2SC3356R-G

General Purpose Transistor
2SC3356-G Series
RoHS Device
Features
- Low noise and high gain.
- High power gain.
- Designed for low noise amplifier.
Circuit Diagram
SOT-23
1 : BASE
2 : EMITTER
3 : COLLECTOR
Collector
3
0.122(3.10)
0.106(2.70)
3
0.059(1.50)
0.043(1.10)
1
Base
1
2
Emitter
0.004(0.10)
Typ.
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base voltage
VCBO
20
V
Collector-Emitter voltage
VCEO
12
V
Emitter-Base voltage
VEBO
3
V
Collector current - continuous
IC
100
mA
Collector dissipation
PC
200
mW
Parameter
2
0.079(2.00)
0.071(1.80)
Junction temperature
TJ
150
°C
Storage temperature
Tstg
-65~+150
°C
0.039(1.00)
Typ.
0.016(0.40)
Typ.
0.102(2.60)
0.087(2.20)
0.004(0.10)
0.001(0.02)
0.019(0.48)
0.014(0.35)
Dimensions in inches and (millimeter)
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base breakdown voltage
IC =10μA , IE=0
V(BR)CBO
20
V
Collector-Emitter breakdown voltage
IC =1mA , IB=0
V(BR)CEO
12
V
Emitter-Base breakdown voltage
IE =10μA , IC=0
V(BR)EBO
3
V
Collector cut-off current
VCB=10V , IE=0
ICBO
1
µA
Emitter cut-off current
VEB=1V , IC=0
IEBO
1
µA
DC current gain
VCE=10V , IC=20mA
hFE
Transition frequency
VCE=10V , IC=20mA
fT
50
2
120
300
7
GHZ
11.5
dB
Insertion power gain
VCE=10V , IC=20mA , f=1GHZ
Feed-back capacitance
VCB=10V , IE=0 , f=1MHZ
Cre
0.55
1.0
PF
Noise Figure
VCB=10V , IC=7mA , f=1GHZ
NF
1.1
2.0
dB
|S21e|
Classification Of hFE
Part No.
2SC3356Q-G
2SC3356R-G
2SC3356S-G
Range
50-100
80-160
125-250
Marking
R23
R24
R25
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 1
QW-BTR48
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (2SC3356-G)
Fig.1 - Total Power Dissipation Vs.
Ambient Temperature
Fig.2 - Feed-back Capacitance Vs.
Collector To Base Voltage
2
Feed-back Capacitance, Cre (pF)
Total Power Dissipation, (mW)
250
200
150
100
50
25
50
75
100
125
1
0.5
0.3
0.2
0
0
f = 1MHz
150
30
10
1
Ambient Temperature, TA (°C)
Collector To Base Voltage, VCB (V)
Fig.3 - Dc Current Gain Vs. Collector Current
Fig.4 - Insertion Gain Vs. Collector Current
200
15
Insertion Gain, |S21e| (dB)
100
2
Dc Current Gain, hFE
VCE=10V
50
10
5
VCE=10V
f = 1GHz
10
0.5
10
1
0
0.5
50
10
5
70
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Fig.5 - Gain Bandwidth Product Vs.
Collector Current
Fig.6 - Insertion Gain, Max. Gain Vs. Frequency
25
10
Gmax
Maximum Gain, Gmax (dB)
2
Insertion Gain, |S21e| (dB)
Gain Bandwidth Product, fT (MHz)
1
1
20
2
|S21e|
15
10
5
VCE=10V
0.1
0.1
1
10
100
0
0.05
Collector Current, Ic (mA)
0.1
0.5
1
2
Frequency, f (GHz)
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 2
QW-BTR48
Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
P1
W
B
F
E
d
P0
A
P
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 + 0.10
178 ± 2.0
54.40 ± 1.0
13.00 ± 1.0
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.158 ± 0.004
0.158 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 3
QW-BTR48
Comchip Technology CO., LTD.
General Purpose Transistor
Marking Code
3
Part Number
Marking Code
2SC3356Q-G
R23
2SC3356R-G
R24
2SC3356S-G
R25
XXX
1
2
XXX = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
(inch)
A
0.90
0.035
B
0.80
0.032
C
0.95
0.037
D
2.00
0.079
A
D
C
C
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 4
QW-BTR48
Comchip Technology CO., LTD.
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