CJ2324-G

Comchip
MOSFET
SMD Diode Specialist
CJ2324-G (N-Channel MOSFET )
RoHS Device
V(BR)DSS
RDS(on)MAX
ID
SOT-23
234mΩ @ 10V
267mΩ @ 6V
100V
2A
0.118(3.00)
0.110(2.80)
278mΩ @ 4.5V
3
0.055(1.40)
0.047(1.20)
Features
1
2
0.079(2.00)
0.071(1.80)
- TrenchFET Power MOSFET
- Low RDS(ON).
- Surface mount package.
0.007(0.150)
0.002(0.080)
0.041(1.05)
0.035(0.90)
Mechanical data
0.100(2.55)
0.089(2.25)
- Case: SOT-23, molded plastic.
0.020(0.50)
0.012(0.30)
Circuit diagram
3
1
D
Dimensions in inches and (millimeter)
1. GATE
2. SOURCE
3. DRAIN
G
S
2
Absolute Maximum Ratings (at Ta=25 °C unless otherwise noted)
Symbol
Value
Unit
Drain-source voltage
VDS
100
V
Gate-source voltage
VGS
±20
V
Continuous drain current
ID
2
A
Pulsed drain current
IDM*
8
A
Power dissipation
PD
350
mW
RΘJA
357
°C/W
Junction temperature
TJ
-40 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
TL
260
°C
Parameter
Thermal resistance from junction to ambient
Lead temperature for soldering purposes(1/8” form case for 10 s)
* Repetitive rating: Pulse width limited by junction temperature.
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Comchip
MOSFET
SMD Diode Specialist
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Typ
Max
Units
Conditions
Min
V(BR) DSS
VGS = 0V , ID = 250µA
100
Zero gate voltage drain current
IDSS
VDS = 100V , VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS = ±20V, VDS = 0V
±100
nA
VGS(th)
VDS = VGS , ID = 250µA
2.8
V
STATIC PARAMETERS
Drain-source breakdown voltage
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
RDS(on)
V
1.2
VGS = 10V , ID = 1.5A
234
VGS = 6V , ID = 1A
267
VGS = 4.5V , ID = 0.5A
278
Forward transconductance (note 1)
gFS
VDS = 20V , ID = 1.5A
Diode forward voltage (note 1)
VSD
IS = 1.3A , VGS = 0V
mΩ
S
2
1.2
V
DYNAMIC PARAMETERS (note2)
Input capacitance
ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate resistance
Rg
190
VDS=50V , VGS=0V, f=1MHZ
pF
22
13
F=1MHZ
0.3
2.8
Ω
SWITCHING PARAMETERS (note2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
td(on)
tr
td(off)
45
39
VDD=50V, VGEN=4.5V
nS
RL=39Ω , RG=1Ω, ID=1.3A
26
Turn-on fall time
tf
20
Total gate charge
Qg
5.8
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDS=50V , VGS=4.5V
ID=1.6A
0.75
nC
1.4
Note:
1. Pulse test : Pulse width≤300µs, duty cycle≤0.5% .
2. Guaranteed by design, not subject to production testing.
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip
MOSFET
SMD Diode Specialist
TYPICAL CHARACTERISTICS ( CJ2324-G )
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
5.0
10
Pulsed
4.0
8
VGS=10V,12V
VGS=8V
7
Drain Current, ID (A)
Dran Current, ID (A)
VDS = 3V
Pulsed
4.5
9
VGS=3.8V
6
5
VGS=3.5V
4
3
3.5
3.0
2.5
Ta=100°C
2.0
1.5
1.0
2
VGS=3V
0.5
1
0
0
0
1
3
2
0
5
4
1
2
4
3
5
6
Gate to Source Voltage, VGS (V)
Drain to Soruce Voltage, VDS (V)
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
280
900
Ta=25°C
Pulsed
800
260
ON-Resistance, RDS(ON) ( mΩ )
ON-Resistance, RDS(ON) ( mΩ )
Ta=25°C
240
VGS=4.5V
220
200
VGS=10V
VGS=6V
700
600
ID=0.8A
500
Ta=100°C
Pulsed
400
300
Ta=25°C
Pulsed
200
180
100
160
1
0
2
3
4
0
5
0
Drain Current, ID (A)
6
4
2
8
10
Gate To Source Voltage, VGS (V)
Fig.6 - Threshold Voltage
Fig.5 - IS — VSD
6
2.1
2.0
Threshold Voltage, VTH ( V )
Source Current, Is ( A )
1
Ta=100°C
Pulsed
0.1
Ta=25°C
Pulsed
0.01
1.9
1.8
ID=250uA
1.7
1.6
1.5
1E-3
1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
Source to Drain Voltage, VSD (mV)
50
75
100
125
Junction Temperature, TJ (°C)
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
SMD Diode Specialist
Reel Taping Specification
P1
B
F
E
d
P0
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 + 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.158 ± 0.004
0.158 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip
MOSFET
SMD Diode Specialist
Marking Code
3
Part Number
Marking Code
CJ2324-G
S24
XXX
1
2
xxx = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.60
0.024
C
1.90
0.075
D
2.02
0.080
E
2.82
0.111
A
D
E
C
Standard Packaging
Case Type
SOT-23
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Comchip Technology CO., LTD.
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