CPDA10R5V0P-HF

SMD ESD Protection Diode
CPDA10R5V0P-HF
RoHS Device
Halogen Free
Features
- IEC61000-4-2 (ESD)±14kV(Contact),±15kV(Air).
DFN10P
- Working voltage: 5.0 V
0.100(2.55)
0.096(2.45)
- Low leakage current.
- Low capacitance: 0.25 pF typical (I/O to GND)
0.041(1.05)
0.037(0.95)
Mechanical data
- Case: DFN10p package,molded plastic.
0.014(0.35) Typ.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
- Mounting position: Any
Circuit Diagram
0.008(0.20) Typ.
I/O
Pin 1
I/O
Pin 2
I/O
Pin 4
I/O
Pin 5
0.022(0.55)
0.018(0.45)
0.016(0.40) Typ.
0.014(0.35) Typ.
GND
Pin 3
Dimensions in inches and (millimeters)
Package
N/C
N/C
10
9
8
N/C
N/C
7
6
4
5
I/O
I/O
GND
1
2
I/O
I/O
3
Company reserves the right to improve product design , functions and reliability without notice.
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QW-G7081
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Maximum Rating (at TA=25 °C unless otherwise noted)
Symbol
Value
Unit
Peak pulse power ( tp = 8/20 us)
PPP
60
W
Peak pulse current ( tp = 8/20 us)
IPP
3
A
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
ESD
±15
±14
kV
TJ
-55 to +125
°C
TSTG
-55 to +150
°C
Parameter
Operating temperature range
Storage temperature range
Electrical Characteristics (at TA=25 °C unless otherwise noted)
Parameter
Conditions
Reverse stand-off voltage
Symbol
Min
Typ
VRWM
Max
Unit
5
V
Breakdown voltage
IR = 1mA
VBR
Leakage current
VR = 5.0V
IL
IPP = ±1 A, Tp=8/20us,
Any Channel Pin to Ground
VC
11
V
IPP = ±2 A, Tp=8/20us,
Any Channel Pin to Ground
VC
13
V
VR = 0 V, f = 1MHz
Any Channel Pin to Ground
Cj
0.25
pF
6.0
V
50
nA
Clamping voltage
Junction capacitance
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-G7081
Comchip Technology CO., LTD.
SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDA10R5V0P-HF)
Fig.1 - 8/20us Peak Pulse Current
Waveform ACC. IEC 61000-4-5
Peak Valur Ipp
Percentage of Ipp
100%
0.60
Test Waveform
parameters
tf=8us
td=20us
Ta=25°C
Capacitance Between Terminals, (pF)
120%
e-t
80%
60%
40%
Fig.2 - Typical Capacitance Between
Terminals Characteristics
td= t Ipp/2
20%
0%
5
0
10
15
20
25
f=1MHz
TA=25°C
0.50
0.40
0.30
0.20
0.10
0.00
0
30
1
2
3
4
5
Time, (us)
Fig.3 - Typical Clamping Voltage Vs.
Peak Pulse Current
Fig.4 - Power Rating Derating Curve
30
120
25
100
Power Rating, (%)
Clamping Voltage, (V)
Mounting on glass epoxy PCBs
20
15
10
Waveform
Parameters:
tr=8us
td=20us
5
0
1
1.5
2.0
2.5
80
60
40
20
0
3.0
0
25
50
75
100
125
150
Ambient Temperature, ( °C )
Peak Pulse Current, (A)
Company reserves the right to improve product design , functions and reliability without notice.
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Page 3
QW-G7081
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
.E5P
F
W
B
C
P
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
160mm (min)
Start
400mm (min)
Direction of Feed
DFN10P
DFN10P
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.14 ± 0.05
2.64 ± 0.05
0.64 ± 0.05
1.50 + 0.10
- 0
178.00 ± 1.00
60.00 + 0.50
- 0
13.00 ± 0.20
(inch)
0.045 ± 0.002
0.104 ± 0.002
0.025 ± 0.002
0.059 + 0.004
- 0
7.008 ± 0.039
2.362 + 0.020
- 0
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.20 ± 0.05
8.00 ± 0.30
12.00 ± 0.15
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.008 ± 0.002
0.315 ± 0.012
0.472 ± 0.006
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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QW-G7081
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
Part Number
Marking Code
CPDA10R5V0P-HF
.E5P
.E5P
Suggested PAD Layout
DFN10P
SIZE
(mm)
(inch)
A
2.30
0.091
B
1.00
0.039
C
0.38
0.015
D
0.30
0.012
E
0.30
0.012
F
0.50
0.020
G
0.24
0.009
A
B
G
C
D
E
F
Standard Packaging
Case Type
DFN10P
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
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REV:A
Page 5
QW-G7081
Comchip Technology CO., LTD.
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