General Purpose Transistor 2SC3356-G Series RoHS Device Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier. Circuit Diagram SOT-23 1 : BASE 2 : EMITTER 3 : COLLECTOR Collector 3 0.122(3.10) 0.106(2.70) 3 0.059(1.50) 0.043(1.10) 1 Base 1 2 Emitter 0.004(0.10) Typ. Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Value Unit Collector-Base voltage VCBO 20 V Collector-Emitter voltage VCEO 12 V Emitter-Base voltage VEBO 3 V Collector current - continuous IC 100 mA Collector dissipation PC 200 mW Parameter 2 0.079(2.00) 0.071(1.80) Junction temperature TJ 150 °C Storage temperature Tstg -65~+150 °C 0.039(1.00) Typ. 0.016(0.40) Typ. 0.102(2.60) 0.087(2.20) 0.004(0.10) 0.001(0.02) 0.019(0.48) 0.014(0.35) Dimensions in inches and (millimeter) Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Min Typ Max Unit Collector-Base breakdown voltage IC =10μA , IE=0 V(BR)CBO 20 V Collector-Emitter breakdown voltage IC =1mA , IB=0 V(BR)CEO 12 V Emitter-Base breakdown voltage IE =10μA , IC=0 V(BR)EBO 3 V Collector cut-off current VCB=10V , IE=0 ICBO 1 µA Emitter cut-off current VEB=1V , IC=0 IEBO 1 µA DC current gain VCE=10V , IC=20mA hFE Transition frequency VCE=10V , IC=20mA fT 50 2 120 300 7 GHZ 11.5 dB Insertion power gain VCE=10V , IC=20mA , f=1GHZ Feed-back capacitance VCB=10V , IE=0 , f=1MHZ Cre 0.55 1.0 PF Noise Figure VCB=10V , IC=7mA , f=1GHZ NF 1.1 2.0 dB |S21e| Classification Of hFE Part No. 2SC3356Q-G 2SC3356R-G 2SC3356S-G Range 50-100 80-160 125-250 Marking R23 R24 R25 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 1 QW-BTR48 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (2SC3356-G) Fig.1 - Total Power Dissipation Vs. Ambient Temperature Fig.2 - Feed-back Capacitance Vs. Collector To Base Voltage 2 Feed-back Capacitance, Cre (pF) Total Power Dissipation, (mW) 250 200 150 100 50 25 50 75 100 125 1 0.5 0.3 0.2 0 0 f = 1MHz 150 30 10 1 Ambient Temperature, TA (°C) Collector To Base Voltage, VCB (V) Fig.3 - Dc Current Gain Vs. Collector Current Fig.4 - Insertion Gain Vs. Collector Current 200 15 Insertion Gain, |S21e| (dB) 100 2 Dc Current Gain, hFE VCE=10V 50 10 5 VCE=10V f = 1GHz 10 0.5 10 1 0 0.5 50 10 5 70 Collector Current, Ic (mA) Collector Current, Ic (mA) Fig.5 - Gain Bandwidth Product Vs. Collector Current Fig.6 - Insertion Gain, Max. Gain Vs. Frequency 25 10 Gmax Maximum Gain, Gmax (dB) 2 Insertion Gain, |S21e| (dB) Gain Bandwidth Product, fT (MHz) 1 1 20 2 |S21e| 15 10 5 VCE=10V 0.1 0.1 1 10 100 0 0.05 Collector Current, Ic (mA) 0.1 0.5 1 2 Frequency, f (GHz) Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 2 QW-BTR48 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P1 W B F E d P0 A P SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 + 0.10 178 ± 2.0 54.40 ± 1.0 13.00 ± 1.0 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 3 QW-BTR48 Comchip Technology CO., LTD. General Purpose Transistor Marking Code 3 Part Number Marking Code 2SC3356Q-G R23 2SC3356R-G R24 2SC3356S-G R25 XXX 1 2 XXX = Product type marking code Suggested PAD Layout B SOT-23 SIZE (mm) (inch) A 0.90 0.035 B 0.80 0.032 C 0.95 0.037 D 2.00 0.079 A D C C Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 4 QW-BTR48 Comchip Technology CO., LTD.