CDBV0140-G

SMD Schottky Barrier Diode
CDBV0140-G
IO=0.1A
VR=30V
RoHS Device
SOD-323
Features
-High current rectifier Schottky diode.
-Low voltage, low inductance.
0.071 (1.80)
0.063 (1.60)
-For power supply.
0.014 (0.35)
0.010 (0.25)
Mechanical data
0.055 (1.40)
0.047 (1.20)
0.106 (2.70)
0.098 (2.50)
- Case: SOD-323, Molded Plastic
0.006 (0.15)
- Terminals: Solderable per MIL-STD-202,
Method 208
0.003 (0.08)
0.039 (1.00)max
0.019 (0.475)REF.
0.004 (0.10)max
- Marking: 4
Dimensions in inches and (millimeters)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Limits
Unit
Peak reverse voltage
V RM
45
V
DC reverse voltage
VR
40
V
Average rectified current
IO
0.1
A
Peak forward surge current
I FSM
1
A
Junction temperature range
TJ
-55 ~ +125
O
C
Storage temperature range
T STG
-55 ~ +125
O
C
Parameter
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F =100mA
I F =10mA
VF
0.55
0.34
V
Reverse current
V R =10V
IR
30
μA
Capacitance between terminals
V R =10V, f=1MHz
CT
6
pF
REV:A
QW-BA014
Page 1
SMD Schottky Barrier Diode
ELECTRICAL CHARACTERISTIC CURVES (CDBV0140-G)
Fig.1 Forward Characteristics
Fig.2 Reverse Characteristics
10m
1 000
O
125 C
1m
100
O
75 C
100 μ
10μ
25 OC
10
1μ
0.1μ
1
0
0.1
0 .2
0. 4
0.3
0.5
0.6
10
0
20
40
30
V R , Reverse Voltage (V)
V F , Forward Voltage (V)
Fig.3 Capacitance Between
Terminals Characteristics
Fig.4 Forward Derating Curve
1 00
100
80
60
10
40
20
1
0
0
5
10
15
20
25
V R , Reverse Voltage (V)
30
35
0
24
50
75
10 0
125
1 50
T A, Ambient Temperature ( O C)
REV:A
QW-BA014
Page 2
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