CPDT6-5V0USP-HF

Low Capacitance SMD ESD Protection Diode
CPDT6-5V0USP-HF
RoHs Device
Halogen Free
SOT-23-6
Features
0.119(3.02)
0.111(2.82)
- Uni-directional ESD protection of four lines.
0.067(1.70)
0.059(1.50)
- IEC61000-4-2 Level 4 ESD protection.
0.037(0.95)
BSC.
- JESD22-A114-B ESD Rating of class 3B per
human body model.
0.079(2.00)
0.071(1.80)
- Low reverse stand-off voltage: 5V
0.008(0.20)
0.004(0.10)
0.045(1.15)
0.041(1.05)
- Low reverse clamping voltage.
0.116(2.95)
0.104(2.65)
- Low leakage current.
- Fast response time.
0.024(0.60)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
Mechanical data
Dimensions in inches and (millimeter)
- Case: SOT-23-6 standard package
molded plastic.
Pin Configuration
- Terminals: Solder plated, solderable per
MIL-STD-750,method 2026.
I/O6
VCC
I/O4
6
5
4
1
2
3
I/O1
GND
I/O3
- Mounting position: Any
- Weight: 0.015 grams(approx.).
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
(2)
125
W
(2)
5
A
Peak pulse power
PPP
Peak pulse current
IPP
IEC 61000-4-2 voltage
(I/O to GND & VCC to GND)
Air model
±25
±25
Contact model
(1)
JESD22-A114-B ESD voltage
(I/O to GND & VCC to GND)
ESD voltage (I/O to GND & VCC to GND)
kV
VESD
Per Human Body model
±16
Machine Model
±0.4
Lead soldering temperature - Maximim(10 second duration)
TL
260
°C
Junction temperature range
Tj
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Notes: 1. Device stressed with ten non-repetitive ESD pulses, Per channel (I/O to GND).
2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-JP050
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Unit
5
V
6.5
8.8
V
5.8
8.1
V
1
µA
1.0
V
(1)
Reverse stand-Off voltage
VRWM
IT = 1mA
Brekdown voltage
Typ
Max
Min
V(BR)
IT = 1mA VCC to GND
Reverse leakage current
VRWM = 5 V
(I/O to GND & VCC to GND)
IR
Forward voltage
IF = 10 mA
(I/O to GND & VCC to GND)
VF
IPP = 1 A
(I/O to GND & VCC to GND)
Clamping voltage
IPP = 5 A
(I/O to GND & VCC to GND)
0.5
15
(2)
VC
25
VR = 0V, f =1MHz
Junction capacitance
V
0.8
pF
Cj
VR = 0V, f =1MHz, I/O to I/O
0.4
Notes: 1. Other voltages available upon request.
2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-JP050
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDT6-5V0USP-HF)
Fig.1 - 8/20us Peak Pulse Current
Wave Form Acc. IEC 61000-4-5
120%
Percentage of Ipp
100%
Peak Valur Ipp
e-t
80%
60%
40%
240
Test Waveform
parameters
tf=8us
td=20us
Mounted on glass epoxy PCBs
200
Power Dissipation, PD (W)
Ta=25°C
Fig.2 - Power Derating Curve
td= t Ipp/2
160
120
80
40
20%
0
0%
0
5
10
15
20
25
0
30
25
75
50
100
125
150
Ambient Temperature, TA (°C)
Time, (us)
Fig.4 - Clamping Voltage Vs.
Peak Pulse Current
Fig.3 - Capacitance Characteristics
30
I/O Pin to Ground
Ta=25°C
f=1MHZ
Ta=25°C
tp=8/20us
I/O Pin to I/O Pin
Clamping Voltage, VC (V)
Capacitance Between Terminals, CT (pF)
2.5
2.0
1.5
1.0
0.5
25
20
I/O Pin to Ground
15
VCC to Ground
10
5
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Peak Pulse Current, IPP (A)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
QW-JP050
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
Reel Taping Specification
P1
d
T
W
B
F
E
P0
C
A
P
12
o
0
D2
D1
D
W1
SOT-23-6
SOT-23-6
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.17 ± 0.10
3.23 ± 0.10
1.37 ± 0.10
1.50 ± 0.05
180.0 + 0.00 /–0.30
60.00 ± 0.50
13.00 ± 0.20
(inch)
0.125 ± 0.004
0.127 ± 0.004
0.054 ± 0.004
0.059 ± 0.002 7.087 + 0.00 /–0.012
2.362 ± 0.020
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 + 0.30 /–0.10
12.30 ± 0.20
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002 0.315 + 0.012 /–0.004 0.484 ± 0.008
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
QW-JP050
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
Marking Code
6
Part Number
Marking Code
CPDT6-5V0USP-HF
U5H4
5
4
U5H4
1
2
3
U5H4 = Product type marking code
●
= Pin 1 indicator
Suggested PAD Layout
C
SOT-23-6
SIZE
(mm)
(inch)
A
A
1.00
0.039
B
0.70
0.028
C
0.95
0.037
D
2.40
0.094
E
3.40
0.134
D E
B
Standard Packaging
REEL PACK
Case Type
SOT-23-6
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 5
QW-JP050
Comchip Technology CO., LTD.
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