CPDV5-3V3UP-HF

SMD ESD Protection Diode
CPDV5-3V3UP-HF
RoHS Device
Halogen Free
Features
SOT-353
-IEC61000-4-2 Level 4 ESD protection
0.087(2.20)
0.079(2.00)
-Working voltage: 3.3V
-Low leakage current.
0.053(1.35)
0.045(1.15)
-Low operating and clamping voltages.
0.055(1.40)
0.047(1.20)
Mechanical data
-Case: SOT-353 standard package ,molded plastic.
0.006(0.15)
0.003(0.08)
-Terminals: Tin plated, solderable per
MIL-STD-750,method 2026.
0.039(1.00)
0.035(0.90)
0.096(2.45)
0.085(2.15)
-Mounting position: Any
-Weight: 0.0070 gram (approx.).
Circuit Diagram
5
0.018(0.46)
0.010(0.26)
0.004(0.10)
0.000(0.00)
0.014(0.35)
0.006(0.15)
4
Dimensions in inches and (millimeter)
1
2
3
Maximum Ratings (at T =25°C unless otherwise noted)
A
Symbol
Value
Unit
Peak pulse power ( tp = 8/20 us)
PPP
40
W
Peak pulse current
IPP
5
A
VESD
±20
±15
kV
Tj
-55 to +125
O
-55 to +125
O
Parameter
( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
TSTG
C
C
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Conditions
Reverse stand-off voltage
Symbol Min Typ Max Unit
3.3
VRWM
V
Punch-through voltage
IPT = 2uA
VPT
3.5
V
Snap-back voltage
ISB = 50mA
VSB
2.8
V
Reverse leakage current
VRWM = 3.3V
IR
IPP = 1 A, tp=8/20us
0.5
uA
VC
5.5
V
IPP = 5 A, tp=8/20us
VC
8.0
V
Reverse clamping voltage
IPPR = 1 A, tp=8/20us
VCR
2.4
V
Junction capacitance
VR = 0 V, f = 1MHz
16
pF
0.05
Clamping voltage
Cj
12
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 1
QW-JP023
Comchip Technology CO., LTD.
SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDV5-3V3UP-HF)
Fig.1 - Non-repetitive max. peak pulse power
vs. pulse time
Fig.2 - Power rating derating curve
110
100
90
80
Power rating (%)
Max. peak pulse power-PPP(kW )
1
0.1
70
60
50
40
30
20
10
0.01
0
0.1
1
100
10
0
1000
25
50
75
100
Ambient temperature (
Pulse duration-tp(us)
Fig.3 - Clamping voltage vs.
peak pulse current
150
C)
Fig.4 - Forward voltage vs.
Forward current
16
12
Waveform
Parameters:
tr=8us
td=20us
14
10
12
Forward voltage (V)
Clamping voltage (V)
125
O
10
8
Waveform
Parameters:
tr=8us
td=20us
6
4
8
6
4
2
2
0
0
0
1
2
3
4
5
6
Peak pulse current(A)
0
1
2
3
4
5
6
Forward current(A)
Fig.5 - Junction capacitance vs.
reverse voltage
Normalized capacitance - Cj (pF)
20
16
12
8
4
0
0
1
2
3
4
Reverse voltage (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 2
QW-JP023
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
P1
d
T
W
B
F
E
P0
C
A
P
12
o
0
D2
D1
D
W1
SOT-353
SOT-353
SYMBOL
A
B
C
d
D
D1
D2
(mm)
2.25± 0.05
2.55 ± 0.05
1.20 ± 0.05
1.50 + 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.089 ± 0.002
0.100 ± 0.002
0.047 ± 0.002
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.0
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 3
QW-JP023
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
5
Part Number
Marking Code
CPDV5-3V3UP-HF
E3V3
4
E3V3
.
1
2
3
Suggested PAD Layout
C
SOT-353
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.40
0.016
C
1.30
0.051
D
1.94
0.076
E
2.74
0.108
A
D
E
B
Standard Packaging
REEL PACK
Case Type
SOT-353
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 4
QW-JP023
Comchip Technology CO., LTD.
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