General Purpose Transistor FMMT619-G (NPN) RoHS Device Features SOT-23 -Low Saturation Voltage. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Diagram: 1 Collector 3 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 1 Base 0.041(1.05) 0.035(0.90) 0.100(2.55) 0.089(2.25) 2 Emitter 0.004(0.10) max 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Value Units Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5.0 V Collector current-continuous IC 2 A Power dissipation PC 350 mW Thermal resistance from junction to ambient RθJA 357 °C/W Maximum power dissipation (Note 1) PCM 625 mW Thermal resistance from junction to ambient (Note 1) RθJA 200 °C/W TJ 150 °C TSTG -55 to +150 °C Parameter Junction temperature Storage temperature range Notes: 1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15*15*0.6mm. Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 1 QW-BTR55 Comchip Technology CO., LTD. General Purpose Transistor Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Units Collector-Base breakdown voltage V(BR)CBO IC=100μA, IE=0 50 - - V Collector-Emitter breakdown voltage (Note 1) V(BR)CEO IC=10mA, IB=0 50 - - V Emitter-Base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 - - V Collector cut-off current ICBO VCB=40V, IE=0 - 100 nA Emitter cut-off current IEBO VEB=4V, IC=0 - - 100 nA hFE(1) VCE=2V, IC=10mA 200 - - hFE(2) VCE=2V, IC=0.2A 300 - - hFE(3) VCE=2V, IC=1A 200 - - hFE(4) VCE=2V, IC=2A 100 - - hFE(5) VCE=2V, IC=6A - 40 - VCE(sat)1 IC=0.1A, IB=10mA - - 20 mV VCE(sat)2 IC=1A, IB=10mA - - 200 mV VCE(sat)3 IC=2A, IB=100mA - - 220 mV Base-Emitter saturation voltage (Note 1) VBE(sat) IC=2A, IB=50mA - - 1 V Base-Emitter on voltage (Note 1) VBE(on) IC=2A, VCE=2V - - 1 V VCB=10V, f=1MHz - - 20 pF - 170 - nS - 750 - nS 100 - - MHz DC current gain (Note 1) Collector-Emitter saturation voltage (Note 1) Output capacitance Cob Turn-on time t(on) Turn-off time t(off) Transition frequency fT VCC=10V, IC=1A IB1=-IB2=10mA VCE=10V, IC=50mA f=100MHz Notes: 1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%. Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 2 QW-BTR55 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (FMMT619-G) Fig.2 - hFE — IC Fig.1 - Static Characteristic 500 1200 VCE=2V 0.5mA 400 1000 0.45mA DC Current Gain, hFE Collector Current, IC (mA) COMMON EMITTER Ta=25°C 0.4mA 300 0.35mA 200 0.25mA 0.3mA 0.2mA Ta=100°C 800 600 Ta=25°C 400 0.15mA 100 200 0.1mA IB=0.05mA 0 0 0 3 2 1 4 5 6 1 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Fig.3 - VBEsat — IC Fig.4 - VCEsat — IC 1000 400 β = 40 β = 20 Collector-Emitter Saturation Voltage, VCEsat (mV) Base-Emitter Saturation Voltage, VBEsat (mV) 1000 2000 100 10 800 Ta= 25°C 600 Ta=100°C 400 200 300 200 Ta=100°C 100 Ta= 25°C 0 0 10 1 1000 2000 100 1 100 1000 2000 Collector Current, Ic (mA) Fig.5 - FT — IC Fig.6 - Cob/Cib — VCB/VEB 200 1000 f=1MHZ IE=0/IC=0 Ta=25°C Cib 150 Capacitance, C (pF) Transtion frequency, fT (MHZ) 10 Collector Current, Ic (mA) 100 50 100 Cob 10 VCE=10V Ta= 25°C 0 0 20 40 60 80 100 0 0.1 Collector Current, IC (mA) 1 10 20 Reverse Voltge, V (V) Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 3 QW-BTR55 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (FMMT619-G) Fig.7 - VBE — IC Fig.8 - PC — Ta 500 Collector Power Dissipation, Pc (mW) 2000 Collector Current, Ic (mA) VCE=2V 1600 1200 Ta=100°C 800 Ta= 25°C 400 0 200 400 300 200 100 0 400 600 800 1000 0 Base - Emitter Voltage, VBE (mV) 25 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 4 QW-BTR55 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P1 d T W B F E P0 C A P 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.087 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 5 QW-BTR55 Comchip Technology CO., LTD. General Purpose Transistor Marking Code 3 Part Number Marking Code FMMT619-G 619 XXX 1 2 xx = Product type marking code Suggested PAD Layout B SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.60 0.024 C 1.90 0.075 D 2.02 0.080 A D C Note: 1.General tolerance: ±0.05mm. 2.The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 6 QW-BTR55 Comchip Technology CO., LTD.