CJ3134K-HF

MOSFET
CJ3134K-HF
N-Channel
RoHS Device
Halogen Free
V(BR)DSS
SOT-723
ID
RDS(ON)MAX
[email protected]
20V
[email protected]
0.011(0.27)
0.007(0.17)
0.75A
1
[email protected]
0.049(1.25) 0.031(0.80)
0.045(1.15)
3
Typ.
Features
0.015(0.37)
0.011(0.27)
2
0.033(0.85)
0.030(0.75)
- Lead free product is acquired
- Surface mount package
0.049(1.25)
0.045(1.15)
- N-Channel switch with low RDS(on)
- Operated at low logic level gate drive
0.020(0.50)
0.017(0.43)
0.002(0.05)
0.000(0.00)
Mechanical data
0.006(0.15)
0.003(0.08)
- Case: SOT-723, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
Dimensions in inches and (millimeter)
Circuit Diagram
D
1. G : Gate
2. S : Source
3. D : Drain
G
S
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Value
Unit
Drain-Source voltage
VDS
20
V
Typical Gate-Source voltage
VGS
±12
V
ID
0.75
Pulsed drain current (tp=10µs)
IDM
1.8
Power dissipation (note1)
PD
150
mW
RΘJA
833
°C/W
Junction temperature
TJ
150
°C
Storage temperature
TSTG
-55 to +150
°C
TL
260
°C
Parameter
Continuous drain current (note1)
A
Thermal resistance from junction to ambient (note1)
Lead temperature for soldering purposes (1/8” from case for 10 s)
Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size.
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
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Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR) DSS
VGS =0V , ID=250µA
Zero gate voltage drain current
IDSS
VDS =20V , VGS=0V
1
µA
Gate-body leakage current
IGSS
VGS=±10V , VDS =0V
±20
µA
VGS(th)
VDS =VGS , ID=250µA
0.54
1.1
V
VGS=4.5V , ID=0.65A
270
380
VGS=2.5V , ID=0.55A
320
450
VGS=1.8V , ID=0.45A
390
800
1.6
Gate threshold voltage (note 2)
Drain-source on-state resistance (note 2)
RDS(on)
Forward transconductance (note 2)
gFS
VDS=10V , ID=0.8A
Diode forward voltage
VSD
IS=0.15A , VGS=0V
20
0.35
V
mΩ
S
1.2
V
Dynamic Characteristics (note 4)
Input capacitance
ciss
Output capacitance
Coss
Reverse transfer capacitance
79
120
13
20
Crss
9
15
td(on)
6.7
VDS=16V , VGS=0V, f=1MHZ
pF
Switching Characteristics (note 4)
Turn-on delay time (note 3)
Turn-on rise time (note 3)
tr
VGS=4.5V , VDS=10V
4.8
ID=500mA , RGEN=10Ω
17.3
nS
Turn-off delay time (note 3)
td(off)
tf
Turn-off fall time (note 3)
7.4
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse test: Pulse width=300µs, Duty cycle=2%
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
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MOSFET
RATING AND CHARACTERISTIC CURVES (CJ3134K-HF)
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
5.0
VGS=4V, 5V
Pulsed
TA=25°C
4.5
4.0
VGS=3V
VDS=3V
Pulsed
3.5
4.0
3.0
Drain Current, ID (A)
Drain Current, ID (A)
VGS=2.5V
3.5
3.0
VGS=2V
2.5
2.0
1.5
TA=100°C
2.5
TA=25°C
2.0
1.5
1.0
1.0
VGS=1.5V
0.5
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
0
Drain to Soruce Voltage, VDS (V)
1
3
4
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
500
800
Pulsed
Pulsed
TA=25°C
450
700
ON-Resistance, RDS(ON) (mΩ)
ON-Resistance, RDS(ON) (mΩ)
2
Gate to Source Voltage, VGS (V)
VGS=1.8V
400
350
VGS=2.5V
300
VGS=4.5V
250
ID=0.65A
600
500
TA=100°C
400
300
TA=25°C
200
200
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1
Drain Current, ID (A)
2
3
4
5
Gate to Source Voltage, VGS (V)
Fig.5 - IS — VSD
Fig.6 - Threshold Voltage
0.8
2
Pulsed
0.7
Threshold Voltage, VTH (V)
Source Current, IS (A)
1
TA=100°C
TA=25°C
0.1
0.6
ID=250μA
0.5
0.4
0.3
0.01
0.0
0.2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
Source to Drain Voltage, VSD (V)
50
75
100
125
Junction Temperature, TJ (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
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Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P1
d
P0
W
B
F
E
T
C
12
o
0
D2
D1 D
W1
Trailer Tape
Leader Tape
100±4 Empty Pockets
200±4 Empty Pockets
Components
End
SOT-723
SOT-723
Start
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.33 ± 0.05
1.45 ± 0.05
0.61 ± 0.05
1.50 ± 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.052 ± 0.002
0.057 ± 0.002
0.024 ± 0.002
0.059 + 0.004
7.008 ± 0.078
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
2.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.079 ± 0.004
0.158 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
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Comchip Technology CO., LTD.
MOSFET
Marking Code
3
Part Number
Marking Code
CJ3134K-HF
KF
KF
1
2
Solid dot “ ” = Halogen Free
Suggested PAD Layout
A
SOT-723
SIZE
(mm)
(inch)
A
0.42
0.017
B
0.30
0.012
C
0.30
0.012
D
0.32
0.013
E
0.80
0.031
F
1.00
0.039
B
F
C
D
Note:
1.General tolerance: ±0.05mm.
2.The pad layout is for reference purposes only.
E
Standard Packaging
REEL PACK
Case Type
SOT-723
REEL
Reel Size
( pcs )
(inch)
8,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 5
QW-JTR14
Comchip Technology CO., LTD.
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