CJ3139KDW-G

Comchip
MOSFET
SMD Diode Specialist
CJ3139KDW-G (Dual P-Channel )
RoHS Device
SOT-363
V(BR)DSS
RDS(on)MAX
0.087(2.20)
0.079(2.00)
ID
520mΩ @ -4.5V
-20V
700mΩ @ -2.5V
6
5
4
1
2
3
0.053(1.35)
0.045(1.15)
-0.66A
950mΩ(TYP) @ -1.8V
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.045(1.15)
0.041(1.05)
0.096(2.45)
0.085(2.15)
Features
- High-side switching
0.018(0.46)
0.010(0.26)
0.004(0.10)
0.000(0.00)
0.014(0.35)
0.006(0.15)
- Low on-resistance
- Low threshold
Dimensions in inches and (millimeter)
- Fast switching speed
Circuit diagram
Mechanical data
G : Gate
S : Source
D : Drain
- Case: SOT-363, molded plastic.
D1
6
G2
S2
4
5
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Weight: 0.006 grams (approx.)
3
2
1
S1
G1
D2
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Symbol
Value
Unit
Drain-source voltage
VDSS
-20
V
Typ. Gate-source voltage
VGS
±12
V
Drain current-Continuous
ID(DC)
-0.66
A
IDM(pulse)
-2.64
A
PD
150
mW
RΘJA
833
°C/W
Junction temperature range
TJ
-40 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Parameter
Drain current-pulsed (note1)
Power dissipation (note 2)
Thermal resistance from junction to ambient
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MOSFET
SMD Diode Specialist
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
On/Off States
Drain-source breakdown voltage
Gate threshold voltage (note 3)
V(BR) DSS
VGS = 0V , ID = -250µA
-20
VGS(th)
VDS = VGS , ID = -250µA
-0.35
V
-1.1
V
Gate-body leakage current
IGSS
VGS = ±10V, VDS = 0V
±20
µA
Zero gate voltage drain current
IDSS
VDS = -20V , VGS = 0V
-1
µA
VGS = -4.5V , ID = -1A
520
VGS = -2.5V , ID = -800mA
700
Drain-source on-state resistance (note 3)
RDS(on)
VGS = -1.8V , ID = -500mA
Forward transconductance
gfs
VDS = -10V , ID = -540mA
mΩ
950
0.8
S
Dynamic characteristics (note 4)
Input capacitance
ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
170
VDS = -16V , VGS = 0V
25
f=1MHZ
pF
15
Switching time (note4)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
9
VDD = -10V, ID = -200mA
5.8
VGS = -4.5V, RG = 10Ω
32.7
nS
20.3
tf
Drain-source diode characteristics
Drain-source diode forward voltage
(note 3)
VSD
IS = -0.5A , VGS = 0V
-1.2
V
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperture.
2. This test is performed with no heat sink at Ta=25°C.
3. Pulse test: Pulse width≤300µs, Duty cycle≤0.5%.
4. These parameters have no way to verify.
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (CJ3139KDW-G)
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
-2.0
-3.0
VDS = -5V
VGS= -10V
Pulsed
VGS= -4.5V
-2.5
-1.6
Ta=25°C
Drain Current, ID (A)
Drain Current, ID (A)
VGS= -3V
-2.0
VGS= -2.5V
-1.5
-1.0
-1.2
Ta=100°C
-0.8
-0.4
-0.5
VGS= -1.5V
-0.0
-0.0
0
-1
-3
-2
-4
-0
-5
-0.5
-1.0
-2.5
2.0
On-Resistance, RDS(ON) ( Ω )
VGS= -1.8V
1.6
1.2
VGS= -2.5V
0.8
0.4
VGS= -4.5V
1.6
1.2
0.8
0.4
0
-0.4
-0.8
-1.2
Ta=25°C
Pulsed
ID = -0.8A
0.0
0
-3.0
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
2.0
On-Resistance, RDS(ON) ( Ω )
-2.0
-1.5
Gate to Source Voltage, VGS (V)
Drain to Source Voltage, VDS (V)
-1.6
-2.0
-1
Drain Current, ID (A)
-3
-2
-4
-5
-6
Gate to Source Voltage, VGS (V)
Fig.6 - Threshold Voltage
Fig.5 - IS — VSD
-3
-0.8
Threshold Voltage, VTH ( V )
Source Current, Is ( A )
-1
-0.1
-0.01
-1E-3
-1E-4
-0.4
-0.8
-1.2
-1.6
-2.0
-0.7
ID = -250uA
-0.6
-0.5
-0.4
25
Source to Drain Voltage, VSD (V)
50
75
100
125
Junction Temperature, TJ (°C)
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MOSFET
SMD Diode Specialist
Reel Taping Specification
P1
W
B
F
E
d
P0
C
A
P
12
o
0
D2
D1
D
W1
SOT-363
SOT-363
SYMBOL
A
B
C
d
D
D1
D2
(mm)
2.25 ± 0.05
2.55 ± 0.05
1.20 ± 0.05
1.50 ± 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.089 ± 0.002
0.100 ± 0.002
0.047 ± 0.002
0.059 ± 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30/-0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012/-0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
Marking Code
6
Part Number
Marking Code
CJ3139KDW-G
39K
5
4
39K
.
1
2
3
Suggested PAD Layout
C
SOT-363
SIZE
(mm)
(inch)
A
0.80
0.032
B
0.40
0.016
C
0.65
0.026
D
1.94
0.076
E
2.74
0.108
A
D E
B
Standard Packaging
REEL PACK
Case Type
SOT-363
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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