CDBH3-00340-G

Small Signal Schottky Diodes
CDBH3-00340-G
Reverse Voltage: 40Volts
Forward Current: 30mA
RoHS Device
SOT-523
Features
0.067(1.70)
0.059(1.50)
-Designed for mounting on small surface.
-High speed switching application, circuit
protection.
3
0.033(0.85)
0.030(0.75)
-Low turn-on voltage
1
Mechanical data
2
0.008(0.20)
0.004(0.10)
0.043(1.10)
0.035(0.90)
-Case: SOT-523, molded plastic.
0.069(1.75)
0.057(1.45)
0.031(0.80)
0.024(0.60)
-Terminals: Solder plated, solderable per MILSTD-750, method 208.
0.004(0.10)max.
0.012(0.30)
0.006(0.15)
-Approx. weight: 0.002 grams.
0.004(0.10)min.
3
Equivalent circuit:
Dimensions in inched and (millimeters)
1
2
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Repetitive peak reverse voltage
Symbol
Min
Typ.
Max
Unit
VRRM
V
V
40
V
Reverse voltage
VR
40
V
Average forward current
IO
30
mA
Forward current, surge peak
8.3ms single half sine-wave superimposed on
rated load (JEDEC method)
Power dissipation
IFSM
PD
Storage temperature
TSTG
Max. junction temperature
mA
200
150
-40
TJ
mW
+125
O
C
+125
O
C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ.
Max
Unit
V
V
0.37
V
1
μA
2
pF
Forward voltage
IF=1mA
VF
Reverse current
VR=10V
IR
Capacitance between terminals
f=1MHz, VR=1V
CT
1.5
Rev.A
QW-BA009
Page 1
Small Signal Schottky Diodes
RATING AND CHARACTERISTIC CURVES (CDBH3-00340C-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
100m
1m
100μ
125 OC
O
Forward Current (A)
Reverse Current (A)
75 C
10m
O
125 C
1m
O
25 C
100μ
O
-25 C
10μ
O
75 C
1μ
O
25 C
100n
-25 OC
10n
10μ
1n
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
Forward Voltage (V)
20
25
30
35
40
Reverse Voltage (V)
Fig.3 - Capacitance Between
Terminals Characteristics
Fig.4 - Power Derating Curve
10
120
f=1MHz
TA=25 OC
Mounting on glass epoxy PCBs
100
IO Current (%)
Capacitance Between Terminals (pF)
15
1
80
60
40
20
0.1
0
0
5
10
15
20
Reverse Voltage (V)
25
30
0
25
50
75
100
125
150
Ambient Temperature (°C)
Rev.A
QW-BA009
Page 2
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