BC846AW-G

Small Signal Transistor
BC846W-G Thru. BC848W-G (NPN)
RoHS Device
Features
- Power dissipation
PCM: 0.15W (@TA=25°C)
- Collector current
ICM: 0.1A
- Collector-base voltage
VCBO: BC846W=80V
BC847W=50V
BC848W=30V
SOT-323
0.087(2.20)
0.079(2.00)
3
0.053(1.35)
0.045(1.15)
Mechanical data
2
1
0.055(1.40)
0.047(1.20)
- Case: SOT-323, molded plastic.
- Terminals: solderable per MIL-STD-750,
method 2026.
- Approx. weight: 0.008 grams
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.096(2.45)
0.085(2.15)
Circuit diagram
- 1.BASE
- 2.EMITTER
- 3.COLLECTOR
0.016(0.40)
0.008(0.20)
0.004(0.10)
0.000(0.00)
3
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
1
2
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Units
Collector-Base voltage
BC846W-G
BC847W-G
BC848W-G
VCBO
80
50
30
V
Collector-Emitter voltage
BC846W-G
BC847W-G
BC848W-G
VCEO
65
45
30
V
Emitter-Base voltage
BC846W-G / BC847W-G
BC848W-G
VEBO
6
5
V
Collector current -continuous
IC
0.1
A
Collector power dissipation
PC
150
mW
Thermal resistance from junction to ambient
RΘJA
833
°C/W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 1
QW-BTR35
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
Unit
Collector-base breakdown voltage
BC846W-G
BC847W-G
BC848W-G
VCBO
IC = 10μA , IE = 0
80
50
30
V
Collector-emitter breakdown voltage
BC846W-G
BC847W-G
BC848W-G
VCEO
IC = 10mA , IB = 0
65
45
30
V
BC846W-G, BC847W-G
BC848W-G
VEBO
IE = 1μA , IC = 0
6
5
V
ICBO
VCB = 30V
Emitter-base break voltage
Collector cutoff current
DC current gain
BC846AW-G, 847AW-G, 848AW-G
BC846BW-G, 847BW-G, 848BW-G
BC847CW-G, 848CW-G
BC846AW-G, 847AW-G, 848AW-G
BC846BW-G, 847BW-G, 848BW-G
BC847CW-G, 848CW-G
15
90
150
270
VCE = 5V , IC = 10μA
hFE
VCE = 5V , IC = 2mA
nA
220
450
800
110
200
420
Collector-emitter saturation voltage
VCE(sat)
IC = 10mA , IB = 0.5mA
IC = 100mA ,IB = 5mA
Base-emitter saturation voltage
VBE(sat)
IC = 10mA , IB = 0.5mA
IC = 100mA , IB = 5mA
Base-emitter voltage
VBE(on)
VCE = 5V , IC = 2mA
VCE = 5V , IC = 10mA
Transition frequency
fT
VCE = 5V , IC = 10mA
f = 100MHZ
Cob
VCB = 10V , f = 1MHZ
4.5
pF
NF
VCE = 5V , IC = 0.2mA
f = 1KHZ , RS = 2KΩ
BW = 200Hz
10
10
4
dB
Collector output capacitance
Noise figure
BC846AW-G, 847AW-G, 848AW-G
BC846BW-G, 847BW-G, 848BW-G
BC847CW-G, 848CW-G
Company reserves the right to improve product design , functions and reliability without notice.
0.25
0.60
0.7
0.9
580
660
V
V
700
770
100
mV
MHZ
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Page 2
QW-BTR35
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC846W-G Thru. BC848W-G)
Fig.2 - hFE — IC
Fig.1 - Static Characteristic
3000
10
COMMON
-500uA
EMITTER
-450uA
Ta=25°C
1000
DC Current Gain, hFE
Collector Current, IC (mA)
8
IB=20uA
IB=18uA
IB=16uA
6
IB=14uA
IB=12uA
4
IB=10uA
IB=8uA
100
IB=6uA
2
COMMON
-500uA
EMITTER
-450uA
VCE=5V
IB=4uA
IB=2uA
10
0
0
1
2
3
5
4
6
7
1
Collector Current , IC (mA)
Fig.4 - VCEsat — IC
Collector- Emitter Saturation Voltage, (mV)
Fig.3 - VBEsat — IC
1000
Base-Emitter Saturation Voltage
, VBEsat (mV)
β=20
800
600
400
200
0.1
1
10
500
β=20
100
10
0.1
100
10
1
Collector Current, IC (mA)
100
Collector Current, IC (mA)
Fig.5 - IC — VBE
Fig.6 - FT — IC
100
0°
C
Transition frequency, fT (MHZ)
500
25
Ta=
10
°C
Ta
=1
0
Collector Current, IC (mA)
100
10
Collector-Emitter Voltage, VCE (V)
1
COMMON
-500uA
EMITTER
-450uA
VCE=5V
0.1
0
400
600
800
100
COMMON
-500uA
EMITTER
-450uA
V
CE =5V
Ta=25°C
10
0.25
2
Base-Emitter Voltage, VBE (mV)
Company reserves the right to improve product design , functions and reliability without notice.
4
6
8
10
12
Collector Current , IC (mA)
REV:B
Page 3
QW-BTR35
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC846W-G Thru. BC848W-G)
Fig.7 - Cob/Cib
Fig.8 - PC — Ta
— VCB/VEB
100
200
Collector Power Dissipation,
P C (mW)
Capacitance, C ( pF )
f=1MHz
IE = 0/Ic =0
Ta = 25°C
Cib
10
Cob
1.0
0.1
0.1
150
100
50
0
1
10
30
0
Reverse Voltage, V ( V )
25
50
75
100
125
150
Ambient Temperature, Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 4
QW-BTR35
Comchip Technology CO., LTD.
Small Signal Transistor
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-323
SOT-323
SYMBOL
A
B
C
d
D
D1
D2
(mm)
2.25 ± 0.05
2.55 ± 0.05
1.19 ± 0.05
1.55 + 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.089 ± 0.002
0.100 ± 0.002
0.047 ± 0.002
0.061 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30
- 0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.158 ± 0.004
0.158 ± 0.004
0.079 ± 0.004
0.315 + 0.012
- 0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 5
QW-BTR35
Comchip Technology CO., LTD.
Small Signal Schottky Diodes
Marking Code
Part Number
Marking Code
BC846AW-G
1A
BC847AW-G
1E
BC848AW-G
1J
BC846BW-G
1B
BC847BW-G
1F
BC848BW-G
1K
BC847CW-G
1G
BC848CW-G
1L
3
XX
1
2
xx = Product type marking code
Suggested PAD Layout
E
SOT-323
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.30
0.051
C
2.20
0.087
D
3.00
0.118
E
0.50
0.020
A
C
D
B
Standard Packaging
Case Type
SOT-323
Qty per Reel
Reel Size
(Pcs)
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 6
QW-BTR35
Comchip Technology CO., LTD.
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