Data Sheet

SO
T8
83
PMZ290UN
20 V, single N-channel Trench MOSFET
6 November 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless and ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
Fast switching
Trench MOSFET technology
Low threshold voltage
Ultra thin package profile with 0.48 mm height
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
1
A
-
290
350
mΩ
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 200 mA; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 1 cm .
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PMZ290UN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
1
2
S
source
2
3
D
drain
Graphic symbol
D
3
Transparent
top view
DFN1006-3 (SOT883)
G
S
017aaa253
6. Ordering information
Table 3.
Ordering information
Type number
PMZ290UN
Package
Name
Description
Version
DFN1006-3
DFN1006-3: leadless ultra small plastic package; 3 solder lands
SOT883
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMZ290UN
ZG
PMZ290UN
Product data sheet
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20 V, single N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
1
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
0.6
A
-
4
A
[2]
-
360
mW
[1]
-
715
mW
-
2700
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.67
A
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 1 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
001aao121
120
Pder
(%)
001aao122
120
Ider
(%)
80
80
40
40
0
-75
Fig. 1.
[1]
-25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMZ290UN
Product data sheet
0
-75
175
Fig. 2.
-25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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20 V, single N-channel Trench MOSFET
aaa-001944
10
ID
(A)
limit RDSon = VDS / ID
1
(1)
(2)
(3)
10-1
(4)
(5)
10-2
10-1
1
10
VDS (V)
102
IDM is single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 °C
(3) tp = 10 ms
(4) tp = 100 ms
2
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
PMZ290UN
Product data sheet
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20 V, single N-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
Min
Typ
Max
Unit
[1]
-
305
360
K/W
[2]
-
150
175
K/W
-
-
40
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
017aaa109
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.25
0.33
0.2
0.1
0
10
10- 3
0.05
0.02
0.01
10- 2
10- 1
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ290UN
Product data sheet
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20 V, single N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 10 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.45
0.7
0.95
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 20 V; VGS = 0 V; Tj = 150 °C
-
-
100
µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
0.1
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
0.1
µA
VGS = 4.5 V; ID = 200 mA; Tj = 25 °C
-
290
350
mΩ
VGS = 4.5 V; ID = 200 mA; Tj = 150 °C
-
460
560
mΩ
VGS = 2.5 V; ID = 100 mA; Tj = 25 °C
-
360
450
mΩ
VGS = 1.8 V; ID = 75 mA; Tj = 25 °C
-
460
650
mΩ
VDS = 5 V; ID = 200 mA; Tj = 25 °C
-
2
-
S
total gate charge
VDS = 10 V; ID = 1 A; VGS = 4.5 V;
-
0.89
1.2
nC
QGS
gate-source charge
Tj = 25 °C
-
0.13
-
nC
QGD
gate-drain charge
-
0.18
-
nC
Ciss
input capacitance
VDS = 20 V; f = 1 MHz; VGS = 0 V;
-
45
68
pF
Coss
output capacitance
Tj = 25 °C
-
11
-
pF
Crss
reverse transfer
capacitance
-
7
-
pF
td(on)
turn-on delay time
VDS = 10 V; RL = 10 Ω; VGS = 4.5 V;
-
4.5
9
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
10
-
ns
td(off)
turn-off delay time
-
18.5
37
ns
tf
fall time
-
5
-
ns
-
0.75
1.2
V
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMZ290UN
Product data sheet
IS = 300 mA; VGS = 0 V; Tj = 25 °C
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NXP Semiconductors
20 V, single N-channel Trench MOSFET
aaa-001945
2.0
(1)
ID
(A)
03am43
10- 3
(2)
ID
(A)
(3)
1.5
10- 4
(4)
min
typ
max
1.0
0.5
0
10- 5
(5)
0
1
2
3
VDS (V)
10- 6
4
Tj = 25 °C
Fig. 7.
(1) VGS = 4.5 V
0
0.4
0.8
VGS (V)
1.2
Sub-threshold drain current as a function of
gate-source voltage
(2) VGS = 2.5 V
(3) VGS = 2.0 V
(4) VGS = 1.8 V
(5) VGS = 1.5 V
Fig. 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-001946
1.0
aaa-001947
1.0
RDSon
(Ω)
RDSon
(Ω)
0.8
0.8
(1)
0.6
0.6
(2)
(3)
0.4
(1)
0.4
(2)
(4)
(5)
0.2
0
0
0.5
1.0
0.2
1.5
ID (A)
0
2.0
1
Tj = 25 °C
ID = 800 mA
(1) VGS = 1.8 V
(1) Tj = 150 °C
(2) VGS = 2 V
(2) Tj = 25 °C
(3) VGS = 2.5 V
Fig. 9.
(4) VGS = 3 V
(5) VGS = 4.5 V
Fig. 8.
0
2
3
4
VGS (V)
5
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Drain-source on-state resistance as a function
of drain current; typical values
PMZ290UN
Product data sheet
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NXP Semiconductors
20 V, single N-channel Trench MOSFET
aaa-001948
2.0
ID
(A)
003aac024
2.0
a
(1)
(2)
1.5
1.5
1.0
1.0
0.5
0.5
(2)
0
0
(1)
1
2
VGS (V)
0
- 60
3
VDS > ID x RDSon
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03aj65
1.2
03an06
102
VGS(th)
(V)
0.9
max
typ
0.6
Ciss
C
(pF)
Coss
10
Crss
min
0.3
0
- 60
0
60
120
Tj (°C)
1
10- 1
180
ID = 0.25 mA; VDS = VGS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMZ290UN
Product data sheet
1
10
VDS (V)
102
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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20 V, single N-channel Trench MOSFET
03an07
5
VDS
ID = 1 A
Tj = 25 °C
VDS = 10 V
VGS
(V)
4
ID
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
003aaa508
0
0
0.2
0.4
0.6
Fig. 15. Gate charge waveform definitions
0.8
1
QG (nC)
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-001949
1.0
IS
(A)
0.8
(1)
0.6
(2)
0.4
0.2
0
0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
PMZ290UN
Product data sheet
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20 V, single N-channel Trench MOSFET
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMZ290UN
Product data sheet
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20 V, single N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT883
JEITA
SC-101
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
Fig. 18. Package outline DFN1006-3 (SOT883)
PMZ290UN
Product data sheet
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20 V, single N-channel Trench MOSFET
13. Soldering
1.3
0.7
R0.05 (12×)
solder lands
0.9
0.6
solder resist
0.7
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.3
0.4
(2×)
0.4
Dimensions in mm
sot883_fr
Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883)
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMZ290UN v.1
20131106
Product data sheet
-
-
PMZ290UN
Product data sheet
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NXP Semiconductors
20 V, single N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMZ290UN
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
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inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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in the customer’s applications or products, or the application or use by
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Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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20 V, single N-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
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In the event that customer uses the product for design-in and use in
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMZ290UN
Product data sheet
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20 V, single N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 6
11
Test information ................................................... 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 6 November 2013
PMZ290UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
© NXP N.V. 2013. All rights reserved
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