DF N1 01 0B -6 PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Low threshold voltage Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Exposed drain pad for excellent thermal conduction 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -8 - 8 V ID drain current - - 590 mA - 550 670 mΩ Per transistor VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 590 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 Simplified outline Graphic symbol source TR1 D1 1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 7 2 3 G1 5 8 D2 6 G2 4 S1 S2 017aaa256 6. Ordering information Table 3. Ordering information Type number Package PMDXB550UNE Name Description Version DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1216 7. Marking Table 4. Marking codes Type number Marking code PMDXB550UNE 01 10 00 MARKING CODE (EXAMPLE) READING DIRECTION MARK-FREE AREA PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 Fig. 1. aaa-007665 DFN1010B-6 (SOT1216) binary marking code description PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -8 8 V ID drain current Per transistor VGS = 4.5 V; Tamb = 25 °C [1] - 590 mA VGS = 4.5 V; Tamb = 100 °C [1] - 370 mA - 2.3 A [2] - 285 mW [1] - 410 mW Tsp = 25 °C - 4030 mW Tamb = 25 °C - 380 mA IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Source-drain diode IS source current Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C PMDXB550UNE Product data sheet [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 3. - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-017279 10 ID (A) tp = 10 µs Limit RDSon = VDS/ID 1 100 µs 1 ms 10-1 DC; Tsp = 25 °C 100 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-3 10-1 Fig. 4. 10 ms 1 10 102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 380 440 K/W [2] - 275 305 K/W Per transistor Rth(j-a) PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point [1] [2] Conditions Min Typ Max Unit - 27 31 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . aaa-015677 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.50 0.33 102 0.20 0.25 0.10 0.05 0 0.01 0.02 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-015678 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.50 0.33 0.25 0.20 0.10 0.05 0 0.01 10 10-3 0.02 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 4.5 V; ID = 590 mA; Tj = 25 °C - 550 670 mΩ VGS = 4.5 V; ID = 590 mA; Tj = 150 °C - 960 1170 mΩ VGS = 2.5 V; ID = 590 mA; Tj = 25 °C - 660 900 mΩ VGS = 1.8 V; ID = 80 mA; Tj = 25 °C - 770 1120 mΩ VGS = 1.5 V; ID = 10 mA; Tj = 25 °C - 890 1500 mΩ VDS = 10 V; ID = 590 mA; Tj = 25 °C - 600 - mS RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge VDS = 15 V; ID = 590 mA; VGS = 4.5 V; - 0.6 1.05 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 30.3 - pF Coss output capacitance Tj = 25 °C - 5.8 - pF Crss reverse transfer capacitance - 4.2 - pF td(on) turn-on delay time VDS = 15 V; ID = 590 mA; VGS = 4.5 V; - 4 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 7 - ns td(off) turn-off delay time - 12 - ns tf fall time - 3 - ns - 0.86 1.2 V Source-drain diode (per transistor) VSD source-drain voltage PMDXB550UNE Product data sheet IS = 380 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET aaa-017177 3 VGS = 4.5 V ID (A) ID (A) 3.0 V 2.5 V 2 aaa-017178 10-3 10-4 2.0 V 1.8 V (1) 10-5 1 (2) (3) 1.5 V 1.2 V 0 Fig. 7. 0 1 2 3 VDS (V) 10-6 4 0 0.5 1 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 8. aaa-017179 2.0 1.2 V RDSon (Ω) 1.8 V 1.5 V aaa-017180 RDSon (Ω) 3.0 V 1.5 1.5 1.0 1.0 Tj = 150 °C VGS = 4.5 V 0.5 0 1 2 ID (A) 0 3 Tj = 25 °C Fig. 9. Tj = 25 °C 0.5 0 Product data sheet 0 1 2 3 4 VGS (V) 5 ID = 1 A Drain-source on-state resistance as a function of drain current; typical values PMDXB550UNE 1.5 Sub-threshold drain current as a function of gate-source voltage 2.0 2.5 V 2.0 V VGS (V) Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET aaa-017181 1.0 aaa-017182 2.0 ID (A) a 0.8 1.5 0.6 0.4 0.5 0.2 0 1.0 Tj = 150 °C Tj = 25 °C 0 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 C (pF) 1.0 (1) (1) 10 (2) 0.5 0 -60 (2) (3) 0 60 (3) 120 Tj (°C) 1 10-1 180 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet 10 VDS (V) 102 (2) Coss (3) Crss Fig. 13. Gate-source threshold voltage as a function of junction temperature PMDXB550UNE 180 aaa-017184 102 VGS(th) (V) Tj (°C) Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-017183 1.5 0 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET aaa-017185 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 0.2 0.4 0.6 QG (nC) Fig. 16. Gate charge waveform definitions 0.8 ID = 0.6 A; VDS = 15 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-017186 2.0 IS (A) 1.5 1.0 Tj = 150 °C 0.5 Tj = 25 °C 0 0 0.4 0.8 1.2 VSD (V) 1.6 VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET 12. Package outline DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body: 1.1 x 1.0 x 0.37 mm pin 1 index area SOT1216 visible depend upon used manufacturing technology (6x) e e b (6x) 1 2 3 L (6x) E1 (2x) E D 6 A1 e1 A 0 A A1 b D D1 4 D1 (2x) e1 1 mm scale Dimensions (mm are the original dimensions) Unit 5 E E1 e e1 L min 0.34 0.15 1.05 0.32 0.95 0.22 0.125 nom 0.37 0.18 1.10 0.35 1.00 0.25 0.35 0.275 0.155 max 0.40 0.04 0.23 1.15 0.40 1.05 0.30 0.205 mm Note 1. Dimension A is including plating thickness. Outline version sot1216_po References IEC JEDEC JEITA European projection Issue date 13-03-05 13-03-06 SOT1216 Fig. 19. Package outline DFN1010B-6 (SOT1216) PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 (6x) 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 13-03-06 14-07-28 sot1216_fr Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216) PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMDXB550UNE v.1 20150325 Product data sheet - - PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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PMDXB550UNE Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 15 PMDXB550UNE NXP Semiconductors 30 V, dual N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 March 2015 PMDXB550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15