CDBT0540-G

SMD Schottky Barrier Diode
CDBT0540-G
RoHS Device
Features
SOT-23
0.119(3.00)
-Small surface mount type.
0.110(2.80)
3
-Low reverse current and low forward voltage.
0.056(1.40)
0.047(1.20)
-High reliability.
1
2
0.006(0.15)
0.083(2.10)
Marking: D3A
0.002(0.05)
0.066(1.70)
0.044(1.10)
0.103(2.60)
0.035(0.90)
0.086(2.20)
0.006(0.15) max
0.020(0.50)
0.007(0.20) min
0.013(0.35)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Value
Unit
Peak reverse voltage
VRM
40
V
DC reverse voltage
VR
40
V
Peak surge forward voltage
IFSM
3
A
Mean rectifying current
IO
0.5
A
Power dissipation
PD
250
mW
RθJA
500
Junction temperature
TJ
125
O
C
Storage temperature
TSTG
-40 to +125
O
C
Parameter
Thermal resistance, junction to ambient
O
C/W
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Reverse breakdown voltage
VBR
IR=100μA
Forward voltage
VF
IF=500mA
Reverse current
IR
Capacitance between terminals
CT
Min
Typ.
Max
40
Unit
V
0.55
V
VR=10V
30
μA
VR=30V
50
μA
VR=0V, f=1MHz
125
pF
VR=10V, f=1MHz
20
pF
REV:B
Page 1
QW-BA016
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBT0540-G)
Fig.2 Reverse Characteristics
Fig.1 Forward Characteristics
1
10m
O
C
IR, Reverse Current (A)
O
5
O
TA
C
=1
25
10m
O
5
TA
=-2
5
C
O
TA
=2
1m
C
TA
=7
IF, Forward Current (A)
100m
100μ
T A =1 2 5 C
1m
100μ
O
T A= 7 5 C
10μ
O
TA = 25 C
1μ
10μ
1μ
0.1μ
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
10
15
20
25
VF, Forward Voltage (V)
VR, Reverse Voltage (V)
Fig.3 Capacitance Between Terminals
Characteristics
Fig.4 Power Derating Curve
30
35
125
150
PD, Power Dissipation (W)
CT, Capacitance Between Terminals (pF)
1000
100
10
1
0.5
0
0
5
10
15
20
25
0
VR, Reverse Voltage (V)
25
50
75
100
TA, Ambient Temperature (°C)
REV:B
Page 2
QW-BA016
Comchip Technology CO., LTD.
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