology CO., LTD.
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