General Purpose Transistor MMBT5551-G (NPN) RoHS Device Features SOT-23 - Epitaxial planar die construction. - Complementary PNP type available (MMBT5401-G). - Ideal for medium power amplification and switching. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) 1 - Case: SOT-23, molded plastic. 2 0.079(2.00) 0.071(1.80) - Terminals: Solderable per MIL-STD-750, method 2026. 0.006(0.15) - Approx. weight: 0.008 grams(approx.). 0.003(0.08) 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) Diagram: 0.004(0.10) max 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) Collector 2 Dimensions in inches and (millimeter) 1 Base 3 Emitter Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current IC 600 mA Collector power dissipation PC 300 mW RΘJA 416 °C/W Junction temperature range TJ 150 °C Storage temperature range TSTG -55 ~ +150 °C Parameter Thermal resistance from junction to ambient Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR20 Page 1 Comchip Technology CO., LTD. General Purpose Transistor Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Min. Typ. Unit Max. Collector-base breakdown voltage IC=100μA, IE=0 V(BR)CBO 180 Collector-emitter breakdown voltage IC=1mA, IB=0 V(BR)CEO* 160 V Emitter-base breakdown voltage IE=10μA, IC=0 V(BR)EBO 6 V Collector cut-off current VCB=120V, IE=0 ICBO 50 nA Emitter cut-off current VEB=4V, IC=0 IEBO 50 nA DC current gain V V VCE=5V, IC=1mA hFE(1)* 80 VCE=5V, IC=10mA hFE(2)* 100 VCE=5V, IC=50mA hFE(3)* 50 IC=10mA, IB=1mA VCE(sat)1* 0.15 V IC=50mA, IB=5mA VCE(sat)2* 0.20 V IC=10mA, IB=1mA VBE(sat)1* 1 V IC=50mA, IB=5mA VBE(sat)2* 1 V 300 MHZ 6 pF 200 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE=10V, IC=10mA, f=100MHz Collector output capacitance VCB=10V, IE=0, f=1MHz 100 fT Cob *Pulse test: pulse width ≤300µs, duty cycle≤2.0% RATING AND CHARACTERISTIC CURVES (MMBT5551-G) Fig.2 - hFE — IC Fig.1 - Static Characteristic 18 Ta=100°C 80uA 15 70uA 12 DC Current Gain, hFE Collector Current, IC (mA) 500 COMMON EMITTER Ta=25°C 90uA 60uA 50uA 9 40uA 6 30uA COMMON EMITTER VCE=5V Ta=25°C 100 IB=20uA 3 0 0 0 2 4 6 8 10 12 1 Collector-Emitter Voltage, VCE (V) 10 100 200 Collector Current, Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR20 Page 2 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT5551-G) Fig.4 - VCEsat — IC Fig.3 - VBEsat — IC 0.3 1.0 β = 10 Collector -Emitter Saturation Voltage, VCEsat (V) Base - Emitter Saturation Voltage, VBEsat (V) β = 10 0.8 Ta= 25°C 0.6 Ta=100°C 0.4 0.1 Ta= 25°C 0.01 0.2 0.1 1 10 100 200 Collector Current, Ic (mA) 10 1 Collector Current, Ic (mA) Fig.5 - IC — VBE Fig.7 - Cob/Cib — VCB/VEB 200 100 f=1MHZ IE=0/IC=0 Ta=25°C COMMON EMITTER VCE=5V Capacitance, C (pF) Cib Ta=100°C Ta= 25°C 10 1 0.2 0.4 0.6 0.8 10 Cob 0 0.1 1.0 10 1 Base-Emmiter Voltage, VBE (V) 20 Reverse Voltage, V (V) Fig.7 - FT — IC Fig.8 - PC — Ta 150 0.4 VCE=10V Ta=25°C Collector Power Dissipation, PC (W) Transtion Frequency, fT (MHZ) 100 Collector Current, Ic (mA) 200 100 Ta=100°C 100 50 Mounted on glass epoxy PCBs 0.3 0.2 0.1 0 1 3 10 20 30 0 25 Collector Current, IC (mA) 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR20 Page 3 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P1 F E d P0 B XX 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 / - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 / - 0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR20 Page 4 Comchip Technology CO., LTD. General Purpose Transistor Marking Code 3 Marking Code Part Number MMBT5551-G XX G1 1 2 xx = Product type marking code Suggested PAD Layout SOT-23 A SIZE (mm) (inch) A 0.60 0.024 B 0.80 0.031 C 1.90 0.075 D 2.02 0.080 E 2.82 0.111 B D E C Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR20 Page 5 Comchip Technology CO., LTD.