SMD ESD Protection Diode CPDZ5V0-HF RoHS Device Halogen Free 0201/DFN0603 Features - Bi-directional ESD protection of one line. - IEC61000-4-2 Level 4 ESD protection. 0.015(0.37) 0.011(0.27) - Low capacitance: 3pF(Typ.) - Low reverse stand-off voltage: 5V 0.026(0.67) 0.022(0.57) - Low reverse clamping voltage. - Low leakage current. Mechanical data 0.013(0.340) 0.011(0.275) - Case: 0201/DFN0603 package, molded plastic. 0.002(0.05) REF. - Polarity: Color band denotes cathode end. 0.017(0.435) 0.014(0.365) 0.001(0.03) REF. - Mounting position: Any 0.012(0.295) 0.009(0.225) Circuit diagram 0.008(0.195) 0.005(0.125) 0.008(0.195) 0.005(0.125) Dimensions in inches and (millimeter) Maximum Ratings (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Air model IEC 61000-4-2 (1) Per human body model ESD voltage Machine model Operation temperature range Storage temperature range ±16 kV 52 W (2) PP 4 A TL 260 °C TJ 150 °C TSTG -55~+150 °C I Maximum(10 second duration) ±15 ±0.4 P Peak pulse current Lead solder temperature VESD (2) PP Peak pulse power Unit ±15 Contact model JESD22-A114-B ESD voltage Limit Notes: (1) Device stressed with ten non-repetitive ESD pulses. (2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-JP045 Comchip Technology CO., LTD. SMD ESD Protection Diode Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Typ Max Unit 5 V 1 µA 8 V 13 V (1) Working peak reverse voltage VRWM Reverse leakage current VRWM = 5V Breakdown voltage IT = 1mA V(BR) Clamping voltage IPP = 4 A VC (2) Junction capacitance VR = 0V, f = 1MHz IR 5.6 pF 3 CJ Notes: (1) Other voltage available upon request. (2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5 RATING AND CHARACTERISTIC CURVES (CPDZ5V0-HF) Fig. 1 - 8/20us Peak Pulse Current Waveform Acc. IEC 61000-4-5 4 Ta=25°C 100% Test Waveform parameters tf=8us td=20us Peak Valur Ipp e-t 80% 60% 40% td= t Ipp/2 20% TA=25°C f=1MHz Junction Capacitance, (pF) 120% Percentage of Ipp Fig. 2 - Capacitance Characteristics 3 2 1 0 0% 0 5 10 15 20 25 30 0 1 2 3 4 5 Reverse Voltage, ( V ) Time, (us) Fig.3 - Clamping Voltage Vs. Peak Pulse Current 25 Clamping Voltage,VC (V) TA=25°C TP=8/20us 12 9 6 3 1 1.5 2.0 2.5 3.0 3.5 4.0 Peak Pulse Current, IPP (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-JP045 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification d P0 P1 T E F W B A C P 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed 0201 (DFN0603) 0201 (DFN0603) SYMBOL A B C d D D1 D2 (mm) 0.39 +0.03/-0.02 0.72 ± 0.03 0.36 ± 0.03 1.50 + 0.10 178 ± 1.00 54.4 ± 0.40 13.0 ± 0.20 (inch) 0.015 +0.001/-0.001 0.028 ± 0.001 0.014 ± 0.001 0.059 + 0.004 7.008 ± 0.039 2.142 ± 0.016 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 2.00 ± 0.05 4.00 ± 0.05 2.00 ± 0.05 0.23 ± 0.05 8.00 ± 0.10 12.30 ± 0.10 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.079 ± 0.002 0.157 ± 0.002 0.079 ± 0.002 0.009 ± 0.002 0.315 ± 0.004 0.484 ± 0.004 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 3 QW-JP045 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code Part Number Marking Code CPDZ5V0-HF I I Suggested PAD Layout 0201(DFN0603) SIZE (mm) (inch) A 0.16 0.006 B 0.24 0.009 C 0.34 0.013 D 0.40 0.016 E D A C B E 0.64 0.025 Standard Packaging Case Type 0201(DFN0603) Qty Per Reel Reel Size (Pcs) (inch) 10,000 7 Company reserves the right to improve product design , functions and reliability without notice. QW-JP045 REV:A Page 4