D882M-G

General Purpose Transistors
D882M-G
RoHS Device
Features
TO-252-2L
- Power Dissipation
- High collector current.
- High current gain.
- Low collector-emitter saturation voltage.
0.264(6.70)
0.256(6.50)
0.070(1.78)
REF.
0.215(5.46)
0.051(1.30)
0.043(1.10)
0.409(10.40)
0.386( 9.80)
- 1. BASE
- 2. COLLECTOR
- 3. EMITTER
1
2
2
REF.
0.055(1.40)
0.031(0.80)
Φ
Diagram
0.030(0.76 )
0.202(5.13)
0.190(4.83 )
REF.
3
C
1
B
0.090(2.29)
Typ.
E
3
0.032(0.81)
0.028(0.71)
0.186(4.73)
0.170(4.33)
0.094(2.38)
0.087(2.20)
Maximum Ratings (at T =25°C unless otherwise noted)
0.022(0.56)
0.018(0.46)
A
Symbol
Value
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Collector current-continuous
IC
3
A
Collector power dissipation
PC
1.25
W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
Parameter
0.244(6.20)
0.236(6.00)
0.004(0.10)
MAX.
0.114(2.90)
REF.
0.067(1.70)
0.055(1.40)
0.022(0.56)
0.018(0.46)
Dimensions in inches and (millimeters)
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC = 100μA, IE = 0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB = 0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 100μA, IC = 0
6
V
Collector cut-off current
ICBO
VCB = 40V, IE = 0
1
μA
Collector cut-off current
ICEO
VCE = 30V, IB = 0
10
μA
Emitter cut-off current
IEBO
VEB = 6V, IC = 0
1
μA
DC current gain
hFE
VCE = 2V, IC = 1A
Collector-emitter saturation voltage
VCE(sat)
IC = 2A, IB = 0.2A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 2A, IB = 0.2A
1.5
V
Transition frequency
fT
VCE = 5V, IC = 0.1A, f = 10MHz
100
200
90
Company reserves the right to improve product design , functions and reliability without notice.
MHz
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General Purpose Transistors
RATING AND CHARACTERISTIC CURVES (D882M-G)
Fig.3 - VCEsat — IC
Fig.1 - Static Characteristic
10mA
9mA
8mA
2.0
7mA
6mA
1.5
5mA
4mA
1.0
3mA
2mA
0.5
IB= 1mA
0
0
100
10
β=10
1
1
3
2
4
5
6
8
7
10
1
100
Collector Current, IC (mA)
Fig.4 - VBEsat — IC
Fig.5 - IC — VBE
3000
2000
100
5°C
00°C
TA=2
Collector Current, IC (mA)
Base-Emitter Saturation Voltage
, VBEsat (mV)
1000
1000
10
COMMON EMITTER
VCE = 2V
β=10
1
100
1
100
10
1000
3000
300
0
Fig.6 - Cob / Cib
900
1200
Fig.4 - Typical Power Derating Curve
— VCB / VEB
1400
Collector Power Dissipation, Pc (mW)
500
f=1MHZ
IE=0/IC=0
Ta=25°C
Cib
100
Cob
10
0.1
600
Base-Emitter Voltage, VBE (mV)
Collector Current, IC (mA)
Capacitance, C (pF)
3000
1000
Collector-Emitter Voltage, VCE (V)
TA=1
Collector Current, IC (A)
1000
COMMON
-500uA
EMITTER
-450uA
Ta=25°C
Collector-Emitter Saturation Voltage
, VCEsat (mV)
2.5
Mounting on glass epoxy PCBs
1200
1000
800
600
400
200
0
1
10
20
0
25
50
75
100
125
150
Ambient Temperature, Ta (°C)
Reverse Voltage, V (V)
Company reserves the right to improve product design , functions and reliability without notice.
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General Purpose Transistors
Reel Taping Specification
P0
B
F
E
P1
A
c
P
12
o
0
D2
D1 D
W1
TO-252-2L
TO-252-2L
SYMBOL
A
B
C
d
D
D1
D2
(mm)
6.90 ± 0.10
10.50 ± 0.10
2.70 ± 0.10
Φ1.55 ± 0.10
330.00 ± 2.00
100.00 ± 1.00
21.00 ± 1.00
(inch)
0.272 ± 0.004
0.413 ± 0.004
0.106 ± 0.004
Φ0.061 ± 0.004
12.992 ± 0.079
3.937 ± 0.039
0.827 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
7.50 ± 0.10
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
16.00 + 0.30 / -0.10
13.00 ± 1.00
(inch)
0.069 ± 0.004
0.295 ± 0.004
0.315 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.630 + 0.012 / -0.004
0.512 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
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General Purpose Transistors
Marking Code
Part Number
Marking Code
D882M-G
D882M
Marking code
D882M
XXX
Control Code
Suggested PAD Layout
TO-252-2L
A
SIZE
(mm)
(inch)
A
5.80
0.228
B
5.85
0.230
C
3.70
0.146
D
1.20
0.047
E
2.00
0.079
F
4.57
0.180
B
D
C
E
F
Standard Packaging
REEL PACK
Case Type
TO-252-2L
REEL
Reel Size
( pcs )
(inch)
2,500
13
Company reserves the right to improve product design , functions and reliability without notice.
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