CJS8810-HF

MOSFET
CJS8810-HF
8
5
N-Channel
RoHS Device
Halogen Free
1
4
TSSOP8
Features
0.122(3.10)
0.114(2.90)
- Uses advanced trench technology.
- Excellent RDS(ON) and low gate charge.
Mechanical data
8
7
6
0.047(1.20)
MAX.
5
- Case: TSSOP8, molded plastic.
Circuit diagram
8
7
0.177(4.50)
0.169(4.30)
0.258(6.55)
0.246(6.25)
D1/D2 S2 S2 G2
5
6
1
2
3
4
0.028(0.70)
0.020(0.50)
1
2
0.012(0.30)
0.007(0.19)
4
3
0.008(0.20)
0.004(0.09)
0.026(0.65)
BSC.
D1/D2 S1 S1 G1
V(BR)DSS
RDS(on) MAX
Dimensions in inches and (millimeter)
ID
20mΩ@10V
22mΩ@4.5V
20V
24mΩ@3.8V
7A
26mΩ@2.5V
35mΩ@1.8V
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Value
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGS
±12
V
Continuous drain current
ID
7
A
Pulsed drain current (Note 1)
IDM
30
A
Total power dissipation (Note 2)
PD
0.7
W
RθJA
125
°C/W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
TL
260
°C
Parameter
Thermal resistance from junction to ambient
Lead temperature for soldering purposes(1/8’’ from case for 10s)
Note: 1. Repetitive rating：Pulse width limited by junction temperature.
Note: 2. Device mounted on FR4 substrate pcb board 2 oz copper with minimum recommended pad layout.
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameters
Drain-source breakdown voltage
V(BR) DSS
VGS =0V , ID=250µA
Zero gate voltage drain current
IDSS
VDS =16V , VGS=0V
1
VDS =0V , VGS=±4.5V
±1
Gate-body leakage current
IGSS
20
V
µA
VDS =0V , VGS=±8V
Gate threshold voltage (Note 1)
Drain-source on-resistance (Note 1)
VGS(th)
RDS(on)
µA
VDS =VGS , ID=250µA
±10
0.4
1
VGS=10V , ID=7A
14
20
VGS=4.5V , ID=6.6A
16
22
VGS=3.8V , ID=6A
17
24
VGS=2.5V , ID=5.5A
20
26
VGS=1.8V , ID=5A
28
35
Forward transconductance (Note 1)
gFS
VDS=5V , ID=7A
Diode forward voltage (Note 1)
VSD
IS=1A , VGS=0V
V
mΩ
S
9
1
V
Dynamic Parameters (Note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
145
Total gate charge
Qg
15
Gate-source charge
Qgs
Gate-drain charge
Qgd
3.2
td(on)
6
1150
VDS=10V , VGS=0V,
f=1MHZ
VDS=10V , VGS=4.5V,
ID=7A
185
0.8
pF
nC
Switching Parameters (Note 2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
tr
td(off)
VGS=5V , VDD=10V
RL=1.35Ω , RGEN=3Ω
tf
13
nS
52
16
Notes:
1. Pulse test: Pulse width≤300µs, Duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (CJS8810-HF)
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
10
20
Pulsed
10V
8
15
2.0V
Drain Current, ID (A)
Drain Current, ID (A)
VDS=16V
Pulsed
9
3.0V
10
1.5V
7
6
5
4
TA=100°C
3
5
2
VGS=1.2V
TA=25°C
1
0
0
0
2
4
6
8
10
0
0.5
Drain to Soruce Voltage, VDS (V)
1.5
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
50
350
Pulsed
TA=25°C
Pulsed
TA=25°C
300
ON-Resistance, RDS(ON), (mΩ)
ON-Resistance, RDS(ON) (mΩ)
1.0
Gate to Source Voltage, VGS (V)
40
VGS=1.8V
30
VGS=2.5V
20
250
200
150
100
ID=7A
50
VGS=10V
10
0
1
2
3
4
5
6
7
6
4
2
Drain Current, ID (A)
8
10
Gate to Source Voltage, VGS (V)
Fig.5 - IS — VSD
Fig.6 - Threshold Voltage
800
7
Pulsed
TA=25°C
Threshold Voltage, VTH (mV)
Source Current, IS (A)
1
0.1
0.01
1E-3
1E-4
0.4
700
600
ID=250μA
500
400
0.6
0.8
1.0
1.2
25
Source to Drain Voltage, VSD (V)
50
75
100
125
Junction Temperature, TJ (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
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Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
d
P1
E
P0
T
F
W
B
P
C
A
12
o
0
D2
D1
D
W1
Trailer Tape
50±1 Empty Pockets
TSSOP8
TSSOP8
Leader Tape
50±1 Empty Pockets
Components
SYMBOL
A
B
C
d
D
D1
D2
(mm)
6.76 ± 0.10
3.30 ± 0.10
1.20 ± 0.10
1.50 ± 0.10
330 ± 1.00
100 ± 1.00
13.00 ± 1.00
(inch)
0.266 ± 0.004
0.130 ± 0.004
0.047 ± 0.004
0.059 ± 0.004
13.00 ± 0.039
3.937 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
5.50 ± 0.10
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
12.00 + 1.00 /–0.10
17.60 ± 1.00
(inch)
0.069 ± 0.004
0.217 ± 0.004
0.315 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.472 + 0.039 /–0.004
0.693 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
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Comchip Technology CO., LTD.
MOSFET
Marking Code
Part Number
Marking Code
CJS8810-HF
S8810
1
S8810
YY
8
Solid dot “ ” = Halogen Free
YY = Date Code
Suggested PAD Layout
TSSOP8
SIZE
(mm)
(inch)
A
0.32
0.013
B
1.60
0.063
C
0.65
0.026
D
5.60
0.220
E
1.95
0.077
F
4.00
0.157
G
7.20
0.283
G
B
F
A
E
C
D
Note:
1.General tolerance: ±0.05mm.
2.The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
TSSOP8
REEL
Reel Size
( pcs )
(inch)
3,000
13
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
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QW-JTR15
Comchip Technology CO., LTD.