General Purpose Transistor MMBTA42-G (NPN) RoHS Device Features SOT-23 -High breakdown voltage. 0.119(3.00) 0.110(2.80) -Low collector-emitter saturation voltage. 3 -Ultra small surface mount package. 0.056(1.40) 0.047(1.20) Diagram: 1 2 0.079(2.00) 0.071(1.80) Collector 3 0.006(0.15) 0.003(0.08) 1 Base 0.041(1.05) 0.035(0.90) 0.100(2.550) 0.089(2.250) 2 Emitter 0.004(0.10) max 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Collector-Base voltage VCBO 300 V Collector-Emitter voltage VCEO 300 V Emitter-Base voltage VEBO 5 V Collector current-Continuous IC 300 mA Collector current-peak ICM 500 mA Collector power dissipation PC 350 mW Parameter Thermal resistance, junction to ambient RΘJA 357 °C/W Junction temperature TJ 150 °C Storage temperature TSTG -55 to +150 °C Electrical Characteristics (Ta=25°C, unless otherwise specified) Parameter Conditions Symbol Min Max Unit Collector-base breakdown voltage IC=100μA, IE=0 V(BR)CBO 300 V Collector-emitter breakdown voltage IC=1mA, IB=0 V(BR)CEO 300 V Emitter-base breakdown voltage IE=100μA, IC=0 V(BR)EBO 5 V Collector cut-off current VCB=200V, IE=0 ICBO 0.25 μA Emitter cut-off current VEB=5V, IC=0 IEBO 0.1 μA VCE=10V, IC=1mA hFE(1) 60 VCE=10V, IC=10mA hFE(2) 100 VCE=10V, IC=30mA hFE(3) 60 Collector-emitter saturation voltage IC=20mA, IB=2mA VCE(sat) 0.2 V Base-emitter saturation voltage IC=20mA, IB=2mA VBE(sat) 0.9 V Transition frequency VCE=20V, IC=10mA f=30MHz fT DC current gain 50 Company reserves the right to improve product design , functions and reliability without notice. 200 MHz REV:A Page 1 QW-BTR38 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBTA42-G) — VCE 18 90uA 16 COLLECTOR CURRENT, I C (mA) Fig.2- hFE— IC 14 70uA 12 1000 COMMON -500uA EMITTER -450uA Ta=25°C 80uA 60uA 50uA 10 40uA 8 30uA 6 20uA 4 DC Current Gain, hFE Fig.1- IC Ta=100°C Ta= 25°C 100 IB=10uA 2 0 COMMON EMITTER VCE=10V 0 0 2 4 6 8 10 12 Collector-Emitter Voltage, 14 16 18 0.1 900 BASE-Emitter Saturation Voltage, ,VBEsat (mV) 500 Ta=100°C 100 Ta= 25°C 10 Ta=25°C 600 Ta= 100°C 300 0 1 0 100 10 1 100 10 Collector Current, Ic (mA) Collector Current , Ic (mA) Fig.5- IC — VBE Fig.6- FT — IC 100 Ta=2 5 1 COMMON EMITTER VCE=10V 0.1 0 300 600 1200 900 Transition frequency, fT (MHZ) 10 °C 0°C 300 Ta=1 0 Collector Current, Ic (mA) 100 10 Fig.4- VBEsat — IC Fig.3- VCEsat — IC Collector-Emtter Saturation Voltage ,VCEsat (mV) 1 Collector Current , Ic (mA) VCE (V) 100 COMMON EMITTER VCE=20V TA=25°C 10 0 Base - Emmiter Voltage , VBE (mV) 1 10 100 Collector current , IC (mA) REV:A Page 2 QW-BTR38 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBTA42-G) Fig. 7- Cob/Cib — VCB/VEB Capacitance, C ( pF) Cib Fig.8- PC — Ta f=1MHZ IE=0/IC=0 Ta=25°C 10 Cob 0 0.1 1 10 20 Collector Power Dissipation, Pc (mW) 100 400 300 200 100 0 0 Reverse Voltge , V ( V ) 25 50 75 100 125 150 Ambient Temperature , Ta (°C) REV:A Page 3 QW-JTR38 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P1 B F E d P0 SOT-23 SOT-23 SYMBOL A B C (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 (inch) 0.124 ± 0.004 0.109 ± 0.004 SYMBOL E F P (mm) 1.75 ± 0.10 3.50 ± 0.10 (inch) 0.069 ± 0.004 0.138 ± 0.004 d D D1 D2 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 P0 P1 W W1 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00 0.157 ± 0.004 0.157 ± 0.004 1.50 ± 0.10 0.048 ± 0.004 0.059 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039 REV:A Page 4 QW-JTR38 Comchip Technology CO., LTD. General Purpose Transistor Marking Code Part Number Marking Code MMBTA42-G 1D 3 1D 1 2 Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Case Type SOT-23 REV:A Page 5 QW-JTR38 Comchip Technology CO., LTD.