SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1000 mW 3. Applications • • • • LED driver Power management Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -12 - 12 V ID drain current - - 4.4 A - 36 44 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 3.7 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 TO-236AB (SOT23) G S 017aaa253 6. Ordering information Table 3. Ordering information Type number PMV40UN2 Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PMV40UN2 %K8 [1] PMV40UN2 Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -12 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 4.4 A VGS = 4.5 V; Tamb = 25 °C [1] - 3.7 A VGS = 4.5 V; Tamb = 100 °C [1] - 2.3 A - 16 A [2] - 490 mW [1] - 1000 mW - 5000 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.9 A Source-drain diode IS source current PMV40UN2 Product data sheet Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 MOSFET transistor: Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 175 MOSFET transistor: Normalized continuous drain current as a function of junction temperature aaa-012403 102 ID (A) Tj (°C) Limit RDSon = VDS/ID tp = 10 µs 10 tp = 100 µs 1 tp = 1 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-1 tp = 10 ms DC; Tsp = 25 °C 10-2 10-1 1 tp = 100 ms 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air PMV40UN2 Product data sheet t≤5s All information provided in this document is subject to legal disclaimers. 24 April 2014 Min Typ Max Unit [1] - 217 255 K/W [2] - 105 124 K/W [2] - 73 86 K/W © NXP Semiconductors N.V. 2014. All rights reserved 4 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point [1] [2] Conditions Min Typ Max Unit - 20 25 K/W Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . aaa-012832 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 10 0.75 0.33 0.2 0.05 0.02 0 0.01 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-012833 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.25 0.1 10 0 1 10- 3 0.5 0.2 0.05 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV40UN2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 4.5 V; ID = 3.7 A; Tj = 25 °C - 36 44 mΩ VGS = 4.5 V; ID = 3.7 A; Tj = 150 °C - 62 75 mΩ VGS = 2.5 V; ID = 3.4 A; Tj = 25 °C - 43 53 mΩ VGS = 1.8 V; ID = 0.5 A; Tj = 25 °C - 56 78 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 2 A; Tj = 25 °C - 10.9 - S RG gate resistance f = 1 MHz; Tj = 25 °C - 8.7 - Ω total gate charge VDS = 15 V; ID = 3.7 A; VGS = 4.5 V; - 7 12 nC QGS gate-source charge Tj = 25 °C - 0.9 - nC QGD gate-drain charge - 1.7 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 635 - pF Coss output capacitance Tj = 25 °C - 40 - pF Crss reverse transfer capacitance - 35 - pF td(on) turn-on delay time VDS = 15 V; ID = 3.7 A; VGS = 4.5 V; - 9 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 23 - ns td(off) turn-off delay time - 34 - ns tf fall time - 12 - ns - 0.7 1.2 V Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMV40UN2 Product data sheet IS = 0.9 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-012404 16 4.5 V ID (A) 3.0 V 12 ID (A) 1.8 V 2.2 V aaa-012405 10-3 2.0 V 2.5 V min 10-4 8 typ max 1.5 V 10-5 4 VGS = 1.2 V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 0.5 1 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Fig. 7. Output characteristics: drain current as a function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-012406 0.3 1.2 V RDSon (Ω) aaa-012407 0.3 1.5 V RDSon (Ω) 1.3 V 0.2 0.2 1.8 V 2.0 V 0.1 0.1 Tj = 150 °C VGS = 4.5 V 0 0 4 8 2.5 V 12 Tj = 25 °C 2.2 V ID (A) 0 16 Tj = 25 °C Fig. 8. Product data sheet 1 2 3 4 VGS (V) 5 ID = 3.7 A Drain-source on-state resistance as a function of drain current; typical values PMV40UN2 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-012408 16 aaa-012409 2 ID (A) a 12 1.5 8 1 Tj = 25 °C 4 0 0.5 Tj = 150 °C 0 1 2 VGS (V) 0 -60 3 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 Ciss C (pF) 1.0 102 min Coss Crss typ 0.5 0 -60 10 max 0 60 120 Tj (°C) 1 10-1 180 ID = 250 µA; VDS = VGS Product data sheet 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV40UN2 180 aaa-012411 103 VGS(th) (V) Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-012410 1.5 0 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-012413 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 2 4 6 QG (nC) Fig. 15. MOSFET transistor: Gate charge waveform definitions 8 ID = 3.7 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-012412 5 IS (A) 4 Tj = 150 °C 3 2 Tj = 25 °C 1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMV40UN2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) PMV40UN2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) PMV40UN2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 15 PMV40UN2 NXP Semiconductors 30 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV40UN2 v.1 20140424 Product data sheet - - PMV40UN2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 April 2014 PMV40UN2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 15 / 15