Small Signal Transistor BC846W-G Thru. BC848W-G (NPN) RoHS Device Features - Power dissipation PCM: 0.15W (@TA=25°C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V SOT-323 0.087(2.20) 0.079(2.00) 3 0.053(1.35) 0.045(1.15) Mechanical data 2 1 0.055(1.40) 0.047(1.20) - Case: SOT-323, molded plastic. - Terminals: solderable per MIL-STD-750, method 2026. - Approx. weight: 0.008 grams 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.096(2.45) 0.085(2.15) Circuit diagram - 1.BASE - 2.EMITTER - 3.COLLECTOR 0.016(0.40) 0.008(0.20) 0.004(0.10) 0.000(0.00) 3 0.018(0.46) 0.010(0.26) Dimensions in inches and (millimeter) 1 2 Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Units Collector-Base voltage BC846W-G BC847W-G BC848W-G VCBO 80 50 30 V Collector-Emitter voltage BC846W-G BC847W-G BC848W-G VCEO 65 45 30 V Emitter-Base voltage BC846W-G / BC847W-G BC848W-G VEBO 6 5 V Collector current -continuous IC 0.1 A Collector power dissipation PC 150 mW Thermal resistance from junction to ambient RΘJA 833 °C/W Junction temperature range TJ 150 °C Storage temperature range TSTG -55 to +150 °C Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-BTR35 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristics (at TA=25°C unless otherwise noted) Symbol Parameter Test Conditions MIN TYP MAX Unit Collector-base breakdown voltage BC846W-G BC847W-G BC848W-G VCBO IC = 10μA , IE = 0 80 50 30 V Collector-emitter breakdown voltage BC846W-G BC847W-G BC848W-G VCEO IC = 10mA , IB = 0 65 45 30 V BC846W-G, BC847W-G BC848W-G VEBO IE = 1μA , IC = 0 6 5 V ICBO VCB = 30V Emitter-base break voltage Collector cutoff current DC current gain BC846AW-G, 847AW-G, 848AW-G BC846BW-G, 847BW-G, 848BW-G BC847CW-G, 848CW-G BC846AW-G, 847AW-G, 848AW-G BC846BW-G, 847BW-G, 848BW-G BC847CW-G, 848CW-G 15 90 150 270 VCE = 5V , IC = 10μA hFE VCE = 5V , IC = 2mA nA 220 450 800 110 200 420 Collector-emitter saturation voltage VCE(sat) IC = 10mA , IB = 0.5mA IC = 100mA ,IB = 5mA Base-emitter saturation voltage VBE(sat) IC = 10mA , IB = 0.5mA IC = 100mA , IB = 5mA Base-emitter voltage VBE(on) VCE = 5V , IC = 2mA VCE = 5V , IC = 10mA Transition frequency fT VCE = 5V , IC = 10mA f = 100MHZ Cob VCB = 10V , f = 1MHZ 4.5 pF NF VCE = 5V , IC = 0.2mA f = 1KHZ , RS = 2KΩ BW = 200Hz 10 10 4 dB Collector output capacitance Noise figure BC846AW-G, 847AW-G, 848AW-G BC846BW-G, 847BW-G, 848BW-G BC847CW-G, 848CW-G Company reserves the right to improve product design , functions and reliability without notice. 0.25 0.60 0.7 0.9 580 660 V V 700 770 100 mV MHZ REV:B Page 2 QW-BTR35 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristic Curves (BC846W-G Thru. BC848W-G) Fig.2 - hFE — IC Fig.1 - Static Characteristic 3000 10 COMMON -500uA EMITTER -450uA Ta=25°C 1000 DC Current Gain, hFE Collector Current, IC (mA) 8 IB=20uA IB=18uA IB=16uA 6 IB=14uA IB=12uA 4 IB=10uA IB=8uA 100 IB=6uA 2 COMMON -500uA EMITTER -450uA VCE=5V IB=4uA IB=2uA 10 0 0 1 2 3 5 4 6 7 1 Collector Current , IC (mA) Fig.4 - VCEsat — IC Collector- Emitter Saturation Voltage, (mV) Fig.3 - VBEsat — IC 1000 Base-Emitter Saturation Voltage , VBEsat (mV) β=20 800 600 400 200 0.1 1 10 500 β=20 100 10 0.1 100 10 1 Collector Current, IC (mA) 100 Collector Current, IC (mA) Fig.5 - IC — VBE Fig.6 - FT — IC 100 0° C Transition frequency, fT (MHZ) 500 25 Ta= 10 °C Ta =1 0 Collector Current, IC (mA) 100 10 Collector-Emitter Voltage, VCE (V) 1 COMMON -500uA EMITTER -450uA VCE=5V 0.1 0 400 600 800 100 COMMON -500uA EMITTER -450uA V CE =5V Ta=25°C 10 0.25 2 Base-Emitter Voltage, VBE (mV) Company reserves the right to improve product design , functions and reliability without notice. 4 6 8 10 12 Collector Current , IC (mA) REV:B Page 3 QW-BTR35 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristic Curves (BC846W-G Thru. BC848W-G) Fig.7 - Cob/Cib Fig.8 - PC — Ta — VCB/VEB 100 200 Collector Power Dissipation, P C (mW) Capacitance, C ( pF ) f=1MHz IE = 0/Ic =0 Ta = 25°C Cib 10 Cob 1.0 0.1 0.1 150 100 50 0 1 10 30 0 Reverse Voltage, V ( V ) 25 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 4 QW-BTR35 Comchip Technology CO., LTD. Small Signal Transistor Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-323 SOT-323 SYMBOL A B C d D D1 D2 (mm) 2.25 ± 0.05 2.55 ± 0.05 1.19 ± 0.05 1.55 + 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.089 ± 0.002 0.100 ± 0.002 0.047 ± 0.002 0.061 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 - 0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 5 QW-BTR35 Comchip Technology CO., LTD. Small Signal Schottky Diodes Marking Code Part Number Marking Code BC846AW-G 1A BC847AW-G 1E BC848AW-G 1J BC846BW-G 1B BC847BW-G 1F BC848BW-G 1K BC847CW-G 1G BC848CW-G 1L 3 XX 1 2 xx = Product type marking code Suggested PAD Layout E SOT-323 SIZE (mm) (inch) A 0.80 0.031 B 1.30 0.051 C 2.20 0.087 D 3.00 0.118 E 0.50 0.020 A C D B Standard Packaging Case Type SOT-323 Qty per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 6 QW-BTR35 Comchip Technology CO., LTD.