Data Sheet

PMPB23XNE
20 V, single N-channel Trench MOSFET
30 November 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• 2.1 kV ESD protection
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated, 100% solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
10.1
A
-
19
22
mΩ
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 7 A; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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PMPB23XNE
NXP Semiconductors
20 V, single N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
Graphic symbol
D
6
7
2
3
8
5
G
4
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa255
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PMPB23XNE
Description
Version
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB23XNE
1K
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-12
12
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
10.1
A
VGS = 4.5 V; Tamb = 25 °C
[1]
-
7
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
4.4
A
-
24
A
-
1.7
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMPB23XNE
Product data sheet
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NXP Semiconductors
20 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
Tamb = 25 °C; t ≤ 5 s
[1]
Tsp = 25 °C
Min
Max
Unit
-
3.5
W
-
12.5
W
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
1.9
A
HBM
[2]
-
2100
V
ESD maximum rating
VESD
electrostatic discharge voltage
[1]
[2]
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Measured between all pins.
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMPB23XNE
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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25
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PMPB23XNE
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa940
102
ID
(A)
tp = 10 µs
Limit RDSon = VDS/ID
10
tp = 100 µs
tp = 1 ms
1
tp = 10 ms
DC; Tsp = 25 °C
10-1
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-2
10-1
1
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
PMPB23XNE
Product data sheet
Min
Typ
Max
Unit
[1]
-
235
270
K/W
[2]
-
67
74
K/W
[2]
-
33
36
K/W
-
5
10
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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PMPB23XNE
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa542
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
1
102
10
103
tp (s)
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
10
0.25
0.2
0.1
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
102
10
103
tp (s)
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.4
0.65
0.9
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
PMPB23XNE
Product data sheet
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PMPB23XNE
NXP Semiconductors
20 V, single N-channel Trench MOSFET
Symbol
Parameter
RDSon
drain-source on-state
resistance
Conditions
Min
Typ
Max
Unit
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; ID = 7 A; Tj = 25 °C
-
19
22
mΩ
VGS = 4.5 V; ID = 7 A; Tj = 150 °C
-
29
34
mΩ
VGS = 2.5 V; ID = 6.1 A; Tj = 25 °C
-
23
29
mΩ
VGS = 1.8 V; ID = 1.9 A; Tj = 25 °C
-
31
44
mΩ
gfs
forward
transconductance
VDS = 10 V; ID = 7 A; Tj = 25 °C
-
50
-
S
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
2.4
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 10 V; ID = 6 A; VGS = 4.5 V;
-
11.6
17
nC
QGS
gate-source charge
Tj = 25 °C
-
1.4
-
nC
QGD
gate-drain charge
-
2.2
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
1136
-
pF
Coss
output capacitance
Tj = 25 °C
-
137
-
pF
Crss
reverse transfer
capacitance
-
112
-
pF
td(on)
turn-on delay time
VDS = 10 V; ID = 6 A; VGS = 4.5 V;
-
9
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
20
-
ns
td(off)
turn-off delay time
-
31
-
ns
tf
fall time
-
32
-
ns
-
0.6
1.2
V
Source-drain diode
VSD
source-drain voltage
IS = 1.9 A; VGS = 0 V; Tj = 25 °C
017aaa941
24
4.5 V
2.5 V
ID
(A)
1.7 V
017aaa942
10-2
ID
(A)
10-3
1.6 V
16
min
1.5 V
typ
max
10-4
1.4 V
8
1.3 V
10-5
VGS = 1.2 V
0
Fig. 6.
0
1
2
3
VDS (V)
4
10-6
0.0
0.4
0.8
VGS (V)
1.2
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Subthreshold drain current as a function of
gate-source voltage
PMPB23XNE
Product data sheet
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PMPB23XNE
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa943
80
RDSon
(mΩ)
1.4 V
60
1.6 V
1.5 V
017aaa944
80
RDSon
(mΩ)
1.8 V
60
1.7 V
40
40
2V
2.5 V
20
0
Tj = 150 °C
20
VGS = 4.5 V
0
8
16
ID (A)
0
24
Tj = 25 °C
Fig. 8.
Tj = 25 °C
0
1
2
3
4
VGS (V)
5
ID = 7 A
Drain-source on-state resistance as a function
of drain current; typical values
Fig. 9.
017aaa945
24
Drain-source on-state resistance as a function
of gate-source voltage; typical values
017aaa946
1.6
a
ID
(A)
1.4
16
1.2
1.0
8
Tj = 150 °C
Tj = 25 °C
0.8
0
0.0
0.5
1.0
1.5
VGS (V)
0.6
-60
2.0
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PMPB23XNE
Product data sheet
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
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PMPB23XNE
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa914
1.2
017aaa947
104
C
(pF)
VGS(th)
(V)
max
Ciss
103
0.8
typ
Coss
102
min
0.4
0.0
-60
0
60
120
Tj (°C)
Crss
10
10-1
180
ID = 0.25 mA; VDS = VGS
1
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
017aaa948
4.5
017aaa949
3
IS
(A)
VGS
(V)
3.0
2
1.5
1
Tj = 150 °C
0.0
0
4
8
QG (nC)
0
0.0
12
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
Product data sheet
0.4
0.6
VSD (V)
0.8
VGS = 0 V
ID = 6 A; VDS = 10 V; Tamb = 25 °C
PMPB23XNE
0.2
Tj = 25 °C
Fig. 15. Source current as a function of source-drain
voltage; typical values
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PMPB23XNE
NXP Semiconductors
20 V, single N-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 16. Duty cycle definition
9. Package outline
0.51
0.61
0.2
0.3
1.9
2.1
1.0
1.2
0.2
0.3
3
4
2
5
1
6
1.1
1.3
1.9
2.1
Dimensions in mm
0.25
0.35
0.65
12-04-30
Fig. 17. Package outline DFN2020MD-6 (SOT1220)
PMPB23XNE
Product data sheet
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20 V, single N-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 18. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
PMPB23XNE
Product data sheet
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20 V, single N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB23XNE v.1
20121130
Product data sheet
-
-
PMPB23XNE
Product data sheet
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PMPB23XNE
NXP Semiconductors
20 V, single N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMPB23XNE
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
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provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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20 V, single N-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
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the product is not suitable for automotive use. It is neither qualified nor
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
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use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMPB23XNE
Product data sheet
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20 V, single N-channel Trench MOSFET
13. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................4
7
Characteristics ....................................................... 5
8
Test information ..................................................... 9
9
Package outline ..................................................... 9
10
Soldering .............................................................. 10
11
Revision history ................................................... 11
12
12.1
12.2
12.3
12.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 November 2012
PMPB23XNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 November 2012
© NXP B.V. 2012. All rights reserved
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