CJM1206-G

Comchip
MOSFET
SMD Diode Specialist
CJM1206-G (P-Channel )
RoHS Device
RDS(on)MAX
V(BR)DSS
ID
45mΩ @ -4.5V
60mΩ @ -2.5V
-12V
-6A
90mΩ @ -1.8V
DFNWB2*2-6L-J
Features
- P-Channel -12V(D-S) power MOSFET
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
0.082(2.076)
0.076(1.924)
Mechanical data
0.082(2.076)
0.076(1.924)
- Case: DFNEB2*2-6L-J, molded plastic.
0.002(0.05)
0.000(0.00)
0.035(0.90)
0.028(0.70)
Circuit diagram
- 1. DRAIN
- 2. DRAIN
- 3. GATE
- 4. SOURCE
- 5. DRAIN
- 6. DRAIN
D
1
0.026(0.65)TYP.
6
0.008(0.20)
REF.
0.008(0.20)
MIN.
D
4
D
2
0.026(0.66)
0.018(0.46)
5
D
0.013(0.326)
0.007(0.174)
5
S
6
0.041(1.05)
0.033(0.85)
D
0.008(0.40)
0.016(0.20)
0.039(1.00)
0.031(0.80)
3
2
1
0.014(0.35)
0.010(0.25)
G
3
4
S
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Symbol
Value
Drain-source voltage
VDS
-12
Gate-source voltage
VGS
±8
ID
-6
Drain current-pulsed
IDM*
-20
Power dissipation
PD
2.5
W
RΘJA
357
°C/W
Junction temperature range
TJ
-40 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Parameter
Unit
V
Drain current-continuous
A
Thermal resistance from junction to ambient
* Repetitive rating: Pluse width limited by junction temperature
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
SMD Diode Specialist
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Static characteristics
Drain-source breakdown voltage
Gate-source threshold voltage
V(BR) DSS
VGS = 0V , ID = -250µA
-12
VGS(th)
VDS = VGS , ID = -250µA
-0.5
V
-0.9
V
Gate-source leakage current
IGSS
VDS = 0V , VGS = ±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS = -8V , VGS = 0V
-1
µA
Drain-source on-resistance (note 1)
Forward transconductance (note 1)
RDS(on)
gfs
VGS = -4.5V , ID = -3.5A
30
45
VGS = -2.5V , ID = -3A
40
60
VGS = -1.8V , ID = -2.0A
60
90
VDS = -5V , ID = -4.1A
6
mΩ
S
Dynamic characteristics
Input capacitance (note 2,3)
ciss
Output capacitance (note 2,3)
Coss
Reverse transfer capacitance (note 2,3)
Crss
Total gate charge (note2)
Qg
740
VDS = -4V , VGS = 0V
pF
290
f = 1MHZ
190
VDS = -4V , VGS = -4.5V,
ID = -4.1A,
7.8
15
45
9
VDS = -4V , VGS = -2.5A
Gate-source charge (note2)
Qgs
Gate-drain charge (note2)
Qgd
Gate-resistance (note2,3)
Rg
nC
1.2
ID = -4.1A
Trun-on delay time (note2,3)
1.6
f = 1MHz
1.4
td(on)
7
14
13
20
35
53
32
48
10
20
5
10
11
17
22
33
16
24
Ω
VDD = -4V
Rise time (note2,3)
tr
RL = 1.2Ω , ID ≈ -3.3A
Trun-off delay time (note2,3)
Fall time (note2,3)
td(off)
VGEN = -4.5V , Rg = 1Ω
tf
nS
Turn-on delay time (note2,3)
Rise time (note2,3)
td(on)
VDD = -4V
tr
RL = 1.2Ω , ID ≈ -3.3A
Turn-off delay time (note2,3)
Fall time(note2,3)
td(off)
VGEN = -8V , Rg = 1Ω
tf
Drain-source body diode characteristics
Is
-6
Pulse diode forward current (note1)
IsM
-20
Body ciode voltage
VSD
Continuous source-drain diode current
A
IF = -3.3A
-1.2
V
Note:
1.Pulse test; pulse width≤300µs, Duty cycle≤2%
2. Guaranteed by design, not subject to production testing.
3. These parameters have no way to verify.
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (CJM1206-G)
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
-5
-16
VDS = -3V
-4
Drain Current, ID (A)
Drain Current, ID (A)
VGS = -4.5V, -4V, -3.5V, -3V, -2.5V
-12
VGS = -2V
-8
VGS = -1.5V
-3
-2
Ta=100°C
Pulsed
Ta=25°C
Pulsed
-4
-1
-0
-0
-1
-3
-2
-0
-4
-0
Drain to Soruce Voltage, VDS (V)
-0.5
-1.5
-1.0
-2.0
Gate to Source Voltage, VGS (V)
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
200
180
On-Resistance, RDS(ON) ( mΩ )
On-Resistance, RDS(ON) ( mΩ )
Ta=25°C
Pulsed
120
VGS = -1.8V
60
VGS = -2.5V
150
100
ID = -3.3A
50
Ta=100°C
Pulsed
Ta=25°C
Pulsed
VGS = -4.5V
0
0
-2
-0
-4
-6
-8
-10
-12
Drain Current, ID (A)
-6
Gate to Source Voltage, VGS (V)
Fig.6 - Threshold Voltage
Fig.5 - IS — VSD
-10
-1.0
Threshold Voltage, VTH( V )
Source Current, Is ( A )
-4
-2
-0
-1
Ta=100°C
Pulsed
Ta=25°C
Pulsed
-0.1
-0.2
-0.4
-0.8
-1.2
-1.6
-2.0
-0.8
ID = -250uA
-0.6
-0.4
-0.2
-0
25
Source to Drain Voltage, VSD (V)
50
75
100
125
Ambient Temperature, Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
SMD Diode Specialist
Reel Taping Specification
d
P1
P0
E
F
A
W
P
12
0o
D2
D1 D
W1
Trailer Tape
Leader Tape
100± Empty pockets
DFNWB2X2-6L-J
DFNWB2X2-6L-J
100± Empty pockets
Components
SYMBOL
A
B
C
d
D
D1
D2
(mm)
2.30 ± 0.05
2.30 ± 0.05
1.10 ± 0.05
1.50 ± 0.10
180.00 + 0.00
- 3.00
60.00 ± 0.50
13.00 ± 0.20
(inch)
0.091 ± 0.002
0.091 ± 0.002
0.043 ± 0.002
0.059 ± 0.004
7.087 + 0.000
- 0.118
2.362 ± 0.002
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30
- 0.10
13.10 ± 1.30
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.315 + 0.012
- 0.004
0.518 ± 0.051
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip
MOSFET
SMD Diode Specialist
Marking Code
Pin 1
Part Number
Marking Code
CJM1206-G
1206
1206
Pin 1
Suggested PAD Layout
DFNWB2X2-6L-J
SIZE
(mm)
(inch)
A
2.30
0.091
B
1.40
0.055
C
1.05
0.041
D
1.00
0.039
E
0.40
0.016
F
0.66
0.026
G
0.45
0.018
H
0.40
0.016
I
0.65
0.026
PKG.
D
E
F
A B C
G
I
H
Standard Packaging
Case Type
DFNWB2X2-6L-J
Qty Per Reel
Reel Size
(Pcs)
(inch)
8,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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