CPDZE5V0H-HF

SMD ESD Protection Diode
CPDZE5V0H-HF
RoHS Device
Halogen Free
Features
- Bi-directional ESD protection of one line.
WBFBP-02E
- IEC61000-4-2 Level 4 ESD protection.
- Low capacitance: 10pF(Typ.)
0.026(0.37)
0.022(0.27)
- Low reverse stand-off voltage: 5V
- Low reverse clamping voltage.
0.041(0.67)
0.037(0.57)
- Low leakage current.
0.004(0.09)
0.000(0.01)
Mechanical data
0.013(0.34)
0.011(0.28)
- Case: 0201/DFN0603 package,
molded plastic.
- Terminals: Tin plated, solderable per
MIL-STD-750, method 2026.
0.007(0.19)
REF.
0.008(0.20)
0.005(0.13)
- Polarity: Color band denotes cathode end.
0.008(0.20)
0.005(0.13)
0.001(0.03)
REF.
- Mounting position: Any
0.012(0.30)
0.009(0.23)
Circuit diagram
0.017(0.44)
0.015(0.37)
Dimensions in inches and (millimeter)
Maximum Ratings (at T =25°C unless otherwise noted)
A
Parameter
Conditions
Symbol
Air model
Value
Unit
±15
IEC 61000-4-2
Contact model
JESD22-A114-B ESD voltage
Per human body model
ESD voltage
Machine model
50
W
5
A
TL
260
°C
TJ
150
°C
TSTG
-55~+150
°C
I
Maximum(10 second duration)
Operation temperature range
Storage temperature range
kV
±16
(2)
PP
P
Peak pulse current
±8
±0.4
(2)
PP
Peak pulse power
Lead solder temperature
(1)
VESD
Notes:
(1) Device stressed with ten non-repetitive ESD pulses.
(2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Page 1
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
5
V
0.1
µA
8
V
10
V
(1)
Working peak reverse voltage
VRWM
Reverse leakage current
VRWM = 5V
Breakdown voltage
IT = 1mA
V(BR)
Clamping voltage
IPP = 5 A
(2)
Junction capacitance
VR = 0V, f = 1MHz
IR
VC
5.8
pF
10
CJ
Notes:
(1) Other voltage available upon request.
(2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
RATING AND CHARACTERISTIC CURVES (CPDZE5V0H-HF)
Fig.1 - 8/20us Peak Pulse Current
Waveform Acc. IEC 61000-4-5
12
Ta=25°C
100%
Test Waveform
parameters
tf=8us
td=20us
Peak Valur Ipp
e-t
80%
60%
40%
td= t Ipp/2
20%
TA=25°C
f=1MHz
Junction Capacitance, (pF)
120%
Percentage of Ipp
Fig.2 - Capacitance Characteristics
9
6
3
0
0%
0
5
10
15
20
25
30
0
1
2
3
4
5
Reverse Voltage, ( V )
Time, (us)
Fig.3 - Clamping Voltage Vs.
Peak Pulse Current
9
TA=25°C
TP=8/20us
Clamping Voltage,VC (V)
8
7
6
5
4
3
0.5
1
2
3
4
5
Peak Pulse Current, IPP (A)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP052
Page 2
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
F
W
B
A
C
P
12
o
0
D2
D1 D
W1
Trailer Tape
Leader Tape
100±4 Empty Pockets
0201
(DFN0603)
0201
(DFN0603)
200±4 Empty Pockets
Components
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.39 +0.03/-0.02
0.72 ± 0.03
0.36 ± 0.03
1.50 + 0.10
178 ± 1.00
54.4 ± 0.40
13.0 ± 0.20
(inch)
0.015 +0.001/-0.001
0.028 ± 0.001
0.014 ± 0.001
0.059 + 0.004
7.008 ± 0.039
2.142 ± 0.016
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
2.00 ± 0.05
4.00 ± 0.05
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.10
12.30 ± 0.10
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.079 ± 0.002
0.157 ± 0.002
0.079 ± 0.002
0.009 ± 0.002
0.315 ± 0.004
0.484 ± 0.004
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
QW-JP052
Page 3
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
Part Number
Marking Code
CPDZE5V0H-HF
H
H
Suggested PAD Layout
0201(DFN0603)
SIZE
(mm)
(inch)
A
0.16
0.006
B
0.24
0.009
C
0.34
0.013
D
0.40
0.016
E
D
A
C
B
E
0.64
0.025
Standard Packaging
Case Type
0201(DFN0603)
Qty Per Reel
Reel Size
(Pcs)
(inch)
10,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP052
Page 4
Comchip Technology CO., LTD.
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